| Patent application number | Description | Published |
|---|
| 20080203393 | THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION - The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas. | 08-28-2008 |
| 20080211980 | Display substrate and display apparatus having the same - A display substrate includes a gate line, a gate insulating layer, a data line, a thin-film transistor (TFT), a storage line, a passivation layer, a color filter layer, a pixel electrode, a first light-blocking layer and a second light-blocking layer. The storage line includes the same material as the gate line. The passivation layer covers the data line. The color filter layer is formed on the passivation layer. The pixel electrode is formed on the color filter layer in each pixel. The first light-blocking layer is formed between adjacent pixel electrodes, and includes the same material as the gate line. The second light-blocking layer is formed between the first light-blocking layer, and includes the same material as the data line. Therefore, an aperture ratio may be increased. | 09-04-2008 |
| 20080252828 | THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY - A thin film transistor array panel includes a substrate, a first gate line and a second gate line formed on the substrate, a storage electrode line between the first gate line and the second gate line, a data line intersecting the first gate line and the second gate line, a first thin film transistor connected to the first gate line and the data line, at least one color filter formed on the first thin film transistor, wherein the color filter comprises a first portion adjacent the first gate line with respect to the storage electrode line, a second portion adjacent the second gate line with respect to the storage electrode line, and a first connection connecting the first portion and the second portion and having a narrower width than that of the first and second portions, a first sub-pixel electrode formed on the color filter and connected to the first thin film transistor, and a second sub-pixel electrode facing the first sub-pixel electrode with respect to a gap, wherein at least one of an edge of the first sub-pixel electrode and an edge of the second sub-pixel electrode crosses over the first connection of the color filter, the edge of the first sub-pixel electrode, and the edge of the second sub-pixel electrode defining the gap between the first sub-pixel electrode and the second sub-pixel electrode. | 10-16-2008 |
| 20080299712 | MANUFACTURING METHOD OF A THIN FILM TRANSISTOR ARRAY PANEL - A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode, forming a gate insulating layer on the gate line, forming a semiconductor stripe on the gate insulating layer; forming ohmic contacts on the semiconductor stripe, forming a data line including a source electrode and a drain electrode on the ohmic contacts, depositing a passivation layer on the data line and the drain electrode, and forming a pixel electrode connected to the drain electrode. The formation of the data line and the drain electrode, the ohmic contacts, and the semiconductor stripe includes depositing an intrinsic silicon layer, an extrinsic silicon layer, and a conductor layer on the gate insulating layer, forming a photoresist including a second portion corresponding to a channel area between the source electrode and the drain electrode, and a first portion corresponding to a wire area on the data line and the drain electrode, wherein the first portion is thicker than the second portion, etching the conductor layer corresponding to a remaining area except for the wire and the channel area using the photoresist as an etch mask, removing the second portion to expose the conductor layer on the channel areas, etching the intrinsic silicon layer and the extrinsic silicon layer on the remaining area, etching the conductor layer and the extrinsic silicon layer on the channel areas, and removing the first portion. | 12-04-2008 |
| 20090057671 | THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME - Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer. | 03-05-2009 |
| 20090141227 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME - A display substrate includes a transparent insulating substrate, a transparent common electrode, a dummy pattern and a key pattern. The transparent insulating substrate has a display area and a non-display area. Images are displayed in the display area, and the non-display area surrounds the display area. The transparent common electrode is formed in the display area of the insulating substrate. The dummy pattern is formed in the non-display area of the insulating substrate. The dummy pattern is formed from the same material as the common electrode. The key pattern is formed on the dummy pattern. The key pattern may include a metal or an opaque photoresist. Therefore, a process of manufacturing the display substrate may be simplified. | 06-04-2009 |
| 20090147188 | DISPLAY AND METHOD OF MANUFACTURING THE SAME - In a light transmitting, color image display unit, a top surface of a black matrix partition wall exhibits lyophobicity relative to in-solution pigment particles while sidewall surfaces of the black matrix exhibit lyophilicity relative to in-solution pigment particles. This allows the pigment containing solutions to abut without repulsion against the sidewall surfaces. Consequently, it is possible to prevent color filter solutions deposited through an inkjet deposition process from overflowing over the lyophobic partition wall tops into adjacent pixel regions and it is also possible to conformably define color filters of consistent thickness between the black matrix partition walls. | 06-11-2009 |
| 20100203715 | THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION - The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas. | 08-12-2010 |
| 20110079776 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved. | 04-07-2011 |
