| Patent application number | Description | Published |
|---|
| 20080199991 | STACKED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION - A stacked semiconductor device comprises a lower transistor formed on a semiconductor substrate, a lower interlevel insulation film formed on the semiconductor substrate over the lower transistor, an upper transistor formed on the lower interlayer insulation film over the lower transistor, and an upper interlevel insulation film formed on the lower interlevel insulation film over the upper transistor. The stacked semiconductor device further comprises a contact plug connected between a drain or source region of the lower transistor and a source or drain region of the upper transistor, and an extension layer connected to a lateral face of the source or drain region of the upper transistor to enlarge an area of contact between the source or drain region of the upper transistor and a side of the contact plug. | 08-21-2008 |
| 20080211038 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes forming a preliminary gate pattern on a semiconductor substrate. The preliminary gate pattern includes a gate oxide pattern, a conductive pattern, and a sacrificial insulating pattern. The method further includes forming spacers on opposite sidewalls of the preliminary gate pattern, forming an interlayer dielectric pattern to expose the sacrificial insulating pattern, removing the sacrificial insulating pattern to form an opening to expose the conductive pattern, transforming the conductive pattern into a metal silicide layer and forming a metal barrier pattern along an inner profile of the opening and a metal conductive pattern to fill the opening including the metal barrier pattern. The metal silicide layer and the metal conductive pattern constitute a gate electrode. | 09-04-2008 |
| 20090026618 | Semiconductor device including interlayer interconnecting structures and methods of forming the same - In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening. | 01-29-2009 |
| 20090138198 | APPARATUS AND METHOD FOR SHARING THE LANDMARK INFORMATION OF THE LOCATION SERVICE USING A JAVA RECORD MANAGEMENT SYSTEM IN A WIRELESS COMMUNICATION TERMINAL - A method and an apparatus for sharing landmark information of a location service in a wireless communication terminal are provided. The method includes obtaining location information in a JAVA application and storing the landmark information based the location information using a backup database format in a file system region. | 05-28-2009 |
| 20090143011 | METHOD AND APPARATUS FOR IDENTIFYING JAVA PUSH REQUEST EQUIPMENTS USING BLUETOOTH IN A MOBILE COMMUNICATION TERMINAL - Provided are an identifying method and an apparatus for identifying a plurality of JAVA™ PUSH request terminals using Bluetooth® communication in a mobile communication terminal. According to the method, acquiring information records for performing JAVA™ PUSH about a plurality of terminals by requesting a service search through a Logical Link Control and Adaption Protocol (L2CAP) connection between the mobile communication terminal and the plurality of JAVA™ PUSH request terminals and displaying unique identification information of the plurality of JAVA™ PUSH request terminals by checking the information records of the plurality of JAVA™ PUSH request terminals. | 06-04-2009 |
| 20090152511 | INDIUM TIN OXIDE TARGET, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE, AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE - Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm | 06-18-2009 |
| 20090233439 | Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same - A metal organic precursor represented by a formula of R | 09-17-2009 |
| 20110068003 | INDIUM TIN OXIDE TARGET, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE, AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE - Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm | 03-24-2011 |
