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Hyun Don

Hyun Don Kim, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100164357PHOTOSENSITIVE PASTE COMPOSITION FOR FABRICATING THE PLASMA DISPLAY PANEL ELECTRODE, PLASMA DISPLAY PANEL ELECTRODE AND PLASMA DISPLAY PANEL THEREBY - Disclosed herein is a photosensitive paste composition for a plasma display panel (PDP) electrode capable of minimizing edge curl, i.e., a phenomenon in which the edge of an electrode pattern portion is curled during baking and thus improving withstand voltage. The photosensitive paste composition comprises 40 to 55% by weight of a conductive powder, 5 to 15% by weight of an inorganic binder, 35 to 55% by weight of an organic vehicle, and the remaining percentage by weight of a solvent, wherein the inorganic binder is present in an amount of 15 to 35 parts by weight, with respect to 100 parts by weight of the conductive powder. Further disclosed are a plasma display panel (PDP) electrode fabricated using the composition, and a plasma display panel (PDP) comprising the electrode.07-01-2010

Hyun Don Kim, Anyang-Si KR

Patent application numberDescriptionPublished
20080261077Paste composition, display device including the same, and associated methods - A paste composition for an electrode includes a conductive material, a colored glass frit, the glass frit exhibiting a blackness (L*) value of about 85 or less, a binder, and a solvent.10-23-2008

Patent applications by Hyun Don Kim, Anyang-Si KR

Hyun Don Song, Seoul KR

Patent application numberDescriptionPublished
20110095306LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a second electrode under the second conductive semiconductor layer; a first texture over a first region of the first conductive semiconductor layer; an A-electrode over the first region of the first conductive semiconductor layer; and a B-electrode over a second region of the first conductive semiconductor layer, wherein the B-electrode includes a pad electrode connected to a wire.04-28-2011
20110133241LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a light emitting device package, a lighting system and a manufacturing method of light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first ohmic layer over the light emitting structure; and a second ohmic layer including a pattern over the first ohmic layer.06-09-2011

Hyun Don Song, Nam-Gu KR

Patent application numberDescriptionPublished
20100207123LIGHT EMITTING DEVICE - A light emitting device is provided. The light emitting device may include a plurality of light emitting elements formed on a first common electrode, each light emitting element having a first conductive layer formed over the first common electrode. The light emitting device may also include an active layer formed over the first conductive layer, a second conductive layer formed over the active layer, and an insulator formed between adjacent light emitting elements. A plurality of electrodes may be respectively formed on the plurality of light emitting elements, and a second common electrode may couple the plurality electrodes. Such a light emitting structure may improve emission characteristics, heat dissipation and high temperature reliability.08-19-2010
20100244084LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device (LED), an LED package, and a lighting system including the LED package are provided. The light emitting device (LED) may include a light emitting structure, a carrier injection layer, and an electrode layer. The light emitting structure may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The carrier injection layer may be positioned over the light emitting structure, and the electrode layer may be positioned over the carrier injection layer.09-30-2010