Patent application number | Description | Published |
20080203526 | Semiconductor device equipped with thin-film circuit elements - A plurality of wirings, column-shaped electrodes, sealing films, and soldering balls, are provided on a third upper-layer insulating film formed on a silicon substrate. A spirally configured thin-film inductive element is disposed beneath the bottom surface of a ground insulating film formed beneath the silicon substrate. The inner and outer end portions of the thin-film inductive element are respectively connected to the wirings via a vertical conductor disposed in the silicon substrate. In this case, it is not required to secure a certain area otherwise needed for the formation of the thin-film inductive element over the surface of the third upper-layer insulating film that accommodates the wirings. Hence, even when the thin-film inductive element has been provided, it is possible to evade a feasibility to incur restraint on the distribution of the wirings formed over the surface of the third upper-layer insulating film. | 08-28-2008 |
20090200665 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor construction assembly having a semiconductor substrate which has first and second surfaces, and has an integrated circuit element formed on the first surface, a plurality of connection pads which are connected to the integrated circuit element, a protective layer which covers the semiconductor substrate and has openings for exposing the connection pads, and conductors which are connected to the connection pads, arranged on the protective layer, and have pads. An upper insulating layer covers the entire upper surface of the semiconductor construction assembly including the conductors except the pads. A sealing member covers at least one side surface of the semiconductor construction assembly. An upper conductors is formed on the upper insulating layer, and has one ends electrically connected to the pads and an external connection pads, respectively, an external connection pad of at least one of the upper conductors being disposed in a region corresponding to the sealing member. | 08-13-2009 |
20100019383 | METHOD OF FORMING WIRING ON A PLURALITY OF SEMICONDUCTOR DEVICES FROM A SINGLE METAL PLATE, AND A SEMICONDUCTOR CONSTRUCTION ASSEMBLY FORMED BY THE METHOD - In this manufacturing method of a semiconductor device, a metal plate having a plurality of projection electrodes in each of a plurality of semiconductor device formation areas is prepared. Next, the projection electrodes of each of the semiconductor formation areas are aligned corresponding to external connection electrodes of each semiconductor construction, and each semiconductor construction is separately arranged on the projection electrodes in the semiconductor device formation areas. Next, an insulating layer formation sheet is arranged on the metal plate, and the metal plate and the insulating layer formation sheet are joined by heat pressing. Then, the metal plate is patterned and a plurality of upper layer wirings that connect to the projection electrodes is formed. | 01-28-2010 |
20100244188 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a semiconductor device comprising: a semiconductor substrate in which an integrated circuit is formed; a first resin film provided over the semiconductor substrate; a second resin film provided over an upper surface of the first resin film except at least a peripheral portion of the first resin film; and a thin film inductor provided over the second resin film. | 09-30-2010 |
Patent application number | Description | Published |
20080286903 | Semiconductor device packaged into chip size and manufacturing method thereof - A semiconductor device includes a semiconductor substrate having an integrated circuit and at least one connection pad, and at least one external connection electrode electrically connected with the connection pad. A first sealing material is provided on the semiconductor substrate around the external connection electrode, each impurity concentration of an Na ion, a K ion, a Ca ion and Cl ion contained in the first sealing material being not greater than 10 ppm. A second sealing material is provided on at least one of a lower surface and a peripheral side surface of the semiconductor substrate, a total impurity concentration of an Na ion, a K ion, a Ca ion and a Cl ion contained in the second sealing material being not smaller than 100 ppm. | 11-20-2008 |
20090065926 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor. | 03-12-2009 |
20090079072 | Semiconductor device having low dielectric insulating film and manufacturing method of the same - A semiconductor device includes a semiconductor substrate having an integrated circuit. A low dielectric film wiring line laminated structure portion is provided on the semiconductor substrate except a peripheral portion thereof, and is constituted by low dielectric films and wiring lines. The low dielectric film has a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the laminated structure portion. A connection pad portion is arranged on the insulating film and connected to a connection pad portion of an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film is provided on the insulating film which surrounds the pump electrode and on the peripheral portion of the semiconductor substrate. The side surfaces of the laminated structure portion are covered with the insulating film or the sealing film. | 03-26-2009 |
20090079073 | Semiconductor device having low dielectric insulating film and manufacturing method of the same - A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film. | 03-26-2009 |
20090174062 | CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF CIRCUIT BOARD - A circuit board includes a semiconductor substrate which has a plurality of through holes passing from an upper surface to a lower surface thereof. A plurality of wiring lines are provided on the upper surface of the semiconductor substrate and have bottomed cylindrical portions located within regions corresponding to the through holes. Bottom surfaces of the bottomed cylindrical portions of the wiring lines serve as connection pad portions. | 07-09-2009 |
20100178731 | SEMICONDUCTOR DEVICE HAVING A PLURALITY OF SEMICONDUCTOR CONSTRUCTS - A semiconductor device includes a plurality of semiconductor constructs, each of the semiconductor constructs including a semiconductor substrate and external connection electrodes provided on an upper surface of the semiconductor substrate. The semiconductor substrates of the semiconductor constructs are different in a planar-size. The plurality of semiconductor constructs are stacked from bottom to top in descending order of planar-sizes of the semiconductor substrates included in the plurality of semiconductor constructs. An insulating film at least is provided around one semiconductor construct disposed on the top of the plurality of semiconductor constructs and on another semiconductor construct disposed under the one semiconductor construct. Each of the upper surfaces of the plurality of external connection electrodes is exposed from the one semiconductor construct and from the insulating film. | 07-15-2010 |
20110291212 | IMAGING APPARATUS HAVING PHOTOSENSOR AND MANUFACTURING METHOD OF THE SAME - A photosensor comprises a photoelectric conversion device region and a connection pad on the lower surface of a semiconductor substrate, and also comprises a wiring line connected to the connection pad via insulating film under the semiconductor substrate, and a columnar electrode as an external connection electrode connected to the wiring line. As a result, as compared with the case where the photoelectric conversion device region and the connection pad connected to the photoelectric conversion device region are formed on the upper surface of the semiconductor substrate, a piercing electrode for connecting the connection pad and the wiring line does not have to be formed in the semiconductor substrate. Thus, the number of steps can be smaller, and a fabrication process can be less restricted. | 12-01-2011 |
20140073090 | SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC INSULATING FILM AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the bump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film. | 03-13-2014 |