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Ik-Soo Kim
Ik-Soo Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110104654 | PERSONAL LEARNING APPARATUS AND METHOD BASED ON WIRELESS COMMUNICATION NETWORK - A personal learning apparatus and method using a terminal which supports an electronic book function in a wireless communication network are provided. The personal learning method includes: distributing, by a master device, learning data to the terminal within a wireless communication service area; collecting, by the master device, learning results based on the learning data from the terminal provided with the learning data; and storing, by the master device, the collected learning results. | 05-05-2011 |
| 20110106970 | APPARATUS AND METHOD FOR SYNCHRONIZING E-BOOK CONTENT WITH VIDEO CONTENT AND SYSTEM THEREOF - A method of synchronizing a first device capable of displaying video content and including the video content, and a second device capable of displaying E-book content associated with the video content and including the E-book content. The first device is connected to the second device according to a specific protocol. In response to a specific event for the video content or the E-book content occurring in one of the first and second devices, the device in which the specific event occurs generates event information about the specific event and transmits it to the other of the first and second devices, and performs the specific event according to the event information. Upon receiving the event information, the other of the first and second devices performs the specific event according to the received event information in synchronization with the device in which the specific event occurred, using synchronization information between the video content and the E-book content. | 05-05-2011 |
Ik-Soo Kim, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090061538 | Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the same - In a method of forming a ferroelectric capacitor, a lower electrode layer is formed on a substrate. A first crystalline layer is formed on the lower electrode layer. A ferroelectric layer is formed on the first crystalline layer. The first crystalline layer one of prevents a component of the ferroelectric layer from diffusing into the lower electrode layer and mitigates fatigue of the ferroelectric layer. An upper electrode layer is formed on the ferroelectric layer. | 03-05-2009 |
| 20100181605 | DATA STORAGE DEVICE HAVING SELF-POWERED SEMICONDUCTOR DEVICE - Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes. | 07-22-2010 |
| 20110032752 | Multi-Level Memory Device Using Resistance Material - A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC. | 02-10-2011 |
| 20110032753 | MEMORY CELLS INCLUDING RESISTANCE VARIABLE MATERIAL PATTERNS OF DIFFERENT COMPOSITIONS - A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns. | 02-10-2011 |
Ik-Soo Kim, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090035877 | METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME - A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains. | 02-05-2009 |
| 20090233421 | Methods of Fabricating Semiconductor Device Including Phase Change Layer - Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer. | 09-17-2009 |