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Ibbetson
David Ibbetson, West Yorkshire GB
| Patent application number | Description | Published |
|---|---|---|
| 20090072927 | TUNEABLE BANDPASS FILTER - A tuneable bandpass filter comprising a plurality of coupled resonators, the filter comprising | 03-19-2009 |
James Ibbetson, Goleta, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090159918 | SEMICONDUCTOR LIGHT EMITTING DEVICES AND SUBMOUNTS AND METHODS FOR FORMING THE SAME - A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided. | 06-25-2009 |
| 20090166658 | LIGHT EMITTING DIODES INCLUDING TWO REFLECTOR LAYERS - A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided. | 07-02-2009 |
| 20100283077 | LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES - Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face. | 11-11-2010 |
James Ibbetson, Sant Barbara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100155746 | HIGH VOLTAGE LOW CURRENT SURFACE-EMITTING LED - A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. | 06-24-2010 |
James P. Ibbetson, Santa Barbara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100224860 | HIGH EFFICIENCY LEDS WITH TUNNEL JUNCTIONS - An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction. | 09-09-2010 |