Patent application number | Description | Published |
20090061739 | POLISHING APPARATUS AND METHOD FOR POLISHING SEMICONDUCTOR WAFERS USING LOAD-UNLOAD STATIONS - A polishing apparatus and method for polishing semiconductor wafers uses multiple load-unload stations and at least one turn-over robotic wafer handing device to process the wafers so that the wafer can be polished at multiple polishing tables. The turn-over robotic wafer handing device operates to turn over the wafers so that one side of the wafers can be polished at a first polishing table and the other side of the wafers can then be polished at a second polishing table. | 03-05-2009 |
20090278161 | Method of fabricating vertical structure LEDs - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out. | 11-12-2009 |
20100009599 | APPARATUS AND METHOD FOR POLISHING SEMICONDUCTOR WAFERS USING ONE OR MORE POLISHING SURFACES - An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more polishing surfaces, multiple wafer carriers and at least one load-and-unload cup. The load-and-unload cup may be configured to move to and from the wafer carriers in a pivoting manner. The load-and-unload cup may be configured to move to and from the wafer carriers in a linear reciprocating manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a pivoting manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a linear reciprocating manner. | 01-14-2010 |
20100308368 | METHOD OF FABRICATING VERTICAL STRUCTURE LEDS - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out. | 12-09-2010 |
20110104997 | APPARATUSES AND METHODS FOR POLISHING AND CLEANING SEMICONDUCTOR WAFERS - Wafer processing apparatuses and methods for polishing and cleaning semiconductor wafers with high productivity, small footprint, easy maintenance and low defectivity are provided. The apparatuses comprise a polishing apparatus and a cleaning apparatus. The polishing apparatus comprises at least one polishing module. Each module comprises at least one polishing surface, at least one polishing head, at least one wafer transfer station and a transport mechanism to transfer the at least one polishing head between the at least one polishing surface and the at least one wafer transfer station. The polishing module may comprise a shield member and fluid injection devices to protect the at least one polishing surface from foreign particles. The cleaning apparatus can comprise two or more dry chambers for high productivity. The wafer processing apparatuses can comprise two cleaning apparatuses for high productivity. | 05-05-2011 |
20110193128 | METHOD OF FABRICATING VERTICAL STRUCTURE LEDS - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out. | 08-11-2011 |
20150048307 | VERTICAL STRUCTURE LEDS - A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface. | 02-19-2015 |
20150096495 | APPARATUS AND METHOD OF ATOMIC LAYER DEPOSITION - An apparatus for depositing atomic layers comprises a substrate moving mechanism, a showerhead comprising at least one injection unit, and a showerhead reciprocating mechanism. The showerhead injects source and reactant precursors to the substrate while the substrate is transported. The number of the atomic layers deposited on the substrate can be controlled by controlling the moving speed of the substrate and the reciprocating speed of the showerhead. The invention provides an apparatus and a method with high throughput and small footprint. The invention also provides an apparatus and a method configured to deposit the atomic layers on a gas permeable substrate. | 04-09-2015 |