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Imthurn
George Imthurn, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080230837 | RADIATION-HARDENED SILICON-ON-INSULATOR CMOS DEVICE, AND METHOD OF MAKING THE SAME - A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer. | 09-25-2008 |
George P. Imthurn, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110169550 | Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink - A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. | 07-14-2011 |
| 20110227637 | Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge - A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body. | 09-22-2011 |
James A. Imthurn, Hauser, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20100032455 | Control pin and spout system for heating metal casting distribution spout configurations - A control pin system, including an apparatus and method, for use in controlling the flow of molten metal in a molten metal distribution system for casting, with some aspects of the control pin including: a control pin body with an internal cavity and an outer surface, wherein the outer surface is sized and configured to operatively interact with an internal surface of a spout to effectively control the flow of molten metal through a spout aperture; and a heater element within the internal cavity of the control pin body. In other embodiments, the heater may be located within the spout body and transferring heat to the control pin. | 02-11-2010 |
Paul Daniel Imthurn, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110260894 | METHOD AND APPARATUS FOR ENTROPY DECODING - An entropy decoder and method for decoding code words with an indication of associated probability for each code word. The decoder may include an input buffer in communication with a branch node block, the branch node block in communication with a leaf node block. The input buffer operable to receive code words and the indication of associated probability. The branch node block comprising one or more branch node lookup tables and branch node control logic. The branch node control logic operable to process a code word in the input buffer using a selected table from the one or more branch node lookup tables to obtain leaf node information and a bit count of a code word size, the branch control logic further operable to refresh the input buffer to replace the bit count of the code word size and to make the leaf node information and the table selection available to the leaf node block. The leaf node block may include one or more leaf node lookup tables and leaf node control logic. The leaf node control logic operable to process the leaf node information and the table selection made available by the branch node block to obtain leaf node contents. | 10-27-2011 |
Paul Daniel Imthurn, Santa Cruz, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110260896 | APPARATUS FOR PARALLEL ENTROPY ENCODING AND DECODING - An entropy encoder block for use in a context adaptive encoder and an entropy decoder block for use in a context adaptive decoder are provided. | 10-27-2011 |