Patent application number | Description | Published |
20090206057 | Method To Improve Mask Critical Dimension Uniformity (CDU) - A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate. | 08-20-2009 |
20100013105 | METHOD OF MANUFACTURING PHOTOMASK AND METHOD OF REPAIRING OPTICAL PROXIMITY CORRECTION - A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data. | 01-21-2010 |
20100053575 | Thermal Control For EUV Lithography - A method of patterning an integrated circuit including generating a thermal profile of a reticle is provided. The thermal profile of the reticle may illustrate heat accumulation (e.g., a temperature) in a EUV reticle due an incident EUV radiation beam. The thermal profile may be determined using the pattern density of the reticle. The reticle is irradiated with a radiation beam having an extreme ultraviolet (EUV) wavelength. A thermal control profile may be generated using the thermal profile, which may define a parameter of the lithography process such as, a temperature gradient of a thermal control chuck. The thermal control profile may be downloaded to the EUV lithography tool (e.g., scanner or stepper) for use in a process. A separate thermal control profile may be provided for different reticles. | 03-04-2010 |
20100308439 | DUAL WAVELENGTH EXPOSURE METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICE MANUFACTURING - A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength. | 12-09-2010 |
20110076843 | LITHOGRAPHY PATTERNING METHOD - A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer. | 03-31-2011 |
20120187571 | METHOD OF MANUFACTURING PHOTOMASK AND METHOD OF REPAIRING OPTICAL PROXIMITY CORRECTION - A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data. | 07-26-2012 |
20130252175 | Litho Cluster and Modulization to Enhance Productivity - The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process. | 09-26-2013 |
20130285264 | WAFER ASSEMBLY WITH CARRIER WAFER - A wafer assembly includes a process wafer and a carrier wafer. Integrated circuits are formed on the process wafer. The carrier wafer is bonded to the process wafer. The carrier wafer has at least one alignment mark. | 10-31-2013 |
20150076371 | LITHO CLUSTER AND MODULIZATION TO ENHANCE PRODUCTIVITY - The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process. | 03-19-2015 |