Patent application number | Description | Published |
20100102377 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a plurality of charge storage layers formed on the first insulating layer, a plurality of element isolation insulating films formed between the charge storage layers respectively, a second insulating layer formed on the charge storage layers and the element isolation insulating films, the second insulating layer including a stacked structure of a first silicon nitride film, a first silicon oxide film, an intermediate insulating film having a relative dielectric constant of not less than 7 and a second silicon oxide film, and a control electrode formed on the second insulating layer. The first silicon nitride film has a nitrogen concentration of not less than 21×10 | 04-29-2010 |
20110133267 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a charge accumulation layer, an intermediate insulating film and a conductive layer sequentially on the gate insulating film, forming an electrode isolating trench in the conductive layer, the intermediate insulating film and the charge accumulation layer, forming a nitride film on upper and side surfaces of the conductive layer, side surfaces of the intermediate insulating film, side surfaces of the charge accumulation layer and an upper surface of the gate insulating film, removing the nitride film formed on the upper surface of the gate insulating film, and filling the electrode isolating trench with an insulating film. | 06-09-2011 |
20110312155 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a first silicon nitride film, first silicon oxide film, intermediate insulating film and second silicon oxide film. The first silicon nitride film has a nitrogen concentration of not less than 21×10 | 12-22-2011 |
20120126299 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region. | 05-24-2012 |
20130069135 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region. | 03-21-2013 |
20130069142 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region. | 03-21-2013 |
Patent application number | Description | Published |
20080259472 | LENS ALIGNMENT APPARATUS - A lens alignment apparatus includes a main lens holding frame having a main lens secured thereto; an adjusting lens holding frame to which an adjusting lens to be aligned with the main lens is secured; at least one radial groove formed in one of adjacent end surfaces of the main lens holding frame and the adjusting lens holding frame; a centering hole, corresponding to the radial groove, formed in the other of the adjacent end surfaces of the main lens holding frame and the adjusting lens holding frame; and an alignment member including a centering pillar portion inserted in the centering hole and an aligning portion engaged in the radial groove, the aligning portion being provided with a plurality of pairs of parallel alignment surfaces having an identical width and different distances from the axis of the centering pillar portion. | 10-23-2008 |
20100214679 | WATER-RESISTANT STRUCTURE OF A LENS BARREL - A water-resistant structure of a lens barrel includes a sealing member that seals an annular gap between inner and outer annular members, wherein the sealing member is positioned in a vicinity of an open end of the outer annular member and is fixed to one of the inner and outer annular members to be slidable on the other of the inner and outer annular members, and a drain groove formed on the inner annular member and positioned alongside the sealing member at a position closer to the open end of the outer annular member than the sealing member. Furthermore, a frictional resistance of a first sealing member produced between a secondary annular member and a manually-rotatable annular members is greater than a frictional resistance of the second sealing member that urges one of two of the manually-rotatable annular members to follow a rotation of the other thereof when rotated. | 08-26-2010 |
20120075720 | VARIFOCAL LENS BARREL - A varifocal lens barrel includes a plurality of lens groups, each of which are linearly movable in the optical axis direction thereof without rotating about the optical axis during a zooming operation and during a focusing operation, including a base barrel which is linearly movable in the optical axis direction by rotation of a zoom operational ring, wherein lens frames of the respective lens groups are each supported by the base barrel. | 03-29-2012 |
20120075731 | GEAR MECHANISM - A gear mechanism having a smaller diameter and achieving an accurate automatic drive includes a central gear supported on a rotational shaft, first and second side gears coaxially positioned on both sides of the central gear, planetary bevel gears supported within side surfaces of the central gear, and sun bevel gears respectively formed on the inner side surfaces of the first and second side gears which are engaged with the planetary bevel gears. At least one of the first and second side gears is provided with a torque adjuster for adjusting the torque of the side gear(s). | 03-29-2012 |
Patent application number | Description | Published |
20140111686 | CAMERA BODY, LENS BARREL AND LENS-INTERCHANGEABLE CAMERA - A camera body includes a body-side bayonet lug, wherein a lens-side bayonet lug of a lens barrel is positioned immediately behind the body-side bayonet lug when the lens barrel is mounted to the camera body; an opposed surface formed on the rear surface of the body-side bayonet and positioned immediately in front of the lens-side bayonet lug; a body-side mount surface positioned in front of the opposed surface and with which the lens-side bayonet surface comes into contact; and a body-side contact portion, the front end of which contacts the rear end of the lens-side contact portion when the opposed surface faces the lens-side bayonet lug, the front end of the body-side contact portion being positioned in front of the opposed surface and behind the body-side mount surface. | 04-24-2014 |
20140119720 | CAMERA BODY - A camera body includes body-side bayonet lugs concentric with lens-side bayonet lugs, circular-arc openings, a circular arc protrusion positioned inside the camera body and projecting forward and concentric with the body-side bayonet lugs, body-side contact portions provided and arranged on the front end surface of the circular arc protrusion and come into contact with lens-side contact portions which are provided on the lens barrel, and rearward biasers provided immediately behind two of the body-side bayonet lugs to bias and move the lens-side bayonet lugs rearward, wherein two of the body-side contact portions located at both ends in the lengthwise direction and the two rearward biasers lie on radial-direction extension lines of the circular arc protrusion, respectively, as viewed in an optical axis direction. | 05-01-2014 |
20140119721 | CAMERA BODY, LENS BARREL AND LENS-INTERCHANGEABLE CAMERA - A camera body includes a plurality of body-side bayonet lugs which are provided on the peripheral edge of an opening; and a protrusion which is positioned in a circular-arc opening formed between adjacent body-side bayonet lugs of the body-side bayonet lugs, the distance between the protrusion and either of adjacent two body-side bayonet lugs of the body-side bayonet lugs being shorter than each of the lens-side bayonet lugs; and a body-side mount surface with which the lens-side bayonet surface comes into contact from the front side when the lens-side bayonet lugs are positioned immediately behind the body-side bayonet lugs. | 05-01-2014 |