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Hyo-Sun
Hyo-Sun Hwang, Bucheon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090019275 | Secure Boot Method and Semiconductor Memory System Using the Method - A semiconductor memory system includes an external memory, an internal memory, and a one-time programmable (OTP) memory. The external memory includes a kernel, a public key, first boot information used to authenticate the public key and generate a test secret key, and a second boot loader verifying integrity of the kernel. The internal memory includes a first boot loader that verifies integrity of the second boot loader and generates the test secret key. The OTP memory includes second boot information generated using the public key and a secret key. Since the secure boot method and the semiconductor memory system using the method do not need an additional OTP memory to store a secret key unlike conventional technology, the capacity and recording time of the OTP memory can be reduced to about half compared to the conventional technology. | 01-15-2009 |
Hyo-Sun Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090302824 | REFERENCE VOLTAGE GENERATING APPARATUS AND METHOD - A method and apparatus for generating a low reference voltage having low power consumption characteristics is provided. A reference voltage generating apparatus includes a constant current source circuit which generates a reference current. A load circuit is connected to the constant current source circuit and generates a voltage which is proportional to the reference current. A current branch circuit removes a portion of temperature-invariant current components included in the reference current from a connection terminal of the constant current source circuit and the load circuit to a ground terminal through a current branch which is different from a current branch of the load circuit. | 12-10-2009 |
| 20090322737 | Gate Driver, Method of Driving the Gate Driver, and Display Panel Driving Apparatus Including the Gate Driver - A display panel driving apparatus and a method of driving the same are provided, and, in particular, a gate driver and a method of driving the gate driver. The gate driver includes a decoder that decodes gate line selection data and that generates a gate line selection signal. A gate driving circuit generates a gate driving signal in a pre-charging phase and a driving phase in response to the gate line selection signal and a pre-charging control signal that controls an off-state of non-selected gate lines. In a time period of the driving phase in which a gate line is not selected, a node that has been in a floating state is held to a target voltage level in response to a hold control signal. The hold control signal is generated based upon a timing relationship between the gate line selection signal and the pre-charging control signal. | 12-31-2009 |
Hyo-Sun Kim, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090176177 | METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY - A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern. | 07-09-2009 |
Hyo-Sun Lee, Incheon KR
| Patent application number | Description | Published |
|---|---|---|
| 20110027996 | SLURRY COMPOSITION FOR A CHEMICAL MECHANICAL POLISHING PROCESS, METHOD OF POLISHING AN OBJECT LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SLURRY COMPOSITION - A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided. | 02-03-2011 |