Hye-Rim

Hye-Rim Kim, Daejeon KR

Patent application number	Description	Published
20100110598	LINE COMMUTATION TYPE FAULT CURRENT LIMITER - A line commutation type fault current limiter which can reduce manufacturing and maintenance costs, carry out line commutation by operating a cutoff switch by fault current energy, respond rapidly to a fault, be immediately restored to an original state, and perform either an active or a passive operation. The line commutation type fault current limiter includes a coupled inductor having a primary side connected to a main circuit and a secondary side matched with the primary side, a Zener diode switch electrically connected to the secondary side of the coupled inductor, a line commutation switch connected to the Zener diode switch as well as the primary side of the coupled inductor to form a bypass path in parallel with the primary side of the coupled inductor and to cut off the main circuit, when the Zener diode switch is turned on, and a current limiting unit electrically connected in parallel with the line commutation switch to limit a current flowing into the main circuit.	05-06-2010

Patent application number	Description	Published
20110034004	METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device, the method including forming a buffer oxide layer in a first region and a second region of a semiconductor substrate; forming a plurality of first preliminary mask patterns on the buffer oxide layer in the first region; forming a plurality of second preliminary mask patterns between every two adjacent first preliminary mask patterns from among the plurality of first preliminary mask patterns, respectively; forming a plurality of first mask patterns and a plurality of second mask patterns by trimming the plurality of first preliminary mask patterns and the plurality of second preliminary mask patterns; forming a plurality of first active region mask patterns for exposing the semiconductor substrate; defining a plurality of active regions in the semiconductor substrate by forming a trench including a plurality of first trench spaces having same width as the first space and a plurality of second trench spaces under the second space in the first region; and forming a first liner layer on the semiconductor substrate having the trench therein such that the plurality of first trench spaces are completely filled with the first liner layer.	02-10-2011

Patent application number	Description	Published
20110298761	LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - A liquid crystal display device capable of reducing power consumption of a gate driving circuit and a method for driving the same are discussed. The liquid crystal display device includes a liquid crystal panel including pixel regions defined by gate lines and data lines, a timing controller for outputting a plurality of data control signals, a plurality of clock pulses and a start pulse, a time-divisional switching unit for time-dividing the plurality of clock pulses and outputting time-divisional clock pulses, a data driving unit for driving the data lines according to the plurality of data control signals, and a gate driving unit including a plurality of stages for sequentially outputting scan pulses according to the start pulse and the plurality of time-divisional clock pulses, wherein the stages receive the time-divisional clock pulses in units of blocks and each of the time-divisional clock pulses supplied to the blocks is different.	12-08-2011