| Patent application number | Description | Published |
|---|
| 20110095263 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer. | 04-28-2011 |
| 20110101340 | LIGHT EMITTING DEVICE INCLUDING SECOND CONDUCTIVE TYPE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - Provided is a light emitting device, which includes a first conductive type semiconductor layer, an active layer, a roughness pattern, and a second conductive type semiconductor layer. The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide. | 05-05-2011 |
| 20110108868 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to an embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer including first and second active layers between the first and second conductive semiconductor layers. The first active layer emits light having a first wavelength band of 440 nm to 500 nm, and the second active layer emits light having a second wavelength band, which is shorter than the first wavelength band. | 05-12-2011 |
| 20110127550 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air. | 06-02-2011 |
| 20110127565 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first semiconductor layer on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode on the step portion formed at the at least one lateral side of the first semiconductor layer. | 06-02-2011 |
| 20110147700 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier layer between the first quantum well layer and the second quantum well layer. The first quantum well layer may include a first plurality of sub-barrier layers and a first plurality of sub-quantum well layers, and the second quantum well layer may include a second plurality of sub-barrier layers and a second plurality of sub-quantum well layers. A bandgap of the first quantum well layer may be different than a bandgap of the second quantum well layer. | 06-23-2011 |
| 20110177628 | LIGHT EMITTING DEVICE FABRICATING APPARATUS AND LIGHT EMITTING DEVICE FABRICATING METHOD USING THE SAME - Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to apply a first current to the light emitting device. The power source part supplies power to the first and second contact parts. The loading plate supports and heats the light emitting device. The chamber accommodates the light emitting device, the first and second contact parts, and the loading plate, and has a vacuum state or oxygen atmosphere. | 07-21-2011 |
| 20110198564 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer. | 08-18-2011 |
