Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Ichijo
Hisao Ichijo, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20110101454 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A P type semiconductor substrate includes a P type body region, an N type drift region formed away from the P type body region in a direction parallel to a substrate surface, an N type drain region formed in a region separated by a field oxide film in the N type drift region so as to have a concentration higher than the N type drift region, an N type source region formed in the P type body region so as to have a concentration higher than the N type drift region. A P type buried diffusion region having a concentration higher than the N type drift region is formed of a plurality of parts each of which is connected to a part of the bottom surface of the P type body region and extends parallel to the substrate surface and its tip end reaches the inside of the drift region. | 05-05-2011 |
Hisao Ichijo, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100065909 | Semiconductor device and method for making the same - To provide a semiconductor device and a method of making the same, the device being capable of preventing decrease in the withstanding voltage along the direction perpendicular to the source-drain direction and thereby improving the resistance to an overvoltage (overcurrent), the device includes: a p-type semiconductor substrate | 03-18-2010 |
Hisao Ichijo, Kizugawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090159970 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - Provided are a semiconductor device which can be manufactured at low cost and has a low on-resistance and a high withstand voltage, and its manufacturing method. The semiconductor device comprises an N-type well area formed on a P-type semiconductor substrate, a P-type body area formed within the well area, an N-type source area formed within the body area, an N-type drain area formed at a distance from the body area within the well area, a gate insulating film formed so as to overlay a part of the body area, a gate electrode formed on the gate insulating film and a P-type buried diffusion area which makes contact with the bottom of the body area and extends to an area beneath the drain area in a direction parallel to the surface of the semiconductor substrate within the well area. | 06-25-2009 |
Mitsuhiro Ichijo, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20080308807 | Display device and manufacturing method thereof - It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insulating film in contact with the microcrystalline semiconductor film, and a gate electrode overlap with each other, an antioxidant film is formed on a surface of the microcrystalline semiconductor film. The antioxidant film on the surface of the microcrystalline semiconductor film can prevent a surface of a microcrystal grain from being oxidized, thereby preventing the mobility of the thin film transistor from decreasing. | 12-18-2008 |
| 20100151664 | Method of Manufacturing a Semiconductor Device - At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber. | 06-17-2010 |
Mitsuhiro Ichijo, Atsugi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080251792 | Luminescent device and process of manufacturing the same - In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. | 10-16-2008 |
Nagahito Ichijo, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100104316 | ELECTROSTATIC CHARGING MEMBER, ELECTROSTATIC CHARGING DEVICE, PROCESS CARTRIDGE AND IMAGE FORMING APPARATUS - An electrostatic charging member includes a base material; and an outermost layer that contains a porous filler and a resin and has a gel fraction of at least about 50% and a surface roughness Rz in a range of about 2 μm to about 20 μm. | 04-29-2010 |