Patent application number | Description | Published |
20120037945 | LIGHT EMITTING DEVICE - Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 A. | 02-16-2012 |
20120043574 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device. | 02-23-2012 |
20120068215 | LIGHT EMITTING DEVICE - A light emitting device is provided. According to an embodiment, the light emitting device includes a first layer to diffuse first light emitted from the active layer, and a second layer to convert the diffused first light into second light having a different wavelength than the first light. Accordingly, it may be possible to diffuse first light emitted from the light emitting structure and to wavelength-convert the first light into second light because the conversion layer including the first and second layers is disposed on the light emitting structure. | 03-22-2012 |
20120107979 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved. | 05-03-2012 |
20120193654 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device includes a support member, a light emitting structure disposed over the support member and includes first and second light emitting structures, the first and second light emitting structures including a first semiconductor layer, a second semiconductor layer, and an active layer, a passivation layer disposed on one side surface of the first light emitting structure, a first electrode disposed between the support member and the first semiconductor layer in the first light emitting structure, a second electrode disposed on a side surface of the passivation layer and on the second semiconductor layer in the first light emitting structure, a third electrode disposed between the support member and the first semiconductor layer in the second light emitting structure, an insulation layer disposed with a through hole, and a fourth electrode disposed in the through hole. | 08-02-2012 |