Patent application number | Description | Published |
20080278795 | FLEXIBLE ELECTROPHORETIC DISPLAY AND METHOD OF FABRICATING THE SAME - Provided is a flexible electrophoretic display. The flexible electrophoretic display includes a grayscale representation unit for representing grayscales in unit areas using reflection and transmission; upper and lower electrodes for applying a voltage to the grayscale representation unit; and a plurality of colored particles formed on the upper electrode for representing color. The upper electrode is formed of a transparent conductive material. External incident light is reflected by the colored particles formed on the upper electrode for color implementation by the flexible electrophoretic display. Thus, a compact, flexible electrophoretic display capable of displaying a high-definition image with multi-color and multi-gradation can be implemented by using multi-colored particle layers formed of metallic nano-particles. | 11-13-2008 |
20100062555 | METHOD OF FORMING CRYSTALLIZED SILICON AND METHOD OF FABRICATING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY USING THE SAME - A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer. | 03-11-2010 |
20100087051 | LOCAL CRYSTALLIZATION BY HEAT TREATMENT - Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate. | 04-08-2010 |
20100251936 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM - A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method. | 10-07-2010 |
20100258793 | Solution composition for forming oxide thin film and electronic device including the oxide thin film - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 10-14-2010 |
20120080678 | COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF - Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure. | 04-05-2012 |
20120168747 | COMPOSITION FOR OXIDE THIN FILM, PREPARATION METHOD OF THE COMPOSITION, METHODS FOR FORMING THE OXIDE THIN FILM USING THE COMPOSITION, AND ELECTRONIC DEVICE USING THE COMPOSITION - Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound. | 07-05-2012 |
20120313096 | OXIDE SEMICONDUCTOR COMPOSITION AND PREPARATION METHOD THEREOF, METHOD OF FORMING OXIDE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY - Provided are an oxide semiconductor composition, a preparation method thereof, an oxide semiconductor thin film using the composition, and a method of forming an electronic device. The oxide semiconductor composition includes a photosensitive material and an oxide semiconductor precursor. | 12-13-2012 |
20130036943 | SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 02-14-2013 |
20130059414 | COMPOSITIONS USED IN FORMATION OF OXIDE MATERIAL LAYERS, METHODS OF FORMING AN OXIDE MATERIAL LAYER USING THE SAME, AND METHODS OF FABRICATING A THIN FILM TRANSISTOR USING SAME - Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution. | 03-07-2013 |
20130161620 | COMPOSITION FOR AN OXIDE THIN FILM, A PREPARATION METHOD OF THE COMPOSITION, A METHOD FOR FORMING AN OXIDE THIN FILM USING THE COMPOSITION, AN ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM, AND A SEMICONDUCTOR DEVICE INCLUDING THE OXIDE THIN FILM - Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof. | 06-27-2013 |
20130171779 | COMPOSITION FOR MANUFACTURING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME - According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern. | 07-04-2013 |
20130343920 | VARIABLE DISPLACEMENT SWASH PLATE TYPE COMPRESSOR - Provided is a variable displacement swash plate type compressor including: a lug plate fixed to a driving shaft; and a swash plate combined to the lug plate and whose tilt angle is varied according to rotatory motion, wherein the lug plate includes a protruding portion protruding towards the swash plate, and a rotatory power projection transmitting power for rotating the swash plate is formed at a leading end of the protruding portion through the swash plate. Accordingly, a varying operation between a maximum tilt angle and a minimum tilt angle of the swash plate and a rotatory power transmitting operation for rotating the swash plate are performed at different locations, thereby simultaneously improving the varying operation and the rotatory power transmitting operation of the swash plate. | 12-26-2013 |
20140000480 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | 01-02-2014 |
20140195356 | Advertisement display method of mobile communication terminal using button bar or notification bar, and apparatus thereof - The present invention relates to a method for displaying an advertisement in a mobile communication terminal using a button bar (icon) or an indication bar (icon), and an apparatus thereof, the method comprising the steps of: sensing whether a user operates a call allowance button bar; and inserting and displaying advertisement contents on a predetermined first set screen (or area) within the call allowance button bar when sensing the user operation for the call allowance button bar according to the sensed result. In addition, the present invention can effectively provide the advertisement for the user by using the call allowance/rejection button bar (icon) or the indication bar (icon) such as a character and the like. | 07-10-2014 |
20140239292 | METHODS OF FORMING OXIDE THIN FILM AND ELECTRICAL DEVICES AND THIN FILM TRANSISTORS USING THE METHODS - Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C. | 08-28-2014 |
20140367603 | GLASS FIBER BOARD COMPRISING INORGANIC BINDER AND METHOD FOR PREPARING THE SAME - The present invention provides a glass fiber board comprising a glass fiber and an inorganic binder, wherein the inorganic binder comprises an aluminum phosphate. | 12-18-2014 |
20150064839 | METHOD OF FORMING TIN OXIDE SEMICONDUCTOR THIN FILM - A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution. | 03-05-2015 |
20150069382 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode. | 03-12-2015 |