Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Hyun-Sang
Hyun Sang Ahn, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110149098 | IMAGE PROCESSING APPARUTUS AND METHOD FOR VIRTUAL IMPLEMENTATION OF OPTICAL PROPERTIES OF LENS - Provided is an image processing apparatus and method that may virtually implement characteristics of an actual lens. The image processing apparatus includes a first image obtaining unit that obtains a raw image through an image capturing apparatus, a foreground/background separation unit that separates a foreground and a background from the raw image obtained by the first image obtaining unit, a lens selecting unit that selects a lens model, a lens characteristic, or a combination thereof the image capturing apparatus, an image processing unit that performs image processing on the foreground and the background by respectively applying a predetermined calibration value for the lens model, the lens characteristic, or the combination thereof, and a second image obtaining unit that synthesizes the image-processed foreground and background to obtain a processed image. | 06-23-2011 |
Hyun Sang Choi, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20120064330 | PRODUCTION METHOD FOR AN ULTRA-LOW-DIELECTRIC-CONSTANT FILM, AND AN ULTRA-LOW-DIELECTRIC-CONSTANT FILM PRODUCED THEREBY - The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4. | 03-15-2012 |
Hyun Sang Hwang, Gwangju KR
| Patent application number | Description | Published |
|---|---|---|
| 20100002491 | RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME - A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide layer that is formed on the first electrode, a solid electrolyte layer that is disposed on the oxide layer, and a second electrode that is disposed on the solid electrolyte layer. The method comprises the step of forming a conductive tip in the oxide layer by applying reference voltage to any one of the electrodes of the resistance RAM, applying foaming voltage to the remain one, such that the oxide layer is electrically broken. A conductive filament is formed in the solid electrolyte layer by applying a positive voltage to the second electrode on the basis of the voltage that is applied to the first electrode. The conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode on the basis of the voltage that is applied to the first electrode. | 01-07-2010 |
| 20110175052 | RESISTANCE-VARIABLE MEMORY DEVICE INCLUDING CARBIDE-BASED SOLID ELECTROLYTE MEMBRANE AND MANUFACTURING METHOD THEREOF - Disclosed are a resistance-variable memory device including a carbide-based solid electrolyte membrane that has stable memory at a high temperature and a manufacturing method thereof. The resistance-variable memory device includes: a lower electrode, the carbide-based solid electrolyte membrane arranged on the lower electrode, and an upper electrode arranged on the solid electrolyte membrane. In addition, the method for manufacturing the resistance-variable memory device comprises: a step for forming the lower electrode on a substrate, a step for forming the carbide-based solid electrolyte membrane on the lower electrode, and a step for forming the upper electrode on the solid electrolyte membrane. | 07-21-2011 |
| 20110309322 | RESISTANCE CHANGE MEMORY DEVICE WITH THREE-DIMENSIONAL STRUCTURE, AND DEVICE ARRAY, ELECTRONIC PRODUCT AND MANUFACTURING METHOD THEREFOR - Provided are a resistance change memory device with a three-dimensional structure, a resistance change memory device array, an electronic product, and a manufacturing method therefor. The device array includes a plurality of first directional data lines which are arranged on a substrate in parallel. A conductive pillar is positioned between sidewalls of the first directional data lines, which face each other. A resistance change material film is positioned between the sidewall of the conductive pillar and the sidewall of the data lines that are adjacent to the sidewall of the conductive pillar. | 12-22-2011 |
Hyun Sang Yoo, Gwangsan-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20120126680 | Refrigerator and receptacle assembly thereof - A refrigerator including a receptacle provided in a storage chamber of a main body so that the receptacle is moved forward from and backward into the storage chamber, a cover hingedly provided at the receptacle, and an interlocking unit to interlock forward and backward motions of the receptacle and hinged rotation of the cover when the receptacle is moved forward by a predetermined distance. | 05-24-2012 |
Hyun-Sang Cho, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100005356 | Method and apparatus for combining hybrid automatic repeat request data in wireless communication system - A receiving method and apparatus for combining Hybrid Automatic Repeat Request (HARQ) data in a wireless communication system are provided. More particularly, a method and apparatus for increasing HARQ combining capability while effectively using a limited-sized memory are provided. The receiving method for combining the HARQ data includes predicting a maximum size of currently receivable data, converting HARQ data received from a transmitting end into Log Likelihood Ratio (LLR) information, determining whether the received HARQ data is retransmitted data, if the determination result shows that the HARQ data is not the retransmitted data, determining whether the converted LLR information is compressed according to the predicted maximum data size, and storing the converted LLR information in a memory according to the determination result on whether compression is necessary. | 01-07-2010 |
Hyun-Sang Hwang, Gwangju-Si, KR
Hyun-Sang Hwang, Kwangju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090068808 | Method of manufacturing a nonvolatile semiconductor memory device having a gate stack - A nonvolatile semiconductor memory device includes a semiconductor substrate having a source region and a drain region, and a gate stack formed on the semiconductor substrate between and in contact with the source and drain regions. The gate stack includes, in sequential order from the substrate: a tunneling film; a first trapping material film doped with a first predetermined impurity, the first trapping material film having a higher dielectric constant than the nitride film (Si | 03-12-2009 |
Hyun-Sang Park, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090289915 | DISPLAY DEVICE WITH OPTICAL SENSORS - A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units. | 11-26-2009 |
| 20100013788 | TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME - A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector. | 01-21-2010 |
| 20110057902 | TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME - A liquid crystal display panel includes a touch sensor and the touch sensor includes a plurality of x-axis read-out lines, a plurality of y-axis read-out lines crossing the x-axis read-out lines, a plurality of sensor units provided in a plurality of regions defined by the x-axis read-out lines and the y-axis read-out lines. Each sensor unit comprises a reset unit that outputs a sampling voltage based on a reset voltage, a capacitance detector that generates a modified sampling voltage from the sampling voltage based on a variation of a cell gap of the display panel caused by a touch of the display panel, a first output unit that changes an electric potential of a corresponding x-axis read-out line in response to the modified sampling voltage and a second output unit that changes an electric potential of a corresponding y-axis read-out line in response to the modified sampling voltage. | 03-10-2011 |
Hyun-Sang Park, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100183150 | Shared key management method, shared key generating method and message communication method for scada system, and recording medium - A shared key management method for a Supervisory Control And Data Acquisition (SCADA) system in which a master terminal unit (MTU), a plurality of sub master terminal units (SUB-MTUs), and a plurality of remote terminal units (RTUs) are configured in a sequential hierarchy, is provided. The method includes: (a) at the MTU, generating a plurality of secret keys and respectively allocating the secret keys to the RTUs; (b) at the MTU, generating a group key in a tree structure, wherein a leaf node of the tree structure corresponds to each RTU, a parent node of a node corresponding to an RTU corresponds to a SUB-RTU to which the RTU is connected, a shared key of each node of the group key is generated by hashing shared keys of all child nodes, and a shared key of a leaf node of the group key is set as a secret key of the RTU; (c) at the RTU or the SUM-MTU, receiving and storing shared keys of every node from a node corresponding to itself to a root node; (d) when the RTU or the SUM-MTU is added or deleted, at the MTU, generating shared keys of nodes along a path from a node corresponding to the added or deleted terminal unit to the root node again; and (e) at the RTU or the SUB-MTU, receiving and storing the generated shared keys. According to the key management method for the SCADA system described above, in the case of encrypting and broadcasting or multicasting a message, a computation amount can be reduced. | 07-22-2010 |