Patent application number | Description | Published |
20110275197 | SEMICONDUCTOR MEMORY DEVICE, METHOD OF FORMING THE SAME, AND MEMORY SYSTEM - A method of forming a semiconductor memory device, a semiconductor memory device, and a memory system, the method including forming a thin film structure on a semiconductor substrate such that the thin film structure includes a plurality of thin films; patterning the thin film structure to form a through region in the thin film structure; forming a first silicon film using a first precursor such that the first silicon film covers the through region; and forming a second silicon film on the first silicon film using a second precursor, wherein the first precursor is different from the second precursor. | 11-10-2011 |
20130162616 | TRANSPARENT DISPLAY APPARATUS - A transparent display apparatus includes a display panel including a plurality of pixels arranged in rows and columns, a plurality of gate lines, a plurality of data lines including first and second data lines, a gate driver, and a data driver. Each of the pixels comprises sub-pixels arranged in a row direction, each gate line is operatively coupled to sub-pixels arranged in a corresponding row, and each first and second data line is operatively coupled to sub-pixels arranged in a corresponding column. The gate driver sequentially applies a gate signal to the pixels through the gate lines. The data driver applies sub-data signals to the sub-pixels through the first data lines, and applies down data signals to the sub-pixels through the second data lines. Each of the down data signals has a voltage level lower than a voltage level of a corresponding sub-data signal. | 06-27-2013 |
Patent application number | Description | Published |
20090108323 | Method of forming nonvolatile memory device having floating gate and related device - A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region. | 04-30-2009 |
20110101437 | METHOD OF FORMING NONVOLATILE MEMORY DEVICE HAVING FLOATING GATE AND RELATED DEVICE - A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region. | 05-05-2011 |
20110133063 | Optical waveguide and coupler apparatus and method of manufacturing the same - Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die. | 06-09-2011 |
20110260234 | NON-VOLATILE MEMORY DEVICE - A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure. | 10-27-2011 |
20130143463 | MANUFACTURING METHOD OF DISPLAY PANEL - A manufacturing method for a display panel includes: forming a first display panel including a plurality of pixel electrodes, gate lines and data lines connected to the pixel electrodes, a first pad unit connected to the gate lines, and a second pad unit connected to the data lines; forming a second display panel including a common electrode; forming a first short point connected to the first pad unit; forming a second short point connected to the second pad unit; adhering the first display panel and the second display panel; dividing the second display panel into a plurality of regions insulated from each other, a first region corresponding to the first short point, a second region corresponding to the second short point, and a third region; and applying a first voltage to the first region, a second voltage to the second region, and a third voltage to the third region. | 06-06-2013 |
20130194536 | LIQUID CRYSTAL DISPLAY - A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch. | 08-01-2013 |
20150234240 | LIQUID CRYSTAL DISPLAY - A liquid crystal display is provided. A liquid crystal display includes: a first substrate; a thin film transistor disposed on the first substrate; and a first electrode disposed on the thin film transistor and connected to an output terminal of the thin film transistor, wherein the first electrode includes a first region and a second region each including a plurality of minute branches separated from each other by open parts, portions of at least two minute branches among the plurality of minute branches are connected to form a plurality of minute plate branches, and wherein the minute plate branch has a wider width than a minute branch. | 08-20-2015 |
Patent application number | Description | Published |
20090111003 | CAN TYPE SECONDARY BATTERY AND METHOD OF MANUFACTURING CIRCUIT BOARD FOR THE SECONDARY BATTERY - A can type secondary battery and a method of manufacturing a circuit board for the secondary battery that improves reliability by providing a consistent breakdown pressure of the circuit board used in the can type secondary battery. The can type secondary battery includes an electrode assembly, a can to house the electrode assembly and a cap assembly combined with the can. The cap assembly includes a circuit board, which includes fiber layers and is broken by a safety vent when an internal pressure of the can is increased. A woven direction of the fiber layers is inclined with respect to a length direction of the circuit board. Distribution of the breakdown pressure among the circuit boards is decreased, and thus the circuit boards are broken under a consistent pressure, thereby improving the reliability of the can type secondary battery. | 04-30-2009 |
20090130544 | CYLINDRICAL LITHIUM ION SECONDARY BATTERY HAVING FUNCTIONAL CENTER PIN - A lithium ion secondary battery including an electrode assembly, a center pin positioned within the electrode assembly, a variable-length member coupled to the center pin, the variable-length member adapted to increase in length when an interior temperature of the center pin reaches a critical temperature, a can containing the electrode assembly, the center pin, and the variable-length member, and a cap assembly coupled to the can, the cap assembly having safety means fracturable in response to the variable-length member being increased in length. | 05-21-2009 |
20090246605 | Lithium Rechargeable Battery - Lithium rechargeable batteries having functional center pins are provided. A lithium rechargeable battery has a center pin whose top and bottom ends are blocked by a thermal cut-off composition to reduce the void volume inside a bare cell during initial overcharge. The thermal cut-off composition melts at a temperature within a specific temperature range, e.g. between about 80 and about 250° C. This prevents the battery from exploding and igniting. Thus, the inventive lithium rechargeable batteries have improved thermal stability. | 10-01-2009 |
20110091748 | CYLINDRICAL LITHIUM ION SECONDARY BATTERY - A cylindrical lithium ion secondary battery includes an electrode assembly; a center pin positioned within the electrode assembly and having upper and lower ends that are closed; a can containing the electrode assembly and the center pin; and a cap assembly coupled to the top of the can. The center pin can include a body extending a predetermined length with its upper and lower end open and at least one closure member adapted to close the upper and lower ends of the body and to melt or fracture at a predetermined temperature. The center pin body may also or alternatively include a circuit member positioned inside the center pin and adapted to be short-circuited in the case of overcharging and to consume current. | 04-21-2011 |
20140193699 | ELECTRODE ASSEMBLY AND SECONDARY BATTERY HAVING THE SAME - An electrode assembly and a secondary battery having the same improve efficiency and stability of the secondary battery. The electrode assembly includes: a positive electrode plate having a positive electrode collector on which a positive electrode coating portion and a positive electrode non-coating portion are formed; a negative electrode plate having a negative electrode collector on which a negative electrode coating portion and a negative electrode non-coating portion are formed; a separator disposed between the positive electrode plate and the negative electrode plate; and an insulating member disposed on one side of the positive or negative electrode non-coating portion, and formed adjacent to at least one of the ends of the positive electrode coating portion and/or at least one of the end of the negative electrode coating portion. The electrode assembly at least prevents damage to a separator generated due to non-uniformity of the ends of the electrode coating portion. | 07-10-2014 |