| Patent application number | Description | Published |
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| 20080251781 | Nitride semiconductor light emitting device - There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack. | 10-16-2008 |
| 20090173965 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD - There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively. | 07-09-2009 |
| 20110121259 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 05-26-2011 |
| 20110198667 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 08-18-2011 |
| 20120009697 | CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME - A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed. | 01-12-2012 |
| 20120104432 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked. | 05-03-2012 |
| 20120168769 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY - There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer. | 07-05-2012 |
| 20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 10-18-2012 |
| 20120326121 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 12-27-2012 |
| 20130009192 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration. | 01-10-2013 |
| Patent application number | Description | Published |
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| 20100073730 | DATA TRANSMITTING METHOD OF IMAGE FORMING APPARATUS AND IMAGE FORMING APPARATUS FOR PERFORMING DATA TRANSMITTING METHOD - A method of transmitting data from an image forming apparatus, the method including: receiving identification information of a destination of the data; determining whether to transmit the data to the destination corresponding to the received identification information based on a security policy of the image forming apparatus; and transmitting the data to the destination in response to the destination being determined to be a destination to where the data is allowed to be transmitted, based on the security policy. | 03-25-2010 |
| 20100085596 | METHOD OF ATTACHING AND SENDING FILE THROUGH WEBMAIL FROM IMAGE FORMING APPARATUS, AND IMAGE FORMING APPARATUS TO PERFORM THE METHOD - An image forming apparatus which logs into an external webmail server by using a web browser included in the image forming apparatus, the webmail is written on a webpage of the webmail server, a file to be attached to the webmail is selected, and the selected file is attached to the webmail so as to send the webmail to the webmail server. | 04-08-2010 |
| 20110080609 | IMAGE FORMING APPARATUS TO SUPPORT WIRED AND WIRELESS NETWORK INTERFACES AND NETWORK CONNECTION METHOD OF THE IMAGE FORMING APPARATUS - A network connection method of an image forming apparatus to support wired and wireless network interfaces includes receiving a destination address, attempting to connect to a destination corresponding to the destination address by using each of the wired and wireless network interfaces, determining a network interface connectable to the destination, according to a result of the attempt, and transmitting data to the destination by using the connectable network interface. | 04-07-2011 |
| 20110125806 | METHOD OF MANAGING FILES IN WEBDAV SERVER-EMBEDDED IMAGE FORMING APPARATUS, AND IMAGE FORMING SYSTEM THAT PERFORMS THE METHOD - A method of managing files in a Web-based Distributed Authoring and Versioning (WebDAV)-embedded image forming apparatus and an image forming apparatus that performs the method. The method includes receiving a connection request from the WebDAV client to manage at least one of a file and a directory stored in a storage unit of the image forming apparatus; receiving login information from the WebDAV client, authenticating the received login information of the WebDAV client, receiving a WebDAV command to control the at least one of the file and the directory from the authenticated WebDAV client, and executing a process with respect to the at least one of the file and the directory with reference to the received WebDAV command. | 05-26-2011 |
| 20130057908 | IMAGE FORMING APPARATUS SUPPORTING PEER-TO-PEER CONNECTION AND METHOD OF MANAGING ADDRESS BOOK THEREOF - A method of managing an address book of an image forming apparatus that supports a peer-to-peer (P2P) connection includes connecting the image forming apparatus to an external wireless device in the P2P connection method through a wireless local area network (WLAN); operating a soft access point (AP) module of the image forming apparatus so that the image forming apparatus operates as an AP; allocating an internet protocol (IP) address to the wireless device by driving a dynamic host configuration protocol (DHCP) server unit (DHCP server) of the image forming apparatus; and registering the wireless device connected to the image forming apparatus in the address book, which stores wireless devices that are connectable to the image forming apparatus, with the allocated IP address. | 03-07-2013 |
| 20130057912 | IMAGE FORMING APPARATUS SUPPORTING PEER-TO-PEER CONNECTION AND METHOD OF CONTROLLING PEER-TO-PEER CONNECTION THEREOF - A method of controlling a peer-to-peer (P2P) connection of an image forming apparatus that supports the P2P connection includes: receiving in the image forming apparatus a P2P connection request from an external wireless device; checking a device type of the wireless device by the image forming apparatus; determining whether the device type corresponds to connection restricted device types; and when the device type is the connection restricted device type, blocking a P2P connection to the wireless device by the image forming apparatus, and when the device type is not the connection restricted device type, P2P connecting the image forming apparatus to the wireless device. | 03-07-2013 |
| 20130088749 | METHOD AND APPARATUS TO CONTROL LINK SPEED OF AN IMAGE FORMING APPARATUS - A method of controlling a link speed in an image forming apparatus to reduce power consumption of the image forming apparatus by changing the link speed of the image forming apparatus, the method including establishing a link between the image forming apparatus and an external device in a normal mode of the image forming apparatus, determining whether a network environment of the image forming apparatus, which is reconfigured by changing a speed of the established link, satisfies at least one predetermined condition, and disabling a function of changing the speed of the established link in a sleep mode of the image forming apparatus, based on a result of the determining. | 04-11-2013 |
