| Patent application number | Description | Published |
|---|
| 20090007052 | Method for Verifying Pattern of Semiconductor Device - Provided is a method for verifying a pattern of a semiconductor device. In the method, a designed layout of target patterns is provided, and transferring the designed layout on a wafer to form wafer patterns. Wafer patterns image contour is obtain. The image contour for wafer patterns on the designed layout are matched, After edge differences between the designed layout and the wafer patterns image contour are extracted, a checking layout for detecting wafer pattern defects is obtain by adding the edge differences on the designed layout. Defects on the checking layout is identified to verify the patterns in view of processes before fabrication of a photomask. | 01-01-2009 |
| 20100279505 | METHOD FOR FABRICATING PATTERNS ON A WAFER THROUGH AN EXPOSURE PROCESS - A method for forming patterns on a wafer includes forming a fence having a sloped face in an edge portion of the wafer. The sloped face is direct to an inside of the wafer. A first photoresist layer is formed which extends to cover the fence on the wafer. First photoresist patterns are formed by performing a first exposure and development on the first photoresist layer. An etch process is performed using the first photoresist patterns and the fence as an etch mask. The fence is formed by selectively exposing a negative resist using a light shielding blade, and at this time, the first photoresist layer is formed including a positive resist. | 11-04-2010 |
| 20100316940 | Photomask for Forming Contact Hole in Semiconductor Device - Disclosed is a photomask for forming a contact hole arranged on a wafer in a zigzag form along a transverse direction, including: a light transmitting substrate; a main pattern disposed on the light transmitting substrate with a zigzag form as an upper main pattern disposed in a relatively upper portion and a lower main pattern disposed in a relatively lower portion are arranged alternately along a transverse direction; a first lower auxiliary pattern extending in a vertical direction and disposed adjacently to a lower portion of the upper main pattern; a first upper auxiliary pattern extending in a vertical direction and disposed adjacently to an upper portion of the lower main pattern; a second lower auxiliary pattern extending in the transverse direction and connecting the first lower auxiliary patterns with each other; and a second upper auxiliary pattern extending in the transverse direction and connecting the first upper auxiliary patterns with each other. | 12-16-2010 |
