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| 20090263978 | LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME - An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization. | 10-22-2009 |
| 20100301325 | OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion. | 12-02-2010 |
| 20110108832 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed are a liquid crystal display device employing an amorphous zinc oxide-based semiconductor as an active layer, and a method for fabricating the same, whereby device stability can be secured by employing an etch stopper structure and device characteristics can be enhanced by minimizing exposure and deterioration of the active layer excluding content regions by virtue of the design of the etching stopper in a shape like “H”. Also, the liquid crystal display device and the fabrication method thereof can further form a semiconductor pattern and an insulating layer pattern on the intersection between the gate line and the data line, so as to compensate a stepped portion, thereby preventing an occurrence of short-circuit. | 05-12-2011 |
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| 20090236592 | LIQUID CRYSTAL DISPLAY DEVICE USING SMALL MOLECULE ORGANIC SEMICONDUCTOR MATERIAL - A liquid crystal display structure is provided. The liquid crystal display structure includes a pixel region and a thin film transistor on the substrate. The thin film transistor is adjacent to the pixel region and includes a gate electrode; a gate insulating layer having a top surface; a source electrode and a drain electrode at the top surface of the gate insulating layer; a semiconductor layer disposed at the top surface of the gate insulating layer, the semiconductor layer between the source electrode and the drain electrode defining a channel region, the semiconductor layer including a small molecule organic semiconductor material; and a first passivation layer covering the channel region, a top surface of the first passivation layer coinciding with or being below a top surface of each of the source electrode and the drain electrode. | 09-24-2009 |
| 20100149629 | Electrophoresis type display device and method of fabricating and driving the same - Provided is a electrophoresis type display device includes a pixel electrode and a common electrode on a substrate and inducing an in-plane electric field; an electric charge layer on the pixel electrode and common electrode and having a plurality of first particles and a plurality of second particles, the first and second particles charged with opposite polarities; and a backlight unit supplying light toward the substrate. | 06-17-2010 |
| 20100267306 | METHOD OF FABRICATING AN LCD DEVICE USING FLEXIBLE SUBSTRATES - A jig for a flexible substrate comprises a glass plate having a concave portion and a plurality of grooves at periphery of the concave portion. The jig further comprises a plurality of fixing elements inserted in the plurality of grooves to fix the flexible substrate to the glass plate. | 10-21-2010 |
| 20110223715 | THIN FILM TRANSISTOR INCLUDING ORGANIC SEMICONDUCTOR LAYER AND SUBSTRATE INCLUDING THE SAME - Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers. | 09-15-2011 |
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| 20090317941 | ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode. | 12-24-2009 |
| 20100093249 | Apparatus for fabricating liquid crystal display panels - A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved. | 04-15-2010 |
| 20100203793 | METHOD AND APPARATUS OF FORMING ALIGNMENT LAYER FOR LIQUID CRYSTAL DISPLAY DEVICE - A method for forming an alignment layer is disclosed, to prevent light leakage generated by a physical contact between a rubbing roll and a substrate, which includes preparing a substrate; coating an alignment material on the substrate, for initial alignment of liquid crystal; applying an electric field or a magnetic field to the alignment material, for determination of alignment direction in the alignment material; and curing the alignment material. | 08-12-2010 |
| 20100210056 | Method of fabricating array substrate - A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, and forming a pixel electrode connected to the drain electrode through the drain contact hole, wherein the active layer has a uniform thickness in the switching region. | 08-19-2010 |
