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Hyun-Gi
Hyun-Gi Hong, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110037098 | Substrate structures and methods of manufacturing the same - Substrate structures and methods of manufacturing the substrate structures. A substrate structure is manufactured by forming a protrusion area of a substrate under a buffer layer, and forming a semiconductor layer on the buffer layer, thereby separating the substrate from the buffer layer except in an area where the protrusion is formed. The semiconductor layer on the buffer layer not contacting the substrate has freestanding characteristics, and dislocation or cracks may be reduced and/or prevented. | 02-17-2011 |
| 20110049549 | Light emitting devices and methods of manufacturing the same - Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer. | 03-03-2011 |
| 20110121330 | Gallium nitride light emitting devices and methods of manufacturing the same - A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer. | 05-26-2011 |
Hyun-Gi Hong, Gwanju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090269869 | Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same - Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL. | 10-29-2009 |
Hyun-Gi Yoon, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090126285 | Facility Module for Production and Storage of Cell Therapy Product - A facility module is provided for producing and storing a cell therapy product comprising: a Cell Therapy (CT) module one including separately prefabricated units having specific functions and separate entrances and exits so as to minimize contamination, and being capable of producing the cell therapy product, and a Banking of Cell and Tissue (BC) module Two including prefabricated units having specific functions and separate entrances and exits so as to minimize contamination, and being capable of appropriately storing hematopoietic stem cells, bone marrow cells and other cells for a prolonged period. It enables easy and low cost production of the cell therapy product, with sufficient quality to be transplanted into patients, within a short period, and permits clinical application to patients expeditiously. The present invention enables convenient installation and use of such a facility module anywhere adequate space is available, by providing the facility in a prefabricated module composed of specialized units according to function. | 05-21-2009 |