Patent application number | Description | Published |
20100002491 | RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME - A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide layer that is formed on the first electrode, a solid electrolyte layer that is disposed on the oxide layer, and a second electrode that is disposed on the solid electrolyte layer. The method comprises the step of forming a conductive tip in the oxide layer by applying reference voltage to any one of the electrodes of the resistance RAM, applying foaming voltage to the remain one, such that the oxide layer is electrically broken. A conductive filament is formed in the solid electrolyte layer by applying a positive voltage to the second electrode on the basis of the voltage that is applied to the first electrode. The conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode on the basis of the voltage that is applied to the first electrode. | 01-07-2010 |
20110175052 | RESISTANCE-VARIABLE MEMORY DEVICE INCLUDING CARBIDE-BASED SOLID ELECTROLYTE MEMBRANE AND MANUFACTURING METHOD THEREOF - Disclosed are a resistance-variable memory device including a carbide-based solid electrolyte membrane that has stable memory at a high temperature and a manufacturing method thereof. The resistance-variable memory device includes: a lower electrode, the carbide-based solid electrolyte membrane arranged on the lower electrode, and an upper electrode arranged on the solid electrolyte membrane. In addition, the method for manufacturing the resistance-variable memory device comprises: a step for forming the lower electrode on a substrate, a step for forming the carbide-based solid electrolyte membrane on the lower electrode, and a step for forming the upper electrode on the solid electrolyte membrane. | 07-21-2011 |
20110309322 | RESISTANCE CHANGE MEMORY DEVICE WITH THREE-DIMENSIONAL STRUCTURE, AND DEVICE ARRAY, ELECTRONIC PRODUCT AND MANUFACTURING METHOD THEREFOR - Provided are a resistance change memory device with a three-dimensional structure, a resistance change memory device array, an electronic product, and a manufacturing method therefor. The device array includes a plurality of first directional data lines which are arranged on a substrate in parallel. A conductive pillar is positioned between sidewalls of the first directional data lines, which face each other. A resistance change material film is positioned between the sidewall of the conductive pillar and the sidewall of the data lines that are adjacent to the sidewall of the conductive pillar. | 12-22-2011 |
20130021835 | RESISTIVE RAM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR DRIVING THE SAME - A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide. | 01-24-2013 |
20130026435 | SWITCHING DEVICE AND RESISTANCE CHANGE MEMORY DEVICE USING THE SAME - A switching device that provides bipolar current paths and a resistance change memory device using the switching device. The switching device includes a first electrode, a second electrode, and an amorphous carbon layer interposed between the first electrode and the second electrode and configured to control a bipolar current to flow therethrough in response to a voltage applied between the first electrode and the second electrode. | 01-31-2013 |
20130300509 | FREQUENCY TUNING APPARATUS, OPERATING METHOD THEREOF, AND RF CIRCUIT INCLUDING THE FREQUENCY TUNING APPARATUS - A frequency tuning apparatus may include an oscillator and a memory element connected to the oscillator. The memory element may have a variable resistance. An oscillation frequency of the oscillator may vary according to a resistance state of the memory element. The oscillator may be a ring oscillator. The memory element may be connected to an input terminal or a power terminal of the oscillator. | 11-14-2013 |
20130301338 | HYBRID RESISTIVE MEMORY DEVICES AND METHODS OF OPERATING AND MANUFACTURING THE SAME - Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state. | 11-14-2013 |
20150318041 | RESISTIVE RAM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR DRIVING THE SAME - A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide. | 11-05-2015 |
20150318474 | RESISTIVE RAM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR DRIVING THE SAME - A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide. | 11-05-2015 |