Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Imori
Hirokazu Imori, Maniwa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120095488 | LANCET PRICKING DEVICE - There is provided a lancet pricking device which is prevented from being re-used, and also the pricking pathway of the needle thereof is improved. The lancet pricking device comprising a lancet equipped with a pricking needle and a trigger for launching the pricking needle. The trigger comprises a first trigger part and a second trigger part disposed such as to cover the first trigger part. The lancet is in engagement with the first trigger part before the pricking needle is launched. When the second trigger part is pushed from the outside for the launching of the pricking needle, the displacement of the first trigger part is caused by the second trigger part, and thereby ceasing the engagement between the lancet and the first trigger part to launch the pricking needle. | 04-19-2012 |
Masatosi Imori, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110176334 | CARRIER WAVE AMPLITUDE CONTROL IN POWER SOURCE FOR STABILIZING DC VOLTAGE BY UTILIZING FREQUENCY DEPENDENCE OF RESONANCE - In the power supply composed of a driver circuit generating the carrier, a resonance circuit driven by the carrier and a rectification circuit generating the dc. voltage by rectifying the amplitude-modulated carrier supplied by the resonance circuit and stabilizing the output voltage by the feeding back the voltage error between the output voltage and a reference voltage externally supplied to set up the output voltage, to the frequency and the amplitude of the carrier, the frequency response of the dc. power supply is improved both by providing the pole located at the origin with a transfer function where the dc. voltage, generated by rectifying and smoothing the output of the resonance circuit, is fed back to the frequency of the carrier and by not providing the pole at the origin with a transfer function where the dc. voltage is fed back to the amplitude of the carrier. | 07-21-2011 |
Takahiro Imori, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090102860 | Image Creating Device, Image Creating Method, Information Recording Medium, and Program - In an image creating device ( | 04-23-2009 |
Takeshi Imori, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100206498 | METHOD OF DEINKING RECOVERED PAPER - The object of the present invention is to provide a process for producing deinked pulp from recovered paper containing stickies while preventing excessive reduction in the size of stickies, lowering the COD of effluents, and producing deinked pulp with a smaller residual ink content. | 08-19-2010 |
Toru Imori, Kitaibaraki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080224313 | Method for forming a seed layer for damascene copper wiring, and semiconductor wafer with damascene copper wiring formed using the method - A method for forming a seed layer for damascene copper wiring is provided. The method comprises the step of forming a seed layer, during damascene copper wiring formation, using an electroless plating solution comprising a water-soluble nitrogen-containing polymer and glyoxylic acid as a reducing agent, wherein the weight-average molecular weight (Mw) of the water-soluble nitrogen-containing polymer is 1,000 to less than 100,000. Preferably, the electroless plating solution further comprises phosphinic acid. | 09-18-2008 |
| 20090068364 | Method of surface treatment using imidazole compound - It is an object of the present invention to provide a novel imidazole alcohol compound that adheres strongly to metal surfaces in metal products, especially copper, aluminum and steel products, and that has a superior rust-preventive effect even in a thin film, and a surface-treating agent using the same. The novel imidazole alcohol compound is expressed by the following general formula (1) show a rust-preventive effect. | 03-12-2009 |
Yoshihisa Imori, Kawasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090098169 | MODIFIED CLAY MINERAL - Modified clay minerals obtained by treating a clay mineral with a particular acylarginine derivative are useful for stabilizing emulsion compositions, inter alia, W/O emulsion composition, while hardly causing skin irritation, and providing moisture retention properties. | 04-16-2009 |
Yoshihisa Imori, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080265443 | Semiconductor device and method of manufacturing the same - A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin. | 10-30-2008 |
| 20110073983 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate. | 03-31-2011 |