Patent application number | Description | Published |
20080204323 | Antenna Device - An antenna device includes a grounding board having an edge, and an antenna provided on the grounding board. The antenna includes a dielectric block having a top surface, a bottom surface, and a side surface, a radiator electrode provided on the top surface, a short-circuit electrode provided on the side surface. The radiator electrode includes a short-circuited end connected to the second end of the short-circuit electrode, and a portion extending from the short-circuited end and along the outer periphery of the top surface of the dielectric block. The portion of the radiator electrode has an open end located at the first side of the dielectric block. The side surface of the dielectric block is substantially flush with the edge of the grounding board. This antenna device improves radiation characteristics of the chip antenna and allowing a communication device to have a small size. | 08-28-2008 |
20090040109 | Antenna Device and Wireless Communication Device Using the Same - An antenna device including a first Planar Inverted F Antenna (PIFA) operating at a first frequency and a second PIFA operating at a second frequency that is higher than the first frequency and disposed in a state in which it is insulated from the first PIFA. The antenna device has an antenna element in which a first short-circuit lead wire and a second short-circuit lead wire are coupled to a ground terminal provided on a substrate, a first feeding lead wire is coupled to a feeding terminal provided on a substrate via first matching circuit and a second feeding lead wire is coupled to a feeding terminal provided on the substrate via a second matching circuit. Thus, an antenna device which has a high degree of freedom for adjusting characteristics corresponding to a plurality of frequency bands can be realized. | 02-12-2009 |
20090140947 | Antenna Device and Radio-Communication System Using the Same - An antenna device comprising: a substrate; a ground conductor provided on the bottom surface of the substrate; a radiation conductor, with a partial cutout, provided on the top surface of the substrate; a ground terminal provided on the partial cutout of the radiation conductor; a conductor connecting the ground conductor with the ground terminal; and a feed terminal connected to the radiation conductor, wherein the ground terminal and the feed terminal are connected via an IC chip is provided. The configuration can realize an antenna device capable of feeding electric power through the IC chip, and of operating even on a metal plate fully well. A radio communication system using the antenna device is provided additionally. | 06-04-2009 |
20090278748 | ANTENNA DEVICE AND ELECTRONIC DEVICE USING SAME - The antenna device comprises a ground substrate serving as ground, a feeder portion formed on the ground substrate, a first conductor connected to the feeder portion, and a second conductor being substantially equal to the first conductor in conductor length, which is connected to the ground substrate and disposed substantially parallel to the first conductor with a space therebetween. And, the first conductor and the second conductor are electrically connected to each other between each tip and a portion substantially at least ⅓ in conductor length of each conductor from each tip. | 11-12-2009 |
Patent application number | Description | Published |
20090101399 | Suspension board with circuit - A suspension board with circuit includes a slider mounting portion provided with three pedestals arranged in mutually spaced apart relation for supporting a slider on which a magnetic head is mounted. | 04-23-2009 |
20090116150 | Suspension board with circuit - A suspension board with circuit includes a metal supporting board, an insulating layer formed on the metal supporting board, a conductive layer formed on the insulating layer, and a pedestal for supporting a slider. The pedestal includes a lower pedestal made of the insulating layer, and formed in a continuous frame shape so as to surround a bonding surface of the metal supporting board to the slider, and an upper pedestal made of the conductive layer, and formed in a discontinuous frame shape on the lower pedestal. | 05-07-2009 |
20110048785 | Wired circuit board and producing method thereof - A wired circuit board includes a metal supporting layer, an insulating layer formed on the metal supporting layer, and a conductive layer formed on the insulating layer. In the metal supporting layer, a reference hole for positioning is formed, and a stepped portion is formed so as to surround the reference hole. | 03-03-2011 |
Patent application number | Description | Published |
20090001412 | PHOTODETECTOR AND PRODUCTION METHOD THEREOF - The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate | 01-01-2009 |
20090057721 | SEMICONDUCTOR DEVICE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME - A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer | 03-05-2009 |
20090321785 | LIGHT RECEIVING DEVICE - A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacking a larger layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, larger lattice constant than that of InP and thickness between hc and 11hc, the critical thickness hc being determined as hc=b(1−ν cos | 12-31-2009 |
20100327386 | PHOTODIODE ARRAY, IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD - A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit. | 12-30-2010 |
20110031577 | Photodiode Array - A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer | 02-10-2011 |
20110140082 | LIGHT-RECEIVING ELEMENT AND LIGHT-RECEIVING ELEMENT ARRAY - Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. | 06-16-2011 |
20110164136 | IMAGE PICKUP DEVICE, VISIBILITY SUPPORT APPARATUS, NIGHT VISION DEVICE, NAVIGATION SUPPORT APPARATUS, AND MONITORING DEVICE - An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer | 07-07-2011 |
20110168895 | FOOD QUALITY EXAMINATION DEVICE, FOOD COMPONENT EXAMINATION DEVICE, FOREIGN MATTER COMPONENT EXAMINATION DEVICE, TASTE EXAMINATION DEVICE, AND CHANGED STATE EXAMINATION DEVICE - There is provided, for example, a food quality examination device configured to inspect the quality of food with high sensitivity using an InP-based photodiode in which a dark current is decreased without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer has a multiquantum well structure composed of a III-V group semiconductor. A pn junction is formed by selectively diffusing an impurity element into the absorption layer. The concentration of the impurity in the absorption layer is 5×10 | 07-14-2011 |
20120032147 | BIOLOGICAL COMPONENT DETECTION DEVICE - Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer | 02-09-2012 |
20120223290 | LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY - A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×10 | 09-06-2012 |
20120274771 | IMAGE PICKUP DEVICE, VISIBILITY SUPPORT APPARATUS, NIGHT VISION DEVICE, NAVIGATION SUPPORT APPARATUS, AND MONITORING DEVICE - An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer | 11-01-2012 |