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Ienaga
Masayuki Ienaga, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090265478 | METHOD AND APPARATUS FOR DATA STREAM ANALYSIS AND DECODING APPARATUS - If a variable length data stream is transmitted, ignoring a data alignment in a client using a network, the present invention provides a mechanism to analyze the data stream and generate a data stream that can be used by an existing AV equipment. A data stream analysis apparatus includes a buffer which receives and holds a part of a variable length data stream as input data, where the variable length data stream has header information and transfer information, a stream information holder which holds stream information regarding the data stream, and a data analyzer which analyzes the stream information and input data newly received, generates new stream information using the input data and the stream information if the header information cannot be obtained, stores the new stream information to the stream information holder, and outputs transfer information included in the input data if the header information is detected. | 10-22-2009 |
Takashi Ienaga, Isehara JP
| Patent application number | Description | Published |
|---|---|---|
| 20120034765 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film. | 02-09-2012 |
Teruhiko Ienaga, Otsu JP
| Patent application number | Description | Published |
|---|---|---|
| 20090078301 | SOLAR CELL MODULE - According to a solar cell module | 03-26-2009 |
Teruhiko Ienaga, Izumisano City JP
| Patent application number | Description | Published |
|---|---|---|
| 20080295881 | SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SOLAR CELL MODULE - On a projected plane in parallel to the main surface of the solar cell module | 12-04-2008 |
Yuichi Ienaga, Wako-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090162242 | HEAT RESISTANT MAGNESIUM ALLOY AND PRODUCTION PROCESS THEREOF - Provided are a heat-resistant magnesium alloy which has at the same time both high strength and high ductility even under high temperature environment and is also inexpensive, and a production process of the heat-resistant magnesium alloy. The heat-resistant magnesium alloy includes, in relation to the total amount of the alloy, 1 to 3 at % of Zn, 1 to 3 at % of Y and 0.01 to 0.5 at % of Zr with the balance composed of Mg and inevitable impurities, wherein the composition ratio Zn/Y between Zn and Y falls within a range from 0.6 to 1.3, an a-Mg phase and an intermetallic compound Mg | 06-25-2009 |
Yuuichi Ienaga, Saitama JP
| Patent application number | Description | Published |
|---|---|---|
| 20080317621 | Process for Producing Mg Alloy - An object of the present invention is to obtain an ingot containing homogeneous ingredients with suppressing ingredient segregation of Y in the melt-production of an Mg alloy containing Y. | 12-25-2008 |