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| 20100185831 | SEMICONDUCTOR INTEGRATED CIRCUIT AND ADDRESS TRANSLATION METHOD - A semiconductor integrated circuit incorporating an address translation section has a micro TLB, a main TLB and a CPU. The CPU reads out, at the time of process switching, a TLB entry having a private mapping of a pre-switching process from the micro TLB, stores the read TLB entry in a corresponding TLB entry storage area in a TLB context storage section having a plurality of TLB context storage areas in each of which a TLB entry having a private mapping of each of a plurality of processes is stored as a context of a TLB, reads out a TLB entry having a private mapping of a post-switching process from the TLB context storage section, and writes the read TLB entry into the main TLB. | 07-22-2010 |
| 20110029930 | DISTRIBUTED PROCESSING DEVICE AND DISTRIBUTED PROCESSING METHOD - A distributed processing device includes a GUI generating section configured to generate a job execution folder in which a program file of a program used for distributed processing and a processor file corresponding to a computational resource for executing the distributed processing are to be put and to display the job execution folder on a display device, and a file processing section configured to give an instruction for an execution of the distributed processing if the program file and the processor file which are required for executing the distributed processing are put in the job execution folder. | 02-03-2011 |
| 20110066836 | OPERATING SYSTEM BOOTING METHOD, COMPUTER, AND COMPUTER PROGRAM PRODUCT - According to one embodiment, a CPU boots a small OS having a function of executing a target application, boots the target application on the booted small OS, and boots a CPU dispatcher for switching an execution OS. The CPU boots a rich OS capable of executing applications larger in number than applications executed by the small OS by using the CPU dispatcher, in a background of the small OS, while causing the target application booted on the small OS to run. After the rich OS is booted, the CPU boots the target application on the booted OS separately from the target application running on the small OS. The CPU passes an execution state of the target application running on the small OS to the target application booted on the rich OS and shifting the execution OS from the small OS to the rich OS. | 03-17-2011 |
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| 20090305496 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided. | 12-10-2009 |
| 20100001380 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes: forming a groove portion in a dicing region of an insulating layer and forming a via hole in an internal circuit formation region; providing a first resist film on the insulating layer; providing a second resist film to cover the first resist film; forming an interconnect opening in a region covering an internal circuit formation region of the second resist film and forming a position aligning opening in a region covering the dicing region of the second resist film; and detecting a positional relationship between the groove portion and the position aligning opening so as to detect whether the interconnect opening of the second resist film exists at a predetermined position with respect to the via hole of the insulating layer. In selective removing of the second resist film, the position aligning opening is formed such that a region of the position aligning opening covers the groove portion of the insulating layer. | 01-07-2010 |
| 20100176483 | FUSE ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THE SAME - A fuse element according to the present invention and a semiconductor integrated circuit with the fuse element include interconnects and a via connected to a region for connecting the interconnects. A first angle between a first side surface of the via and the connect region is smaller than a second angle between a second side surface opposite the first side surface and the connect region. | 07-15-2010 |
| 20100327447 | Method of manufacturing semiconductor device and semiconductor device - A method of manufacturing a semiconductor device includes forming a barrier metal film including a high melting point metal in a concave portion formed in an insulating film formed over a substrate; forming a seed alloy film including copper and an impurity metal different from the copper over the barrier metal film so as to fill a portion of the concave portion; forming a plated metal film containing copper as a major ingredient over the seed alloy film so as to fill the concave portion; first heat-treating the seed alloy film and the plated metal film at 200° C. or higher and for ten minutes or less; removing the plated metal film, the seed alloy film, and the barrier metal film which are exposed to the outside of the concave portion, after the first heat-treating; and second heat-treating the seed alloy film and the plated metal film. | 12-30-2010 |
| 20110230051 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided. | 09-22-2011 |
| 20120015517 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film. | 01-19-2012 |
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| 20090010674 | IMAGE FORMING DEVICE - An image forming device including: an image holding member; a charging member; a latent image-forming unit; a developing unit that develops the electrostatic latent image formed on the image holding member with a developer including a toner and a carrier, the toner comprising an external additive having first inorganic particles with a volume average particle diameter of 80 nm to 300 nm, and the carrier including a core material having a magnetic powder dispersed in a resin and a resin covering layer that covers the core material; a transfer unit; a removal unit; and an aggregation-forming unit that, by contacting a surface of the charging member and rotating in accordance with rotation of the charging member, removes adherents on the surface of the charging member, including the first inorganic particles, from the surface of the charging member, and forms aggregations in which the removed first inorganic particles are aggregated. | 01-08-2009 |
