| Patent application number | Description | Published |
|---|
| 20080212350 | CAM Asynchronous Search-Line Switching - This patent describes a method for switching search-lines in a Content Addressable Memory (CAM) asynchronously to improve CAM speed and reduce CAM noise without affecting its power performance. This is accomplished by resetting the match-lines prior to initiating a search and then applying a search word to the search-lines. A reference match-line is provided to generate the timing for the search operation and provide the timing for the asynchronous application of the search data on the SLs. Additional noise reduction is achieved through the staggering of the search data application on the SLs through programmable delay elements | 09-04-2008 |
| 20080219069 | DEVICE THRESHOLD CALIBRATION THROUGH STATE DEPENDENT BURNIN - Disclosed are embodiments of a method for reducing and/or eliminating mismatch. The embodiments sample the bias of one or more circuit sub-components that require a balanced state (e.g., sampling the bias of the cross-coupled transistors in each memory cell and/or sense amp in a memory array) before chip burn-in, by initiating a burn-in process during which an individually selected state is applied to each of the devices in the circuit. This fatigues the devices away from their preferred states and towards a balanced state. The bias is periodically reassessed during the burn-in process to avoid over-correction. By using this method both memory cell and sense-amplifier mismatch can be reduced in memory arrays, resulting in smaller timing uncertainty and therefore faster memories. | 09-11-2008 |
| 20080251852 | E-FUSE AND METHOD - An e-fuse circuit, a method of programming the e-fuse circuit, and a design structure of the e-fuse circuit. The method includes in changing the threshold voltage of one selected field effect transistor of two field effect transistors connected to different storage nodes of the circuit so as to predispose the circuit place the storage nodes in predetermined and opposite states. | 10-16-2008 |
| 20080253042 | E-FUSE AND METHOD - An e-fuse circuit and a method of programming the e-fuse circuit method. The method includes in changing the threshold voltage of one selected field effect transistor of two field effect transistors connected to different storage nodes of the circuit so as to predispose the circuit place the storage nodes in predetermined and opposite states. | 10-16-2008 |
| 20090021085 | DESIGN STRUCTURES, METHOD AND SYSTEMS OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
| 20090022203 | METHOD AND SYSTEMS OF POWERING ON INTEGRATED CIRCUIT - Method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
| 20090024972 | STRUCTURES OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
| 20090099828 | Device Threshold Calibration Through State Dependent Burnin - Disclosed are embodiments of a design structure for reducing and/or eliminating mismatch. The embodiments sample the bias of one or more circuit sub-components that require a balanced state (e.g., sampling the bias of the cross-coupled transistors in each memory cell and/or sense amp in a memory array) before chip burn-in, by initiating a burn-in process during which an individually selected state is applied to each of the devices in the circuit. This fatigues the devices away from their preferred states and towards a balanced state. The bias is periodically reassessed during the burn-in process to avoid over-correction. By using this method both memory cell and sense-amplifier mismatch can be reduced in memory arrays, resulting in smaller timing uncertainty and therefore faster memories. | 04-16-2009 |
| 20090102529 | SHIFTING INACTIVE CLOCK EDGE FOR NOISE REDUCTION - An integrated circuit and a design structure are disclosed. An integrated circuit may comprise: multiple clocked elements; a clock signal source providing clock signals to the multiple clocked elements; and a clock shifting means coupled between the clock signal source and each of the multiple clocked elements; wherein the clock shifting means shifts clock signals of the multiple clocked elements such that the clock signals of the multiple clocked elements have aligned active edges and misaligned inactive edges to reduce the clock noise generated by the inactive edges of the clock signals. | 04-23-2009 |
| 20090106724 | Transition Balancing For Noise Reduction/Di/Dt Reduction During Design, Synthesis, and Physical Design - An embodiment of a design structure is shown for noise reduction comprising synthesizing blocks of sequential latches, e.g., a pipeline circuit architecture or clocking domain, which comprises combinational logic, synthesizing a root or a master clock and at least one phase-shifted sub-domain clock for each block, assigning primary inputs and primary outputs of the block to the root clock, assigning non-primary inputs and non-primary outputs of the block to the sub-domain clock, splitting root clock inputs into root clock inputs and phase-shifted sub-domain clock inputs, assigning each of the blocks a different phase-shifted sub-domain clock phase offset, creating a clock generation circuitry for the root clocks and the phase-shifted sub-domain clocks. | 04-23-2009 |
