Patent application number | Description | Published |
20080258184 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making - Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described. | 10-23-2008 |
20100212730 | PHOTOVOLTAIC DEVICES INCLUDING BACK METAL CONTACTS - A photovoltaic cell can include a substrate having a transparent conductive oxide layer, a CdS/CdTe layer, and a back metal contact. The back metal contact can be deposited by sputtering or by chemical vapor deposition. | 08-26-2010 |
20100295102 | NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING - Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described. | 11-25-2010 |
20110139240 | PHOTOVOLTAIC WINDOW LAYER - A discontinuous or reduced thickness window layer can improve the efficiency of CdTe-based or other kinds of solar cells. | 06-16-2011 |
20110291112 | NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING - Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described. | 12-01-2011 |
20120025100 | PHOTOLUMINESCENCE MEASUREMENT - A photoluminescence measurement system can include an optical source. | 02-02-2012 |
20120305994 | SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING - Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide. | 12-06-2012 |
20120309154 | VERTICAL JUNCTION FIELD EFFECT TRANSISTOR WITH MESA TERMINATION AND METHOD OF MAKING THE SAME - A vertical junction field effect transistor (VJFET) having a mesa termination and a method of making the device are described. The device includes: an n-type mesa on an n-type substrate; a plurality of raised n-type regions on the mesa comprising an upper n-type layer on a lower n-type layer; p-type regions between and adjacent the raised n-type regions and along a lower sidewall portion of the raised regions; dielectric material on the sidewalls of the raised regions, on the p-type regions and on the sidewalls of the mesa; and electrical contacts to the substrate (drain), p-type regions (gate) and the upper n-type layer (source). The device can be made in a wide-bandgap semiconductor material such as SiC. The method includes selectively etching through an n-type layer using a mask to form the raised regions and implanting p-type dopants into exposed surfaces of an underlying n-type layer using the mask. | 12-06-2012 |
20130098433 | PHOTOVOLTAIC DEVICE AND METHOD OF FORMATION - An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer. | 04-25-2013 |
20140261667 | PHOTOVOLTAIC DEVICE HAVING IMPROVED BACK ELECTRODE AND METHOD OF FORMATION - A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoN | 09-18-2014 |
20140261685 | THIN FILM PHOTOVOLTAIC DEVICE WTIH LARGE GRAIN STRUCTURE AND METHODS OF FORMATION - Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS | 09-18-2014 |