| 20100248109 | CARRIER FOR REPLENISHMENT, DEVELOPER FOR REPLENISHMENT, DEVELOPER CARTRIDGE FOR REPLENISHMENT, AND IMAGE FORMING APPARATUS - The present invention provides a carrier for replenishment including an associated particle in which single particles each having a core material and a resin layer covering the core material, are bound via the resin layer, the carrier being used in a developer for replenishment of a trickle development system, and the system including performing development while the developer for replenishment is replenished, upon development of a latent image on a latent image holding member using a development unit. | 09-30-2010 |
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| 20090101541 | LIGHT OIL COMPOSITIONS - The invention provides a gas oil composition having a C10-24 paraffin composition that satisfies the condition represented by inequality (1-1) below, a slow-cooling cloud point of no higher than −6.0° C. and a pour point of no higher than −7.5° C. The invention further provides a gas oil composition having a C10-24 paraffin composition that satisfies the condition represented by inequality (1-2) below, a distillate volume at a distillation temperature of 250° C. (E250) of 5-45% and a slow-cooling cloud point of higher than −6.0° C. In inequalities (1-1) and (1-2), n is the carbon number of the paraffin and f(n) is the paraffin composition parameter for the carbon number of n represented by formula (2) below. In formula (2), n represents an integer of 10-24, and a, b and c respectively represent the proportion (in terms of molar value) of normal paraffins with carbon number of n, of isoparaffins with carbon number of n and one branch and of isoparaffins with carbon number of n and two or more branches, with respect to the total amount of paraffins with carbon number of n. | 04-23-2009 |
| 20090165362 | Light Oil Composition - The invention provides a gas oil composition wherein the molar ratio of isoparaffins with carbon number of m and two or more branches to isoparaffins with carbon number of m and one branch within the range of C10-21 is 0.05-3.5, wherein m is an integer of 10-21, and the molar ratio of isoparaffins with carbon number of n and two or more branches to isoparaffins with carbon number of n and one branch within the range of C22-25 is 0.1-10.0, wherein n is an integer of 22-25. The invention also provides a gas oil composition wherein the molar ratio of isoparaffins with carbon number of m and two or more branches to isoparaffins with carbon number of m and one branch within the range of C10-23 is 0.05-4.0, wherein m is an integer of 10-23, and the distillate volume at a distillation temperature of 250° C. (E250) is 15-65%. | 07-02-2009 |
| 20110218376 | PROCESS FOR PRODUCING HYDROCARBON OIL - The method for manufacturing a hydrocarbon oil of the present invention comprises a first step wherein a plurality of reaction zones filled with a specific catalyst is disposed in series and a feedstock oil containing an oxygen-containing hydrocarbon compound derived from an animal or vegetable oil is supplied and hydrotreated under the conditions of a hydrogen pressure of 1 MPa or more and 10 MPa or less in each of the reaction zones; and a second step wherein hydrogen, hydrogen sulfide, carbon dioxide and water are removed from a product to be treated obtained in the first step to obtain a hydrocarbon oil. Among the plurality of reaction zones, the inlet temperature of the reaction zone disposed on the most upstream side is 150° C. or more and 250° C. or less, the inlet temperature of the second most upstream reaction zone or below is equal to or higher than the condensation temperature of water, and the outlet temperature of the reaction zone disposed on the most downstream side is 260° C. or more and 360° C. or less. The feedstock oil comprises a recycled oil containing a specific amount of a part of the hydrocarbon oil obtained in the second step and a specific amount of a sulfur-containing hydrocarbon compound. | 09-08-2011 |
| 20110237853 | PROCESS FOR PRODUCING HYDROCARBON OIL - A method for manufacturing a hydrocarbon oil, comprising: a first step wherein a feedstock oil containing an oxygen-containing organic compound and a water-insoluble chlorine-containing compound is brought into contact with a hydrogenation catalyst comprising a support containing a porous inorganic oxide and one or more metals selected from Group VIA and Group VIII of the periodic table supported on the support in the presence of hydrogen to generate a hydrocarbon oil and water in a vapor state by the hydrodeoxygenation of an oxygen-containing organic compound and convert the water-insoluble chlorine-containing compound into a water-soluble chlorine-containing compound; a second step wherein the water in the reaction product of the first step is maintained in a vapor state and the reaction product of the first step is brought into contact with a nitrogen-containing Brønsted base compound which has a boiling point at normal pressure of 100° C. or less and is water-soluble to obtain a product to be treated; and a third step wherein the product to be treated is cooled to a temperature not higher than the temperature at which water in a vapor state is liquefied to form an aqueous phase containing a water-soluble chlorine-containing compound and a nitrogen-containing Brønsted base compound and then separate the aqueous phase from an oil to be treated to obtain a product oil containing a hydrocarbon oil. | 09-29-2011 |
