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Igor Blednov, Nijmegen NL

Igor Blednov, Nijmegen NL

Patent application numberDescriptionPublished
20080246547Method And System for Output Matching of Rf Transistors - A high frequency power device (10-09-2008
20090174482HIGH POWER INTEGRATED RF AMPLIFIER - An integrated HF-amplifÊer structure comprises in a first direction (FD) in the order mentioned: an input bond pad (IBP), a plurality of cells (CE07-09-2009
20090179702DOHERTY AMPLIFIER - An integrated Doherty amplifier structure comprises an input bond pad (IBP), and an output bond pad (OBP). A first transistor (T07-16-2009
20090212858Integrated Doherty type amplifier arrangement with high power efficiency - The present invention relates to an integrated Doherty type amplifier arrangement and an amplifying method for such an arrangement, wherein a lumped element hybrid power divider (08-27-2009
20100001802INTEGRATED DOHERTY TYPE AMPLIFIER ARRANGEMENT WITH HIGH POWER EFFICIENCY - The present invention relates to an integrated Doherty type amplifier arrangement and an amplifying method for such an arrangement, wherein a lumped element hybrid power divider (01-07-2010
20100026387INTEGRATED DOHERTY TYPE AMPLIFIER ARRANGEMENT WITH HIGH POWER EFFICIENCY - The present invention shows a Doherty type of amplifier arrangement comprising a plurality of parallel unit cells. Each unit cell is of relatively low power. Suitably it comprises a compensation circuit at the input of the main amplifier and peak amplifier stage.02-04-2010
20100164632POWER AMPLIFIER - A radio frequency power amplifier has first and second amplifier stages coupled in series, one of which is operated in class F and the other is operated in inverse class F; an envelope detector adapted to detect an envelope of the input signal; a power supply coupled to supply an electrical supply voltage to the first and second amplifier stages, wherein the electrical supply voltage is controlled to follow the envelope of the input signal. Such amplifier makes it possible to maintain class F and inverse class F operation, respectively, of the first and second amplifier stages independent on the input signal. Preferably, this is done by controlling the electrical supply voltage so that the saturation levels of the first and second amplifier stages follow the envelope of the input signal.07-01-2010
20100188147MULTI-WAY DOHERTY AMPLIFIER - An electronic circuit has a multi-way Doherty amplifier. The multi-way Doherty amplifier comprises a two-way Doherty amplifier with a main stage and a first peak stage that are integrated in a semiconductor device; and at least one further peak stage implemented with a discrete power transistor.07-29-2010
20100188164POWER DEVICE AND A METHOD FOR CONTROLLING A POWER DEVICE - An RF power device that includes a transistor with a compact impedance transformation circuit, where the transformation circuit includes a lumped element CLC analogue transmission line and an associated embedded directional bilateral RF power sensor that is inductively coupled to the transmission line to provide detection of direct and reflected power independently with high directivity.07-29-2010
20110140783DOHERTY AMPLIFIER WITH COMPOSED TRANSFER CHARACTERISTIC HAVING MULTIPLE PEAK AMPLIFIERS - A combination amplifier (06-16-2011
20110140786DOHERTY AMPLIFIER - A combination amplifier, in particular a Doherty amplifier allowing dynamic biasing, is provided, the combination amplifier comprising a first amplifier (06-16-2011

Patent applications by Igor Blednov, Nijmegen NL