| 20090108869 | Design Structure for a Flexible Multimode Logic Element For Use In A Configurable Mixed-Logic Signal Distribution Path - A design structure for a multimode circuit that is configured to operate in one of multiple operating modes is disclosed. In particular, an exemplary multimode circuit may be configured to operating in one of a full-swing mode, a limited-swing mode, a full-swing to limited-swing converter mode, and a limited-swing to full-swing converter mode. The operating modes of the multimode circuit may be dynamically selectable. One or more multimode circuits may be part of a configurable distribution path for controlling the performance of a signal distribution path or tree of an integrated circuit. | 04-30-2009 |
| 20090141527 | APPARATUS AND METHOD FOR IMPLEMENTING MATRIX-BASED SEARCH CAPABILITY IN CONTENT ADDRESSABLE MEMORY DEVICES - A content addressable memory (CAM) device includes an array of memory cells arranged in rows in a word line direction and columns arranged in a bit line direction, and compare circuitry configured to compare data presented to the array with data stored in each row and column of the array, and simultaneously indicate match results on each row and column of the array, thereby resulting in a two-dimensional, matrix-based data comparison operation. | 06-04-2009 |
| 20090141528 | APPARATUS AND METHOD FOR IMPLEMENTING ENHANCED CONTENT ADDRESSABLE MEMORY PERFORMANCE CAPABILITY - A content addressable memory (CAM) device includes an array of memory cells arranged in rows and columns; compare circuitry configured to indicate match results of search data presented to each row of the array; and compare circuitry configured to indicate match results of search data presented to each column of the array, thereby resulting in a two-dimensional search capability of the array. | 06-04-2009 |
| 20090141529 | DESIGN STRUCTURE FOR IMPLEMENTING MATRIX-BASED SEARCH CAPABILITY IN CONTENT ADDRESSABLE MEMORY DEVICES - A design structure embodied in a machine readable medium used in a design process includes a content addressable memory (CAM) device having an array of memory cells arranged in rows in a word line direction and columns arranged in a bit line direction, and compare circuitry configured to compare data presented to the array with data stored in each row and column of the array, and simultaneously indicate match results on each row and column of the array, thereby resulting in a two-dimensional, matrix-based data comparison operation. | 06-04-2009 |
| 20090141530 | STRUCTURE FOR IMPLEMENTING ENHANCED CONTENT ADDRESSABLE MEMORY PERFORMANCE CAPABILITY - A design structure embodied in a machine readable medium used in a design process includes a content addressable memory (CAM) device having an array of memory cells arranged in rows and columns; compare circuitry configured to indicate match results of search data presented to each row of the array; and compare circuitry configured to indicate match results of search data presented to each column of the array, thereby resulting in a two-dimensional search capability of the array. | 06-04-2009 |
| 20090141537 | APPARATUS AND METHOD FOR IMPLEMENTING MEMORY ARRAY DEVICE WITH BUILT IN COMPUTATIONAL CAPABILITY - A computational memory device includes an array of memory cells arranged in rows and columns, and a pair of read word lines associated with each row of the array. The array is configured to implement, for a given cycle, either a read operation of data contained in a single selected row, or one of a plurality of different bit wise logical operations on data contained in multiple selected rows. | 06-04-2009 |
| 20090141566 | STRUCTURE FOR IMPLEMENTING MEMORY ARRAY DEVICE WITH BUILT IN COMPUTATION CAPABILITY - A design structure embodied in a machine readable medium used in a design process includes computational memory device having an array of memory cells arranged in rows and columns, and a pair of read word lines associated with each row of the array. The array is configured to implement, for a given cycle, either a read operation of data contained in a single selected row, or one of a plurality of different bit wise logical operations on data contained in multiple selected rows. | 06-04-2009 |
| 20090303820 | APPARATUS AND METHOD FOR LOW POWER SENSING IN A MULTI-PORT SRAM USING PRE-DISCHARGED BIT LINES - A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential. | 12-10-2009 |
| 20090303821 | Apparatus and Method for Low Power, Single-Ended Sensing in a Multi-Port SRAM Using Pre-Discharged Bit Lines - An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun. | 12-10-2009 |
| 20090327620 | CIRCUIT STRUCTURE AND METHOD FOR DIGITAL INTEGRATED CIRCUIT PERFORMANCE SCREENING - Disclosed is a semiconductor chip with a digital integrated circuit, such as a memory device (e.g., static random access memory (SRAM) arrays, dynamic random access memory (DRAM) arrays, content addressable memory (CAM) arrays, etc), that can be selectively operated in either a functional mode or in a performance screening mode. In the functional mode, a first signal supplied by an external signal generator is used to activate a first device in the circuit and, in response, a second device in the circuit outputs a data output signal. In the performance screening mode, a second signal is internally generated by an internal signal generator based on the data output signal. This second signal is then used to activate the first device in the circuit and, in response, the second device outputs the data output signal. Thus, in the performance screening mode, the digital integrated circuit is effectively converted into a performance screen ring oscillator (PSRO), the output of which can be monitored to determine whether performance criteria for the digital integrated circuit are met. | 12-31-2009 |
