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Hyung, KR
Kyung Hee Hyung, Sungam KR
| Patent application number | Description | Published |
|---|---|---|
| 20100021830 | Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods - An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3. | 01-28-2010 |
Kyung Hee Hyung, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110097672 | Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer - An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification. | 04-28-2011 |
Kyung-Hee Hyung, Uiwang-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090122239 | Color Filter Ink Composition, Method for Making Color Filter, and Color Filter Produced by the Same - The present invention relates to a color filter ink composition including an acryl-based resin, a polymerizable monomer, a pigment, a leveling agent, and a solvent. The pigment is represented by the following Chemical Formula 1, and the leveling agent is a polymer including a repeating unit including at least one of the following Chemical Formula 2, Chemical Formula 3, or combinations thereof. | 05-14-2009 |
Nam-Taek Hyung, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080298182 | METHOD AND APPARATUS TO DETECT LAND/GROOVE SWITCH POSITION IN SEEK MODE, AND OPTICAL DISK DRIVE USING THE SAME - A land/groove switch position detecting method includes measuring information about a land/groove switch generation timing of a disc, using a first signal having a frequency that varies in proportion to a rotation speed of the disk in a normal playback mode, and a second signal having a predetermined frequency higher than the frequency of the first signal, and calculating a predicted land/groove switch generation position in the seek mode, using the information about the land/groove switch generation timing. | 12-04-2008 |
Yongtaek Hyung, Changwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100010513 | POROUS MATERIAL HAVING HIERARCHICAL POROUS STRUCTURE AND PREPARATION METHOD THEREOF - Disclosed are porous ceramic balls with a hierarchical porous structure ranging in size from nanometers to micrometers, and preparation methods thereof. Self-assembly polymers and sol-gel reactions are used to prepare porous ceramic balls in which pores ranging in size from ones of nanometers to tens of micrometers are hierarchically interconnected to one another. This hierarchical porous structure ensures high specific surface areas and porosities for the porous ceramic balls. Further, the size and distribution of the pores can be simply controlled with hydrophobic solvent and reaction time. The pore formation through polymer self-assembly and sol-gel reactions can be applied to ceramic and transition metals. Porous structures based on bioceramic materials, such as bioactive glass, allow the formation of apatite therein and thus can be used as biomaterials of bioengineering, including bone fillers, bone reconstruction materials, bone scaffolds, etc. | 01-14-2010 |
Yong-Woo Hyung, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080200014 | METHOD OF FORMING A VERTICAL DIODE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a vertical diode and a method of manufacturing a semiconductor device (e.g., a semiconductor memory device such as a phase-change memory device) includes forming an insulating structure having an opening on a substrate and filling the opening with an amorphous silicon layer. A metal silicide layer is formed to contact at least a portion of the amorphous silicon layer and a polysilicon layer is then formed in the opening by crystallizing the amorphous silicon layer using the metal silicide layer. A doped polysilicon layer is formed by implanting impurities into the polysilicon layer. Thus, the polysilicon layer is formed in the opening without performing a selective epitaxial growth (SEG) process, so that electrical characteristics of the diode may be improved. | 08-21-2008 |
| 20080286957 | METHOD FORMING EPITAXIAL SILICON STRUCTURE - A method of forming an epitaxial silicon structure is disclosed. The method includes performing a first epitaxial growth process using a first source gas including silicon (Si) and hydrogen chloride (HCl) to form a first epitaxial silicon layer on a substrate, and performing a second epitaxial growth process using a second source gas including silicon (Si) and chlorine (Cl) to form a second epitaxial silicon layer on the first epitaxial silicon layer. | 11-20-2008 |
| 20080296644 | CMOS IMAGE SENSORS AND METHODS OF FABRICATING SAME - A CMOS image sensor includes an image transfer transistor therein. This image transfer transistor includes a semiconductor channel region of first conductivity type and an electrically conductive gate on the semiconductor channel region. A gate insulating region is also provided. The gate insulating region extends between the semiconductor channel region and the electrically conductive gate. The gate insulating region includes a nitridated insulating layer extending to an interface with the electrically conductive gate and a substantially nitrogen-free insulating layer extending to an interface with the semiconductor channel region. The nitridated insulating layer may be a silicon oxynitride (SiON) layer. | 12-04-2008 |
