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Hyung-Woo
Hyung-Woo Chung, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110284939 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS OF FABRICATING THE SAME - A semiconductor memory device includes a first pair of pillars extending from a substrate to form vertical channel regions, the first pair of pillars having a first pillar and a second pillar adjacent to each other, the first pillar and the second pillar arranged in a first direction, a first bit line disposed on a bottom surface of a first trench formed between the first pair of pillars, the first bit line extending in a second direction that is substantially perpendicular to the first direction, a first contact gate disposed on a first surface of the first pillar with a first gate insulating layer therebetween, a second contact gate disposed on a first surface of the second pillar with a second gate insulating layer therebetween, the first surface of the first pillar and the first surface of the second pillar face opposite directions, and a first word line disposed on the first contact gate and a second word line disposed on the second contact gate, the word lines extending in the first direction. | 11-24-2011 |
Hyung-Woo Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100054054 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a plurality of word lines and a plurality of pairs of bit lines and complementary bit lines that cross the plurality of word lines. A plurality of memory cells is disposed at regions where the word lines and the pairs of bit lines and complementary bit lines cross each other. A voltage control unit includes a plurality of elements connected in parallel, each of which is connected to a power voltage source and is switched on/off based on a control signal that controls an operation of the plurality of memory cells. The voltage control unit controls the voltage of the power voltage source to a predetermined level, thus obtaining a controlled voltage to be applied to the memory cells. | 03-04-2010 |
Hyung-Woo Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110259236 | WHEEL-TYPE ULTRA HIGH SPEED RAILWAY SYSTEM - The wheel-type high-speed railway system includes rails provided on a railroad track and configured such that wheels provided in a bogie of a vehicle come into contact with them, a support provided on a tread surface of a railroad track between the rails, a repulsive Linear Synchronous Motor (LSM) provided between the bogie and the support and configured to improve traveling performance by reducing axle load in a high-speed region, first and second steel plates mounted on both sides of the support in inclined positions, and first and second attractive Dynamic Motion Control (DMC) magnets mounted on the bogie of the vehicle in inclined positions to correspond to the first and second steel plates, and configured to generate attractive force. | 10-27-2011 |
| 20110283914 | VACUUM DIVISION MANAGEMENT SYSTEM OF TUBE RAILWAY SYSTEM AND VACUUM BARRIER FILM DEVICE - Provided is a tube railway system that minimizes noise and air resistance using a sealed evacuated tube as a passage for a tube railway., thereby allowing a train to run at a very high speed. More particularly, provided is a vacuum division management system and vacuum blocking screen device for a tube railway system required to maintain vacuum (1/3 to 1/1000 of atmospheric pressure), in which the vacuum blocking screen device serves to rapidly block a passage for a tube railway with an operation signal, is installed in every fixed section or in some designated sections of the tube railway, and is driven in a specific section where problems with maintenance of the vacuum occur, where the vacuum is intentionally released, for instance, due to maintenance, or where a train is urgently stopped, thereby allowing the specific section to be isolated from the other sections and to be managed with a degree of vacuum different from those of the other sections. | 11-24-2011 |