| 20100031067 | Adaptive Noise Suppression Using a Noise Look-up Table - A proactive noise suppression system and method for a power supply network of an integrated circuit. The system and method include receiving an IC event sequence to a memory element, correlating the IC event sequence to a storage location in a second memory element, the storage location including an anti-noise response signature, and utilizing the anti-noise response signature to proactively generate an anti-noise response in a power supply network in at least a portion of the integrated circuit at about the time of execution of the first IC event sequence. Anti-noise response signatures may be adaptively updated and/or created based on noise measurements made corresponding to execution of an IC event sequence by the integrated circuit. | 02-04-2010 |
| 20100201377 | Critical Path Redundant Logic for Mitigation of Hardware Across Chip Variation - Cross-die connection structure and method for a die or chip includes buffer elements having a buffer driver and bypass, and control lines coupled to the buffer elements in order to select one of the buffer driver and bypass for each respective buffer element. A logic network is arranged with the buffer elements to form functional paths, a test unit is structured and arranged to test the functional paths and to be coupled to the control lines, and a configuration storage register to set the selected one of the buffer driver and bypass for each passing functional path. | 08-12-2010 |
| 20100228861 | ENVIRONMENTAL AND COMPUTING COST REDUCTION WITH IMPROVED RELIABILITY IN WORKLOAD ASSIGNMENT TO DISTRIBUTED COMPUTING NODES - A system and method of allocating a job submission for a computational task to a set of distributed server farms each having at least one processing entity comprising; receiving a workload request from at least one processing entity for submission to at least one of the set of distributed server farms; using at least one or more conditions associated with the computational task for accepting or rejecting at least one of the server farms to which the job submission is to be allocated; determining a server farm that can optimize the one or more conditions; and dispatching the job submission to the server farm which optimizes the at least one of the one or more conditions associated with the computational task and used for selecting the at least one of the server farms. | 09-09-2010 |
| 20100309740 | Low Power, Single-Ended Sensing in a Multi-Port SRAM Using Pre-Discharged Bit Lines - An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun. | 12-09-2010 |
| 20100315894 | Low Power Sensing In a Multi-Port Sram Using Pre-Discharged Bit Lines - A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential. | 12-16-2010 |
| 20110085390 | WORD-LINE LEVEL SHIFT CIRCUIT - A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a restore input at the higher voltage, wherein the first and second transistors are coupled along a series path to a source at the higher voltage; a control node along the series path; an output node coupled to the control node via a first pair of parallel transistors; and a feedback circuit having a second pair of parallel transistors and a feedback transistor, wherein the feedback transistor couples the second pair of parallel transistors to the control node and is gated by the output node. | 04-14-2011 |
| 20110088005 | METHOD AND APPARATUS FOR CONFIGURING A CONTENT-ADDRESSABLE MEMORY (CAM) DESIGN AS BINARY CAM OR TERNARY CAM - A method for producing a configurable content-addressable memory (CAM) cell design, in which the method includes: inputting the configurable CAM cell design to a computer, the configurable CAM cell design capable of being configured as one of a binary CAM design and a ternary CAM design, depending on connections of a metal overlay; selecting one of a first metal overlay design for the binary CAM design and a second metal overlay design for a ternary CAM design; if the first metal overlay design is selected, then combining the first metal overlay design with the configurable CAM cell design to produce a binary CAM design including two binary CAM cells with a single search port, and outputting the binary CAM design; and if the second metal overlay design is selected, then combining the second metal overly design with the configurable CAM cell design to produce a ternary CAM design including a single ternary CAM cell with two search ports, and outputting the ternary CAM design by the computer. | 04-14-2011 |
| 20110090750 | SRAM DELAY CIRCUIT THAT TRACKS BITCELL CHARACTERISTICS - An SRAM delay circuit that tracks bitcell characteristics. A circuit is disclosed that includes an input node for receiving an input signal; a reference node for capturing a reference current from a plurality of reference cells; a capacitance network having a discharge that is controlled by the reference current; and an output circuit that outputs the input signal with a delay, wherein the delay is controlled by the discharge of the capacitance network. | 04-21-2011 |
| 20110096582 | CONTENT ADDRESSABLE MEMORY WITH CONCURRENT TWO-DIMENSIONAL SEARCH CAPABILITY IN BOTH ROW AND COLUMN DIRECTIONS - A content addressable memory (CAM) device includes an array of memory cells arranged in rows and columns; compare circuitry configured to indicate match results of search data presented to each row of the array; and compare circuitry configured to indicate match results of search data presented to each column of the array, thereby resulting in a two-dimensional search capability of the array. | 04-28-2011 |
