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| 20080220490 | Method for Improving Organisms Using Flux Scanning Based on Enforced Objective Flux - The present invention relates to a method for improving useful substance-producing organisms using metabolic flux analysis, and more particularly to a method for improving a host organism producing a useful substance, the method comprising: calculating a maximum flux value corresponding to the theoretical maximum yield of the useful substance in the metabolic network model of the host organism for producing useful substance, and calculating the optimum value of metabolic flux associated with useful substance production in the metabolic network when the value of cell growth-associated metabolic flux is the maximum under the condition where fermentation data are applied or not applied; selecting metabolic fluxes whose absolute values increase from the range between the maximum value and the optimum value; screening genes associated with the selected metabolic fluxes; and introducing and/or amplifying the selected genes in the host organism. According to the invention, the production of the useful substance can be effectively improved by selecting metabolic fluxes to be amplified and genes involved in the metabolic fluxes from the range between the optimum value and maximum value of production-associated metabolic flux in the host organism for producing the useful substance, whose genome-level metabolic network model is constructed, and introducing and/or amplifying the selected genes in the organism. | 09-11-2008 |
| 20090298070 | METHOD FOR ANALYZING METABOLITES FLUX USING CONVERGING RATIO DETERMINANT AND SPLIT RATIO DETERMINANT - The present invention relates to a method for analyzing metabolic flux using CRD and SRD. Specifically, the method comprising: selecting a specific target organism, constructing the metabolic network model of the selected organism, identifying the correlations between specific metabolic fluxes in the metabolic network model, defining the correlation ratios as CRD and SRD, determining the correlation ratios of the metabolic fluxes through the experiment for measuring metabolic flux ratios, modifying a stoichiometric matrix with the determined CRD, SRD and correlation ratios, and applying the modified stoichiometric matrix of the metabolic network model for linear programming. According to the inventice method, the correlation between influent/effluent metabolic fluxes with respect to specific metabolites in target organisms (including | 12-03-2009 |
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| 20100066650 | Liquid crystal display device including touch panel - A liquid crystal display device in which a touch panel is embedded in a liquid crystal panel, which reduces the number of processes and eases assembly. The liquid crystal display device includes first and second substrates opposite each other, a thin film transistor array formed on the first substrate, a touch sensing part formed on the second substrate including a plurality of transparent X electrodes, a plurality of transparent Y electrodes orthogonally intersecting each other and a first transparent insulating film between the X electrodes and the Y electrodes, a color filter array formed on the touch sensing part, and a liquid crystal layer formed between the thin film transistor array and the color filter array. | 03-18-2010 |
| 20100066702 | Liquid crystal display device and method of manufacturing thereof - A liquid crystal display device includes: a liquid crystal panel including first and second substrates facing each other and a liquid crystal layer between the first and second substrates, each of the first and second substrates defining a central display region and a peripheral non-display region; a cover glass integrated touch sensor on the liquid crystal panel, the touch sensor including a plurality of transparent first electrodes and second electrodes formed on a surface of the cover glass facing the liquid crystal panel, wherein the first electrodes and second electrodes cross each other; and a touch signal applicator at a side of the cover glass away from the display region of the liquid crystal panel. | 03-18-2010 |
| 20120105350 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THEREOF - A liquid crystal display device includes: a liquid crystal panel including first and second substrates facing each other and a liquid crystal layer between the first and second substrates, each of the first and second substrates defining a central display region and a peripheral non-display regions; a cover glass integrated touch sensor on the liquid crystal panel, the touch sensor including a plurality of transparent first electrodes and second electrodes formed on a surface of the cover glass facing the liquid crystal panel, wherein the first electrodes and second electrodes cross each other; and a touch signal applicator at a side of the cover glass away from the display region of the liquid crystal panel. | 05-03-2012 |
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| 20110121399 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE HAVING METAL GATE STACK STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate. | 05-26-2011 |
| 20110180879 | CMOS TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND SEMICONDUCTOR MODULE INCLUDING THE DEVICE - Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module. | 07-28-2011 |
| 20110237062 | Semiconductor Device And Method Of Fabricating The Same - A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; fondling a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening. | 09-29-2011 |
| 20120122309 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING A WORK FUNCTION CONTROL FILM - A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench; forming a mask pattern on the work function control film formed in the second region; injecting a work function control material into the work function control film formed in the first region to control a work function of the work function control film formed in the first region; removing the mask pattern; and forming a first metal gate electrode to fill the first trench and forming a second metal gate electrode to fill the second trench. | 05-17-2012 |
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| 20100072556 | Semiconductor device and associated methods - A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. | 03-25-2010 |
| 20100099245 | Methods of Forming Semiconductor Devices - Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. | 04-22-2010 |
| 20100099269 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product. | 04-22-2010 |
| 20100124805 | METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFERENT WORK FUNCTIONS USING NITRIDATION - A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer. A first gate and a second gate having different work functions are respectively formed in the first region and the second region by etching the gate electrode layer and the gate insulating layer | 05-20-2010 |
| 20100164009 | Method of manufacturing dual gate semiconductor device - The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities. | 07-01-2010 |
| 20100203716 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 08-12-2010 |
| 20110217833 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING AN ETCHANT - In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved. | 09-08-2011 |
| 20110223758 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 09-15-2011 |
| 20120009746 | METHODS OF FORMING A SEMICONDUCTOR DEVICE - A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. | 01-12-2012 |
| 20120012942 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product. | 01-19-2012 |
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| 20090310045 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - A liquid crystal display device includes first and second substrates facing and spaced apart from each other, each of the first and second substrates having a first sub-pixel region, a second sub-pixel region, a third sub-pixel region, a fourth sub-pixel region and a fifth sub-pixel region for adjusting a viewing angle, the first, second, third and fourth sub-pixel regions surrounding the fifth sub-pixel region; a liquid crystal layer between the first and second substrates; a plurality of first pixel electrodes in each of the first, second, third and fourth sub-pixel regions on the first substrate; a plurality of first common electrodes in each of the first, second, third and fourth sub-pixel regions on the first substrate, the plurality of first common electrodes alternating with the plurality of first pixel electrodes; a second pixel electrode in the fifth sub-pixel region on the first substrate; and a second common electrode in the fifth sub-pixel region on the second substrate, the second common electrode facing the second pixel electrode. | 12-17-2009 |
| 20100141569 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - A liquid crystal display device includes first and second substrates facing each other, a layer of liquid crystal molecules interposed between the first and second substrates, a plurality of color displaying sub-pixels including first, second and third sub-pixels defined on the first and second substrates, first common electrodes in the first, second and third sub-pixels on the first substrate, first pixel electrodes in the first, second and third sub-pixels on the first substrate and alternately arranged with the first common electrodes, color filter layers in the first, second and third sub-pixels on the second substrate, a plurality of viewing angle restricting sub-pixels including fourth, fifth and sixth sub-pixels defined on the first and second substrates, the fourth, fifth and sixth sub-pixels corresponding one-to-one with the first, second and third sub-pixels, second pixel electrodes in the fourth, fifth and sixth sub-pixels on the first substrate, and second common electrodes in the fourth, fifth and sixth sub-pixels on the second substrate. | 06-10-2010 |
| 20120094569 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided are an LCD device that can control a viewing angle freely and a manufacturing method thereof. The LCD device includes a first substrate, a second substrate, and an LC layer interposed between the first and second substrates. The LCD device further includes red, green, blue, and viewing angle controlling subpixels. These subpixels are driven in a VA mode. The red, green, and blue subpixels have a transflective structure. The viewing angle controlling subpixel has a transmissive or transflective structure. | 04-19-2012 |
