| Patent application number | Description | Published |
|---|
| 20110012163 | DEVICE HAVING A MULTILAYERED STRUCTURE AND METHOD OF FABRICATING THEREOF - The invention provides a multilayered device and the method for fabricating the same. The multilayered device comprises a substrate, a first layer deposited on the substrate, a second layer deposited on the first layer, and a third layer deposited on the second layer. The coverage of the second layer is determined by a rate of crystallization of the third layer. The rate of crystallization of the third layer is determined by measuring X-ray diffraction of the device. | 01-20-2011 |
| 20110228457 | PORTABLE ELECTRONIC APPARATUS - A portable electronic apparatus including a main body having a front portion and a rear portion, a display unit disposed on the front portion, and a support module disposed on the rear portion, the support module operable to support the main body at an incline relative to a surface, the support module including a support unit, a free end of the support unit being disposed on the rear portion in a first configuration and the free end of the support unit being disposed apart from the rear portion in a second configuration, a guide unit, the guide unit being disposed between the main body and the support unit to guide the rotation of the support unit, and an elastic unit, the elastic unit being connected to the support unit and the rear portion so as to apply an elastic force to the support unit in the direction of rotation of the support unit. | 09-22-2011 |
| Patent application number | Description | Published |
|---|
| 20100247892 | ELECTROCONDUCTIVE PARTICLE AND ANISOTROPIC CONDUCTIVE FILM COMPRISING SAME - The present invention discloses an electroconductive particle comprising (a) a polymer microparticle, and (b) a graphene coating layer grafted on the polymer microparticle, which has improved long-term stability of the conductivity, surface conductivity, durability, and thermal resistance, and is applicable for producing an anisotropic conductive film used for packaging electronic devices. | 09-30-2010 |
| 20110010178 | SYSTEM AND METHOD FOR TRANSFORMING VERNACULAR PRONUNCIATION - Provided is a system and method for transforming vernacular pronunciation with respect to Hanja using a statistical method. In a system for transforming vernacular pronunciation, a vernacular pronunciation extracting unit extracts a vernacular pronunciation with respect to a Hanja character string, a statistical data determining unit determines a statistical data with respect to the Hanja character string by using statistical data of features related to a Hanja-vernacular pronunciation transformation, and a vernacular pronunciation transforming unit transforms the Hanja character string into a vernacular pronunciation using the extracted vernacular pronunciation and the determined statistical data. | 01-13-2011 |
| 20110016075 | SYSTEM AND METHOD FOR CORRECTING QUERY BASED ON STATISTICAL DATA - A system for correcting a query includes a wrong query determination unit to determine whether an inputted query is a wrong query, a per-whole-query correction unit configured to correct the query on a per-whole-query basis, and a per-word correction unit to correct the user query on a per-word basis. A method for correcting a query includes determining whether a query is a wrong query, correcting the query on a per-whole-query basis, and correcting the query on a per-word basis. | 01-20-2011 |
| Patent application number | Description | Published |
|---|
| 20100051099 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO | 03-04-2010 |
| 20100059114 | SOLAR CELL - A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first conductive semiconductor substrate and the second conductive semiconductor layer; a passivated layer formed on the second conductive semiconductor layer and composed of silicon oxynitride with a refractive index of 1.45 to 1.70; an anti-reflection film formed on the passivated layer and composed of silicon nitride; a front electrode connected to the second conductive semiconductor layer with passing through a part of the passivated layer and the anti-reflection film and exposed outward; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate. | 03-11-2010 |
| 20100071762 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate. | 03-25-2010 |
| 20100096013 | SOLAR CELL INCLUDING BACKSIDE REFLECTION LAYER COMPOSED OF HIGH-K DIELECTRICS - A solar cell includes a backside reflection layer containing a high-k dielectrics. The backside reflection layer includes a reflection film containing HfO | 04-22-2010 |
| 20100319763 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell may include forming an emitter region that forms a p-n junction with a semiconductor substrate of a first conductive type, forming a passivation layer on the semiconductor substrate, forming a dopant layer containing impurities of the first conductive type on the passivation layer, and locally forming a back surface field region at the semiconductor substrate by irradiating laser beams onto the semiconductor substrate to diffuse the impurities into the semiconductor substrate. | 12-23-2010 |
| 20110023960 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate. | 02-03-2011 |
