| Patent application number | Description | Published |
|---|
| 20090243117 | CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME - A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern. | 10-01-2009 |
| 20100051896 | VARIABLE RESISTANCE MEMORY DEVICE USING A CHANNEL-SHAPED VARIABLE RESISTANCE PATTERN - A variable resistance memory device includes a substrate and a plurality of spaced apart lower electrodes on the substrate. The device further includes a variable resistance material pattern comprising two vertically opposed wall members connected by a bottom member disposed on and electrically connected to at least one of the plurality of lower electrodes and an upper electrode on the variable resistance material pattern. An area of contact of the variable resistance material pattern with the at least one lower electrode may be rectangular, circular, ring-shaped, or arc-shaped. Fabrication methods are also described. | 03-04-2010 |
| 20100124800 | VARIABLE RESISTANCE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME - A method of fabricating a variable resistance memory device includes a plasma etching process to remove contaminants from variable resistance material that forms variable resistance elements of the device. Bottom electrodes are formed on a semiconductor substrate. Next, an interlayer dielectric layer having trenches that expose the bottom electrodes is formed on the substrate. Then a layer of variable resistance material is formed. The variable resistance material covers the interlayer dielectric layer and fills the trenches. The variable resistance material is then planarized down to at least the top surface of the interlayer dielectric layer, thereby leaving elements of the variable resistance material in the trenches. The variable resistance material in the trenches is etched to remove contaminants, produced as a result of the planarizing process, from atop the variable resistance material in the trenches. A top electrode is then formed on the variable resistance material. | 05-20-2010 |
| 20100144135 | Method of manufacturing a phase changeable memory unit - A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer. | 06-10-2010 |
| 20100176365 | RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench | 07-15-2010 |
| 20100181605 | DATA STORAGE DEVICE HAVING SELF-POWERED SEMICONDUCTOR DEVICE - Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes. | 07-22-2010 |
| 20100230281 | THIN FILM FORMING APPARATUS - Provided are a thin film forming apparatus and a thin film forming method. The thin film forming apparatus comprises a first electrode provided for etching a thin film formed on the substrate, a second electrode provided for forming a plasma in the internal space, a third electrode provided for focusing the plasma, and a control unit controlling a voltage to be applied to the first through third electrodes. | 09-16-2010 |
| 20110147692 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FORMING THE SAME - Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode. | 06-23-2011 |
