Patent application number | Description | Published |
20080214018 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-04-2008 |
20080318437 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE UTILIZING LOW DIELECTRIC LAYER FILLING GAPS BETWEEN METAL LINES - A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer. | 12-25-2008 |
20090001044 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING A SPACER AS AN ETCH MASK FOR FORMING A FINE PATTERN - A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask. | 01-01-2009 |
20090115019 | SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device having an air gap includes an insulation layer formed on a semiconductor substrate and having a metal line forming region. A metal line is formed to fill the metal line forming region of the insulation layer. An air gap is formed between the insulation layer and the metal line. | 05-07-2009 |
20120001234 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes first impurity regions formed in a substrate, second impurity regions formed in the first impurity regions, wherein the second impurity regions has a junction with the first impurity regions, recess patterns formed over the first impurity regions in contact with the second impurity regions, and transfer gates filling the recess patterns. | 01-05-2012 |
20120231634 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
20120231635 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
20130320549 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures. | 12-05-2013 |
20140004678 | METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE | 01-02-2014 |
20140021553 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method for fabricating a semiconductor device includes defining a curved active region by forming a plurality of trenches over a semiconductor substrate, forming an insulating layer to fill the plurality of trenches, and forming a pair of gate lines crossing the curved active region, so that it is possible to prevent leaning of an active region by forming a curved active region. | 01-23-2014 |
20140175659 | SEMICONDUCTOR DEVICE INCLUDING AIR GAPS AND METHOD OF FABRICATING THE SAME - This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs. | 06-26-2014 |
20140179101 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer. | 06-26-2014 |
20140299989 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure formed adjacent to a sidewall of the first conductive structure, and an insulation structure including an air gap that is formed between the first conductive structure and the second conductive structure, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer that is formed over the second conductive pattern, and a third conductive pattern that is formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap. | 10-09-2014 |
20140308794 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming an insulation layer over a substrate; forming an open portion in the insulation layer; forming a sacrificial spacer over sidewalls of the open portion; forming, over the sacrificial spacer, a first conductive pattern in a lower section of the open portion; forming an ohmic contact layer over the first conductive pattern; forming an air gap by removing the sacrificial spacer; capping the air gap by forming a barrier layer over the ohmic contact layer; and forming a second conductive pattern over the barrier layer to fill an upper section of the open portion. | 10-16-2014 |
20150035050 | SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping a portion of the air gaps, and capping structures each capping the other portion of the air gaps. | 02-05-2015 |
20150084155 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method for fabricating a semiconductor device includes defining a curved active region by forming a plurality of trenches over a semiconductor substrate, forming an insulating layer to fill the plurality of trenches, and forming a pair of gate lines crossing the curved active region, so that it is possible to prevent leaning of an active region by forming a curved active region. | 03-26-2015 |