Patent application number | Description | Published |
20080295325 | MULTI-CHIP PACKAGING USING AN INTERPOSER SUCH AS A SILICON BASED INTERPOSER WITH THROUGH-SILICON-VIAS - The formation of electronic assemblies, including assemblies having an interposer, are described. In one embodiment, a method includes forming a plurality of vias extending partially through a body, the vias including sidewalls defined by the body. An insulating layer is formed on the sidewalls and on an upper surface of the body. An electrically conductive layer is formed on the insulating layer in the vias and on the upper surface of the body, the electrically conductive layer defining a first metal pad layer on the upper surface and a second metal pad layer in contact with the first metal pad layer, the second metal pad layer having a denser pitch between adjacent pads than the first metal pad layer. The method also includes forming a dielectric layer between the adjacent metal pads in the first and second pad layers. The method also includes coupling a plurality of elements to the second metal pad layer. After the coupling the elements, the method includes thinning the body through a lower surface and exposing the electrically insulating layer in the vias. The method also includes removing a portion of the electrically insulating layer in the vias, and coupling the electrically conductive layer to a substrate, wherein the body is positioned between the elements and the substrate. Other embodiments are described and claimed. | 12-04-2008 |
20080295329 | MULTI-CHIP PACKAGING USING AN INTERPOSER SUCH AS A SILICON BASED INTERPOSER WITH THROUGH-SILICON-VIAS - The formation of electronic assemblies, including assemblies having an interposer, are described. In one embodiment, a method includes providing a body and forming a first metal pad layer on a first surface thereof. A second metal pad layer is formed in contact with the first patterned metal pad layer, the second metal pad layer having a denser pitch between adjacent pads than the first metal pad layer. A dielectric layer is formed between the adjacent metal pads in the first and second metal pad layers. After the forming the first and second metal pad layers and the dielectric layer, the method includes forming a plurality of vias extending through the body from a second surface thereof, the vias extending through a thickness of the body and exposing the first metal pad layer. The method also includes forming an insulating layer on sidewalls of the vias and on the second surface, and forming an electrically conductive layer on the insulating layer and on the exposed surface of the first metal layer. The method also includes coupling a plurality of elements to the second metal pad layer and coupling the electrically conductive layer to a substrate, the body being positioned between the elements and the substrate. Other embodiments are described and claimed. | 12-04-2008 |
20090057378 | IN-SITU CHIP ATTACHMENT USING SELF-ORGANIZING SOLDER - An in-situ chip attachment process uses a self-organizing solder paste composed of a synthetic resin organic flux and solder particles having a mean diameter that falls between around 0.1 μm and around 10 μm. The process is carried out by blanket depositing the solder paste on a first substrate having a first metal structure, pressing a second substrate having a second metal structure into the solder paste such that the second metal structure is aligned with the first metal structure and a gap exists between the first and second metal structures, heating the solder paste to a reflow temperature for a time duration sufficient to cause the solder particles to coalesce and form an electrical connection between the first and second metal structures. The reflow temperature ranges from around 100° C. to around 500° C. The time duration ranges between around 30 seconds and around 900 seconds. | 03-05-2009 |
20090072013 | NANO-SCALE PARTICLE PASTE FOR WIRING MICROELECTRONIC DEVICES USING INK-JET PRINTING - Nano-scale particle paste may be used for on-die routing and other applications using deposition and inkjet printing. A metal paste is applied to a surface of a die to electrically couple two spaced apart connection points of the die. Alternatively, or in addition, the paste may contain carbon nanotubes. The paste may be used on other surfaces as well. | 03-19-2009 |
20100052159 | Methods of forming C4 metal stud bump for fine pitch packaging applications and structures formed thereby - Methods of forming microelectronic device structures are described. Those methods may include forming a passivation layer on a substrate, wherein the substrate comprises an array of conductive structures, forming a first via in the passivation layer, forming a second via in the passivation layer that exposes at least one of the conductive structures in the array, and wherein the second via is formed within the first via space to form a step via, and forming a conductive material in the step via, wherein a round dimple is formed in the conductive material. | 03-04-2010 |
20100084764 | Carbon nanotube-reinforced solder caps, methods of assembling same, and chip packages and systems containing same - A carbon nanotube solder is formed on a substrate of an integrated circuit package. The carbon nanotube solder exhibits high heat and electrical conductivities. The carbon nanotube solder is used as a solder microcap on a metal bump for communication between an integrated circuit device and external structures. | 04-08-2010 |
Patent application number | Description | Published |
20100172388 | LIGHT EMITTING DEVICE - A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light. | 07-08-2010 |
20120007113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Al | 01-12-2012 |
20120292592 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 11-22-2012 |
20120292593 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×10 | 11-22-2012 |
20120292632 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 11-22-2012 |
20120292649 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 11-22-2012 |
20130062612 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer. | 03-14-2013 |
20130087760 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10 | 04-11-2013 |
20130087762 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 04-11-2013 |
20130306981 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 11-21-2013 |
20140029636 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, a first intermediate layer, and a second intermediate layer. The n-type and p-type semiconductor layers include a nitride semiconductor. The light emitting layer is provided between the n-type and p-type semiconductor layers, and includes barrier layers and a well layer. A bandgap energy of the well layer is less than that of the barrier layers. The first intermediate layer is provided between the light emitting layer and the p-type semiconductor layer. A bandgap energy of the first intermediate layer is greater than that of the barrier layers. The second intermediate layer includes first and second portions. The first portion is in contact with a p-side barrier layer most proximal to the p-type semiconductor layer. The second portion is in contact with the first intermediate layer. | 01-30-2014 |
20140042388 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Al | 02-13-2014 |
20140048770 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 02-20-2014 |
20140080240 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers. | 03-20-2014 |
20140231824 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 08-21-2014 |
20140252382 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers. | 09-11-2014 |
20140319457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 10-30-2014 |
20150102381 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 04-16-2015 |
20150325555 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers. | 11-12-2015 |
Patent application number | Description | Published |
20110216554 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component. | 09-08-2011 |
20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less. | 09-08-2011 |
20110216799 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. | 09-08-2011 |
20120032215 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm | 02-09-2012 |
20120228581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm | 09-13-2012 |
20140111095 | LIGHT-EMITTING ELECTRIC-POWER GENERATION MODULE AND LIGHT-EMITTING ELECTRIC-POWER GENERATION DEVICE - A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element. | 04-24-2014 |