| 20080305572 | METHOD OF FABRICATING IMAGE DEVICE HAVING CAPACITOR AND IMAGE DEVICE FABRICATED THEREBY - There are provided a method of fabricating an image device having a capacitor and an image device fabricated thereby. The method comprises preparing a substrate having a pixel region and a peripheral circuit region. A lower electrode containing silicon is formed on the substrate of the peripheral circuit region. A capacitor dielectric layer is formed by sequentially stacking a first dielectric layer and a second dielectric layer on the lower electrode, and the first dielectric layer and the second dielectric layer have a different dielectric constant from each other. In this case, one of the first and second dielectric layers is a dielectric layer grown from a material layer formed thereunder and has a lower dielectric constant than that of the other. An upper electrode is formed on the capacitor dielectric layer. | 12-11-2008 |
| 20100323489 | Method of forming a vertical diode and method of manufacturing a semiconductor device using the same - A method of forming a vertical diode and a method of manufacturing a semiconductor device (e.g., a semiconductor memory device such as a phase-change memory device) includes forming an insulating structure having an opening on a substrate and filling the opening with an amorphous silicon layer. A metal silicide layer is formed to contact at least a portion of the amorphous silicon layer and a polysilicon layer is then formed in the opening by crystallizing the amorphous silicon layer using the metal silicide layer. A doped polysilicon layer is formed by implanting impurities into the polysilicon layer. Thus, the polysilicon layer is formed in the opening without performing a selective epitaxial growth (SEG) process, so that electrical characteristics of the diode may be improved. | 12-23-2010 |
Yooeup Hyung, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090317712 | RECHARGEABLE BATTERY AND MANUFACTURING METHOD THEREOF - A rechargeable battery is provided. The rechargeable battery comprises an electrode assembly, a case housing the electrode assembly, at least one lead tab accommodated in the case to electrically connect the electrode assembly to the case, and a welded joint joining the lead tab to the case. In the rechargeable battery, the case is connected to the lead tab without producing any spatter within the case. The welded joint extends from an outer bottom surface of the case to the lead tab. Further provided is a method for manufacturing the rechargeable battery. | 12-24-2009 |
Yoo-Eup Hyung, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090111011 | ELECTRODE ASSEMBLY AND SECONDARY BATTERY HAVING THE SAME - An electrode assembly and a secondary battery having the same improve efficiency and stability of the secondary battery. The electrode assembly includes: a positive electrode plate having a positive electrode collector on which a positive electrode coating portion and a positive electrode non-coating portion are formed; a negative electrode plate having a negative electrode collector on which a negative electrode coating portion and a negative electrode non-coating portion are formed; a separator disposed between the positive electrode plate and the negative electrode plate; and an insulating member disposed on one side of the positive or negative electrode non-coating portion, and formed adjacent to at least one of the ends of the positive electrode coating portion and/or at least one of the end of the negative electrode coating portion. The electrode assembly at least prevents damage to a separator generated due to non-uniformity of the ends of the electrode coating portion. | 04-30-2009 |
| 20100255364 | RECHARGEABLE BATTERY - A rechargeable battery configured to prevent or substantially prevent explosion resulting from overheating. In one embodiment, a rechargeable battery includes: a first metallic plate; a second metallic plate coupled to the first metallic plate to together include five sides of a hexahedron and define a cavity and an opening to the cavity being a sixth side of the hexahedron, at least one of the first metallic plate or the second metallic plate including a base and walls extending from at least two opposing peripheral sides of the base; a generation member in the cavity and including at least one connection member at a side of the generation member proximate the opening; and a cap assembly including an insulator and at least one electrode lead coupled to the at least one connection member, the cap assembly closing the opening. | 10-07-2010 |