| Patent application number | Description | Published |
|---|
| 20080308844 | Spin Transistor Using Perpendicular Magnetization - A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate. | 12-18-2008 |
| 20090152554 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 06-18-2009 |
| 20090152606 | Spin Transistor Using Epitaxial Ferromagnet-Semiconductor Junction - A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer. | 06-18-2009 |
| 20090174690 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME - A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon. | 07-09-2009 |
| 20100027330 | MAGNETIC MEMORY DEVICE AND METHOD FOR READING MAGNETIC MEMORY CELL USING SPIN HALL EFFECT - A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect. | 02-04-2010 |
| 20100051957 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer. | 03-04-2010 |
| 20100084633 | SPIN TRANSISTOR USING DOUBLE CARRIER SUPPLY LAYER STRUCTURE - A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer. | 04-08-2010 |
| 20110042648 | RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION - A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns. | 02-24-2011 |
| 20110057194 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer. | 03-10-2011 |
| 20110133198 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 06-09-2011 |
