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| 20110267458 | FLUORESCENCE OBSERVATION DEVICE - A fluorescence observation apparatus according to the present invention includes a light source section that can emit a plurality of excitation light beams for exciting a plurality of fluorescent substances and a reference light, an image pickup section that picks up images of a plurality of fluorescent light beams emitted by emitting the plurality of excitation light beams to the plurality of fluorescent substances and reflected light of the reference light, an image generation section that generates an image signal corresponding to the plurality of fluorescent light beams and the reflected light of the reference light whose images are picked up by the image pickup section, a brightness detection section that detects brightness of a plurality of image signals corresponding to the plurality of fluorescent light beams and brightness of an image signal corresponding to the reflected light of the reference light, sets an upper limit value and a lower limit value of brightness using brightness of the image signal corresponding to the reflected light of the reference light as a reference and detects whether or not the brightness of the plurality of image signals corresponding to the plurality of fluorescent light beams falls within a range between the upper limit value and the lower limit value, and a brightness adjusting section that adjusts brightness of each image signal outside the range out of the plurality of image signals corresponding to the plurality of fluorescent light beams so as to fall within the range based on a detection result by the brightness detection section. | 11-03-2011 |
| 20110267493 | FLUORESCENCE OBSERVATION APPARATUS - A fluorescence observation apparatus of the present invention includes a light source section that can emit a plurality of excitation light beams for exciting a plurality of fluorescent substances and a reference light, an image pickup section that picks up images of a plurality of fluorescent light beams emitted by emitting the plurality of excitation light beams to the plurality of fluorescent substances and reflected light of the reference light, an image generation section that generates image signals corresponding to the plurality of fluorescent light beams and the reflected light of the reference light whose images have been picked up by the image pickup section, and an image processing section that assigns a plurality of fluorescent light images related to image signals corresponding to the plurality of fluorescent light beams and a reference light image related to an image signal corresponding to the reflected light of the reference light to a plurality of color channels respectively and outputs the resulting image as a synthesized image, wherein the image generation section generates an image signal in which the one fluorescent light image and the synthesized image are arranged side by side on a same screen, and the image processing section calculates, when a color tone operation is performed on any one of the plurality of image signals generated by the image generation section, a color tone adjustment coefficient for achieving color tone balance with image signals other than the image signal subjected to the color tone operation and performs color tone calculation processing on the image signals to be assigned to the plurality of color channels using the calculated color tone adjustment coefficient. | 11-03-2011 |
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| 20100082699 | INFORMATION PROCESSING APPARATUS AND ITS CONTROL METHOD AND DATA PROCESSING SYSTEM - In order to provide a technology which allows efficient understanding of images of a disease locus and diagnosis supporting information for the images, an information processing apparatus comprises: an input unit which inputs object identification information for identifying an object; an acquiring unit which acquires one or more schemas related to the object and medical image data related to the schema, an identification unit which identifies a disease locus region in medical image data respectively related to each of the one or more schemas, a time-series schema generating unit which generates a time-series schema of the disease locus, a time-series image data generating unit which generates time-series image data of the disease locus, and a display output unit which synchronizes and outputs the time-series schema of the disease locus and the time-series image data of the disease locus. | 04-01-2010 |
| 20110170753 | INFORMATION PROCESSING APPARATUS AND ITS CONTROL METHOD AND DATA PROCESSING SYSTEM - In order to provide a technology which allows efficient understanding of images of a disease locus and diagnosis supporting information for the images, an information processing apparatus comprises: an input unit which inputs object identification information for identifying an object; an acquiring unit which acquires one or more schemas related to the object and medical image data related to the schema, an identification unit which identifies a disease locus region in medical image data respectively related to each of the one or more schemas, a time-series schema generating unit which generates a time-series schema of the disease locus, a time-series image data generating unit which generates time-series image data of the disease locus, and a display output unit which synchronizes and outputs the time-series schema of the disease locus and the time-series image data of the disease locus. | 07-14-2011 |
| 20110199390 | MEDICAL DIAGNOSIS SUPPORT APPARATUS, METHOD OF CONTROLLING MEDICAL DIAGNOSIS SUPPORT APPARATUS, AND PROGRAM - A medical diagnosis support apparatus includes an item display unit which displays, on a display, a plurality of items for which a parameter for deriving diagnosis support information can be input, a temporary input unit which inputs a plurality of different values as temporary input values for the plurality of items displayed by the item display unit, a deriving unit which derives, by referring to medical information, a plurality of pieces of diagnosis support information each corresponding to one of combinations of the plurality of different temporary input values, and a presenting unit which presents, on the display, the plurality of pieces of diagnosis support information derived by the deriving unit, together with the display of the plurality of items, in a list format. | 08-18-2011 |
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| 20090020766 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer. | 01-22-2009 |
| 20090173997 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer | 07-09-2009 |
| 20090250705 | SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME - A p base ohmic contact of a silicon carbide semiconductor device consists of a p++ layer formed by high-concentration ion implantation and a metal electrode. Since the high-concentration ion implantation performed at the room temperature significantly degrades the crystal of the p++ layer to cause a process failure, a method for implantation at high temperatures is used. In terms of switching loss and the like of devices, it is desirable that the resistivity of the p base ohmic contact should be lower. In well-known techniques, nothing is mentioned on a detailed relation among the ion implantation temperature, the ohmic contact resistivity and the process failure. Then, in the ion implantation step, the temperature of a silicon carbide wafer is maintained in a range from 175° C. to 300° C., more preferably in a range from 175° C. to 200° C. The resistivity of the p base ohmic contact using a p++ region formed by ion implantation at a temperature in a range from 175° C. to 300° C. becomes lower than that in a case where the p++ region is formed by ion implantation at a temperature over 300° C. Further, this can avoid any process failure. | 10-08-2009 |
| 20090261348 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device using a SiC substrate, a Junction Termination Edge (JTE) layer is hardly affected by fixed charge so that a stable dielectric strength is obtained. A semiconductor device according to a first aspect of the present invention includes a SiC epi-layer having n type conductivity, an impurity region in a surface of the SiC epi-layer and having p type conductivity, and JTE layers adjacent to the impurity region, having p type conductivity, and having a lower impurity concentration than the impurity region. The JTE layers are spaced by a distance from an upper surface of the SiC epi-layer, and SiC regions having n type conductivity are present on the JTE layers. | 10-22-2009 |
| 20100219417 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The semiconductor device includes a substrate, a first drift layer, a second drift layer, a first well region, a second well region, a current control region, and a field relieving region. The first well region is disposed continuously from an end portion adjacent to the vicinity of outer peripheral portion of the second drift layer to a portion of the first drift layer below the vicinity of outer peripheral portion. The field relieving region is so disposed in the first drift layer as to be adjacent to the first well region. | 09-02-2010 |
| 20100314629 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer. | 12-16-2010 |
| 20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
