Patent application number | Description | Published |
20090284152 | PLASMA DISPLAY PANEL - A plasma display panel, including a front substrate and a rear substrate arranged opposite to each other, a plurality of display electrodes disposed in a first direction on a first surface of the front substrate, a dielectric layer covering the display electrodes on the front substrate, a protective layer including protective layer grains covering the dielectric layer, and a crystal modification seed layer disposed between the dielectric layer and the protective layer, wherein the crystal modification seed layer includes crystal modification seeds including at least one of an alkaline earth metal, a transition metal, an amphoteric element, a semimetal element, and a lanthanide. | 11-19-2009 |
20120034749 | METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed. | 02-09-2012 |
20120108023 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity. | 05-03-2012 |
20120135576 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the gate structure, respectively; forming a first semiconductor pattern in the first and second trenches; removing the dummy gate pattern to expose a portion of the channel region; forming a recessed channel region by recessing the portion of the channel region; and forming a second semiconductor pattern in the recessed region. | 05-31-2012 |
20140186593 | RESIN COMPOSITION FOR PRINTED CIRCUIT BOARD, INSULATING FILM, PREPREG, AND PRINTED CIRCUIT BOARD - Disclosed herein are a resin composition for a printed circuit board, an insulating film, a prepreg, and a printed circuit board, the resin composition including: a composite epoxy resin containing a bisphenol A type epoxy resin, a cresol novolac epoxy resin, a rubber-modified epoxy resin, a phosphorus based epoxy resin, and an alkyl sulfonated tetrazole-modified epoxy resin; and a curing agent. The insulating film and the prepreg according to the present invention may have basically low coefficient of thermal expansion, excellent heat resistance, a high glass transition temperature, and excellent adhesion force with the metal. | 07-03-2014 |
20140187677 | SURFACE MODIFIED SILICA BY ALKYL SULFONATED TETRAZOLE COMPOUND, PREPARING METHOD THEREOF, AND RESIN COMPOSITION CONTAINING THE SAME - This invention relates to a surface modified silica by an alkyl sulfonated tetrazole compound, a preparation method thereof, and a resin composition containing the same. The silica according to this invention can exhibit superior adhesion to a metal. | 07-03-2014 |
20150061134 | SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS AND METHODS OF MANUFACTURING THE SAME - A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described. | 03-05-2015 |
20150206956 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate. | 07-23-2015 |