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Hyung-Gon

Hyung-Gon Kim, Seoul KR

Patent application number	Description	Published
20080291734	NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE WORDLINE VOLTAGE OF THE SAME - A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.	11-27-2008
20090080251	NAND FLASH MEMORY DEVICES AND METHODS OF LSB/MSB PROGRAMMING THE SAME - Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.	03-26-2009
20100001677	SYSTEM AND METHOD FOR DETERMINING AIR PURIFIER FILTER CHANGE TIME USING MEASUREMENT OF MOTOR SPEED - A system and method for changing a filter provided in an air purifier at an optimum time by measuring the rotational speed of a motor that operates the filter. The system for determining an air purifier filter change time includes: a motor speed measurement unit configured to measure the rotational speed of a motor that operates a filter provided in the air purifier; a time counting unit configured to count time starting from a point when the motor starts rotating upon receiving power supplied thereto or from a point when the power supplied to the motor is cut off; a speed determination unit configured to check whether or not the rotational speed of the motor has reached a pre-set speed; a time comparison unit configured to receive information about recorded motor running time from the time counting unit and comparing the counted time to a pre-set time duration, if the speed determination unit determines that the rotational speed of the motor has reached the pre-set speed; and a filter change time determination unit configured to check whether or not a filter change is required according to results obtained by comparing the time duration during which the rotational speed of the motor reached the pre-set speed with the pre-set time duration.	01-07-2010
20110075493	NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE WORDLINE VOLTAGE OF THE SAME - A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.	03-31-2011

Hyung-Gon Kim, Suwon-Si KR

Patent application number	Description	Published
20090296467	NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME - Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.	12-03-2009
20100149877	FLASH MEMORY DEVICE AND READ METHOD - A flash memory device includes a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation, and a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.	06-17-2010

Hyung-Gon Kim, Suwon-Si, Gyeonggi-Do KR

Patent application number	Description	Published
20090262576	FLASH MEMORY DEVICE AND OPERATING METHOD OF FLASH MEMORY DEVICE - Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.	10-22-2009

Hyung-Gon Kim, Hwaseong-Si KR

Patent application number	Description	Published
20110267899	NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY SYSTEM HAVING THE SAME - A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.	11-03-2011