Patent application number | Description | Published |
20080315916 | CONTROLLING MEMORY DEVICES THAT HAVE ON-DIE TERMINATION - A memory controller for controlling integrated circuit memory devices that have on-die termination. The memory controller includes an output driver to output a first data signal onto a data line, and termination control circuitry to output termination control signals to integrated circuit memory devices coupled to the data line. The termination control signals control coupling and decoupling of termination elements to the data line according to which of the plurality of integrated circuit memory devices is selected to receive the first data signal. In particular, the termination control signals specify coupling a termination element having an impedance indicated by a first termination value to the data line within one of the plurality of integrated circuit memory devices selected to receive the first data signal, and wherein the termination control signals further specify coupling a termination element having an impedance indicated by a second termination value to the data line within at least one other of the plurality of integrated circuit memory devices. | 12-25-2008 |
20090130798 | Process for Making a Semiconductor System - Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device. | 05-21-2009 |
20090238025 | MEMORY CONTROLLER WITH STAGGERED REQUEST SIGNAL OUTPUT - A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request. | 09-24-2009 |
20090284281 | MEMORY-MODULE BUFFER WITH ON-DIE TERMINATION - In memory module having multiple data inputs to couple to signal lines of an external data path, multiple memory integrated-circuits (ICs) and a buffer IC, the buffer IC includes respective interfaces coupled to the data inputs and the memory ICs, a first termination circuit having a first load element and a first switch element to switchably couple the first load element to a first data input of the data inputs and a second termination circuit having a second load element and a second switch element to switchably couple the second load element to the first data input. The buffer IC further includes a configuration circuit to store, in response to control information from a memory controller, a first digital value and a second digital value, the first digital value being supplied to the first termination circuit to control an impedance of the first load element and the second digital value being supplied to the second termination circuit to control an impedance of the second load element. | 11-19-2009 |
20100027356 | Dynamic On-Die Termination of Address and Command Signals - A system includes a plurality of memory devices arranged in a fly-by topology, each of the memory devices having on-die termination (ODT) circuitry for connection to an address and control (RQ) bus. The ODT circuitry has at least one input for controlling termination of one or more signal lines of the RQ bus. Application of a first logic level to the at least one input enables termination of the one or more signal lines. Application of a second logic level to the at least one input disables termination of the one or more signal lines. | 02-04-2010 |
20100039875 | Strobe Acquisition and Tracking - A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command if a time interval since a last read command issued by the memory controller exceeds a predetermined value. | 02-18-2010 |
20100315122 | MEMORY CONTROLLER THAT CONTROLS TERMINATION IN A MEMORY DEVICE - A memory controller that controls termination in a memory device. The memory controller includes a data interface, command/address interface and termination control output. The data interface outputs write data onto a data line coupled to a data input of the memory device, and the command/address interfaces outputs, onto a command/address path coupled to the memory device, information that indicates whether the write data is to be received within the memory device. The termination control output asserts a first termination control signal on a termination control signal line coupled to the memory device to cause the memory device to either (i) couple a first termination impedance to the data line while the write data is present at the data input of the memory device if the information indicates that the write data is to be received within the memory device, or (ii) couple a second termination impedance to the data line while the write data is present at the data input of the memory device if the information indicates that the write data is not to be received within the memory device. | 12-16-2010 |
20110156750 | INTEGRATED CIRCUIT DEVICE WITH DYNAMICALLY SELECTED ON-DIE TERMINATION - In an integrated circuit device having dynamically selected on-die termination, a set of data inputs are coupled respectively to a set of termination circuits, each termination circuit having multiple controllable termination impedance configurations. A termination control signal input is provided to receive an indication that the integrated circuit device is to apply one of the controllable termination impedance configurations at each of the data inputs, and a logic circuit applies one of a first and a second of the controllable termination impedance configurations at the data inputs based on the indication received at the termination control signal input and an internal state of the memory device, such that during a first internal state corresponding to the reception of write data on the data inputs, the first of the controllable termination impedance configurations is applied at each of the data inputs, and during a second internal state following the first internal state, the second of the controllable termination impedance configurations is applied at each of the data inputs. | 06-30-2011 |
20110241727 | DYNAMIC ON-DIE TERMINATION SELECTION - In an integrated circuit device having dynamically selected on-die termination, a set of data inputs are coupled respectively to a set of termination circuits, each termination circuit having multiple controllable termination impedance configurations. A termination control signal input is provided to receive an indication that the integrated circuit device is to apply one of the controllable termination impedance configurations at each of the data inputs, and a logic circuit applies one of a first and a second of the controllable termination impedance configurations at the data inputs based on the indication received at the termination control signal input and an internal state of the memory device, such that during a first internal state corresponding to the reception of write data on the data inputs, the first of the controllable termination impedance configurations is applied at each of the data inputs, and during a second internal state following the first internal state, the second of the controllable termination impedance configurations is applied at each of the data inputs. | 10-06-2011 |
20110248407 | Process For Making a Semiconductor System - Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device. | 10-13-2011 |
20110267101 | CONTROLLING DYNAMIC SELECTION OF ON-DIE TERMINATION - A control component outputs to an integrated circuit device an indication to apply one of a plurality of controllable termination impedance configurations at a data input of the integrated circuit device. The indication causes the integrated circuit device to apply a first of the controllable termination impedance configurations at the data input during a first internal state of the integrated circuit device corresponding to the reception of write data on the data input, and causes the integrated circuit device to apply a second of the controllable termination impedance configurations at the data input during a second internal state of the integrated circuit device that follows the first internal state. | 11-03-2011 |
20120188835 | INTEGRATED CIRCUIT WITH STAGGERED SIGNAL OUTPUT - A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request. | 07-26-2012 |
20120265930 | CONTROLLING ON-DIE TERMINATION IN A DYNAMIC RANDOM ACCESS MEMORY DEVICE - An integrated circuit device transmits, to a dynamic random access memory device (DRAM), a write command indicating that write data is to be sampled by a data interface of the DRAM, and a plurality of commands that specify programming a plurality of control values into a plurality of corresponding registers in the DRAM. The plurality of control values include first and second control values that indicate respective first and second terminations that the DRAM is to apply to the data interface during a time interval that begins a predetermined amount of time after the DRAM receives the write command, the first termination to be applied during a first portion of the time interval while the data interface is sampling the write data and the second termination to be applied during a second portion of the time interval after the write data is sampled. | 10-18-2012 |
20140329359 | PROCESS FOR MAKING A SEMICONDUCTOR SYSTEM - Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device. | 11-06-2014 |