Patent application number | Description | Published |
20080216871 | METHOD AND SYSTEM FOR MONITORING CONTAMINATION ON A SUBSTRATE - A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning. | 09-11-2008 |
20110205505 | LINE PATTERN COLLAPSE MITIGATION THROUGH GAP-FILL MATERIAL APPLICATION - Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching. | 08-25-2011 |
20120247505 | ETCH SYSTEM AND METHOD FOR SINGLE SUBSTRATE PROCESSING - Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide. | 10-04-2012 |
20120248061 | INCREASING MASKING LAYER ETCH RATE AND SELECTIVITY - Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate, wherein the system comprises a plurality of substrates containing the masking layer and a layer of silicon or silicon oxide, an etch processing chamber configured to process the plurality of substrates, the processing chamber containing a treatment liquid for etching the masking layer, and a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure, wherein the steam water vapor mixture is introduced into the processing chamber at a controlled rate to maintain a selected target etch rate and a target etch selectivity ratio of the masking layer to silicon or silicon oxide. | 10-04-2012 |
20130233343 | SEQUENTIAL STAGE MIXING FOR SINGLE SUBSTRATE STRIP PROCESSING - Provided is a method for a resist removal system comprising a processing chamber and treatment liquid delivery system for single substrate processing. A primary stripping chemical is flowed in the treatment liquid delivery system at a primary temperature and flow rate; a secondary stripping chemical is injected at a first mixing point at a secondary temperature and flow rate. A tertiary stripping chemical is injected at a second mixing point at a tertiary temperature and a tertiary flow rate. The treatment liquid is dispensed onto a portion of the surface of the substrate wherein one or more of the primary temperature, secondary temperature, tertiary temperature, the primary flow rate, the secondary flow rate, and the tertiary flow rate are adjusted to meet a target strip rate and selectivity of strip over etch of silicon nitride and silicon oxide. | 09-12-2013 |
20130233351 | SEQUENTIAL STAGE MIXING FOR A RESIST BATCH STRIP PROCESS - Provided is a method and system for stripping a resist film on a plurality of substrates in a resist removal system comprising a processing chamber coupled to a recirculation system comprising a recycle sub-system and a bypass sub-system. The recycle sub-system includes a recycle line, an inline heater, a ratio monitor and control system, and recirculation injection device. The bypass sub-system comprises a treatment liquid supply line, a first injection line, a mixing device, and a second injection line. The treatment liquid comprises a primary stripping chemical, secondary stripping chemical, tertiary stripping chemical, and one or more reactive products. One or more of the temperatures, concentrations, and/or flow rates of the recirculated treatment liquid and/or injected stripping chemicals are adjusted to meet a target strip rate and selectivity for strip over etch of silicon nitride or silicon oxide. | 09-12-2013 |
20130319459 | SONIC ENERGY TO GENERATE ACTIVE SPECIES FOR SURFACE PREPARATION, CLEANING, AND ETCHING - Provided is a method for generating active species in a treatment liquid used in a surface treatment system, the surface treatment system comprising a processing chamber and a treatment liquid delivery system, the treatment liquid delivery system having a mixing zone and an active species generation zone. A substrate and a treatment liquid comprising one or more chemical solutions and/or one or more process gases are provided. Sonic energy is applied to the treatment liquid in a mixing zone and/or an active species generation zone using one or more sonic devices. One or more selected surface treatment operating variables are controlled to optimize generation of active species in the treatment liquid. The one or more selected surface treatment operating variables are adjusted in order to meet one or more surface treatment objectives. | 12-05-2013 |
20130319465 | METHOD AND SYSTEM FOR RAPID MIXING OF PROCESS CHEMICALS USING AN INJECTION NOZZLE - A method and system for rapidly mixing process chemicals are provided. The method includes injecting a second process chemical into a first process chemical at or near the center of the flow stream, in a flow direction that is the same or different from the flow of the first process chemical, to produce uniform mixing within a target mixing distance and target mixing time. The system includes a first process chemical supply line, a second process chemical supply line, and one or more nozzles configured to produce uniform mixing within a target mixing distance and target mixing time. | 12-05-2013 |
20140007902 | METHOD OF STRIPPING PHOTORESIST ON A SINGLE SUBSTRATE SYSTEM - Provided is a method and system for stripping an ion implanted resist or performing a post-ash clean using a single substrate tool. Cleaning objectives and cleaning operating variables are selected for optimization. The first step immerses the substrate in a first treatment chemical, while concurrently irradiating the substrate with UV light, the process completed in a first process time, a first flow rate, and a first rotation speed of the substrate. The second step dispenses onto the substrate a second treatment chemical at a second temperature and a second composition, the second treatment chemical dispensed at a dispense temperature, and completed in a second process time and a second rotation speed. The two or more selected cleaning operating variables comprise UV wavelength, UV power, first concentration, first rotation speed, first flow rate, second process time, second rotation speed, percentage of residue removal, and dispense temperature. | 01-09-2014 |
20140096792 | PROCESS GAS GENERATION FOR CLEANING OF SUBSTRATES - Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system and a wet clean system. One or more objectives for the pre-treatment system are selected and two or more pre-treatment operating variables including UV dose, substrate temperature, oxygen partial pressure, oxygen and ozone partial pressure, and/or total pressure, are optimized to meet the pre-treatment objectives, using metrology measurements. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. A pre-treatment gas comprising oxygen and/or ozone is delivered onto a surface of the substrate and irradiated with a UV device, generating oxygen radicals. Cleaning of the substrate in the pre-treatment process is set at less than 100% in order to ensure the change in k-value of the substrate is within a set range for the substrate application. | 04-10-2014 |
20140130825 | SUBSTRATE CLEANING METHOD AND SYSTEM USING ATMOSPHERIC PRESSURE ATOMIC OXYGEN - Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system using an atomic oxygen generator. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. Pre-treatment gas comprising oxygen and an inert gas are delivered into an atomic oxygen generator, generating a process gas containing atomic oxygen. A portion of a surface of the substrate is exposed to the process gas while controlling two or more cleaning operating variables to ensure meeting two or more cleaning objectives and ensure completion of cleaning in the pre-treatment process time. In an embodiment, cleaning of the substrate in the pre-treatment process is set at less than 100 percent and a subsequent wet cleaning process is used to complete the substrate cleaning. In another embodiment, the pre-treatment system is configured to complete cleaning of the substrate. | 05-15-2014 |
20140137892 | METHOD AND SYSTEM OF PROCESS CHEMICAL TEMPERATURE CONTROL USING AN INJECTION NOZZLE - A method of process chemical temperature control for resist stripping of a substrate in a resist stripping system includes selecting at least two temperature control objectives and selecting at least two temperature control operating variables for optimization to achieve the at least two temperature control objectives. The method further includes injecting and mixing a first process chemical and a second process chemical into a treatment liquid delivery system of the resist stripping system, which forms a treatment liquid including an active species. The method further includes injecting vapor into the treatment liquid delivery system. The vapor is injected into the treatment liquid or the treatment liquid is injected into the vapor. Treatment liquid is dispensed from the dispensing device onto the substrate. At least two of the temperature control operating variables are adjusted in response to at least two metrology data values. | 05-22-2014 |
20140144463 | CONTROLLING CLEANING OF A LAYER ON A SUBSTRATE USING NOZZLES - Provided is a method for cleaning an on implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives, | 05-29-2014 |