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| 20090067623 | Method and apparatus for performing fast authentication for vertical handover - A method and apparatus for performing fast authentication for a vertical handover are provided. The method includes requesting a handover from a serving network to a target network and generating a derivative Master Session Key (MSK) for key generation, and transmitting the derivative MSK to the target network. Accordingly, a key negotiation process can start by skipping an access authentication process. Therefore, there is an advantage in that a fast authentication process can be achieved. | 03-12-2009 |
| 20090086679 | Apparatus and method for supporting vertical handover on a wireless communication system - A broadband wireless communication system is provided. An apparatus for an information server (IS) comprises an event module for determining whether updating the network information of at least one access network (AN) is needed, a generator module for generating at least one Information_Get_Request packet for requesting the network information of the at least one AN when the updating is needed, a communication module for transmitting at least one Information_Get_Request packet to the at least one AN, and a database (DB) module for storing network information within an Information_Get_Response packet received from the at least one AN. | 04-02-2009 |
| 20090088162 | Method and system for supporting IP Multimedia Subsystem for voice call continuity based on media-independent handover - Provided is a method and system for supporting IMS VCC based on an MIH. In a method of supporting a multimedia service for an MIH-based VCC, neighbor network information is obtained from an MIH server periodically or according to an event trigger and scanning the neighbor network. The capacity of at least one more candidate networks is detected from the scanning results to prepare a handover. A target network is determined among the candidate networks to reserve resources and a handover command event is generated to perform a domain transfer. The handover is completed after the performing of the domain transfer. | 04-02-2009 |
| 20090088163 | Apparatus and method for performing vertical handover in a wireless communication system - A vertical handover method and apparatus in a wireless communication system are provided, in which a serving network selects a target network for a vertical handover of a terminal from among at least one candidate target network to which the terminal can perform the vertical handover, transmits information about the selected target network to the terminal, and requests the vertical handover of the terminal to the target network, the target network acquires a profile of the terminal from a policy store, upon receipt of the vertical handover request from the serving network, the terminal requests a connection to the target network, and the target network transmits information about a router to which the terminal will connect to the terminal, upon receipt of the connection request from the terminal and updates a proxy binding for the terminal in the policy store. | 04-02-2009 |
| 20090147752 | Method, apparatus and system for assigning internet protocol address in communication system based on media independent handover - Provided is a method, apparatus and system for assigning an IP address in a communication system based on a Media Independent Handover (MIH). In the method, information about a neighbor network is obtained through an MIH service. In the event of a handover to a heterogeneous network, one or more New Care of Addresses (NCoAs) are generated using the information about the neighbor network. The generated NCoA is transmitted to a candidate network through the MIH service. A Duplicate Address Detection (DAD) operation is performed on the NCoA. | 06-11-2009 |
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| 20100157097 | VOICE RECORDABLE TERMINAL AND ITS IMAGE PROCESSING METHOD - A voice recordable terminal and its image processing method are provided. The image processing method includes determining whether or not capturing is selected when a recording function of storing voice data is performed, acquiring at least one meta image when the capturing is selected, and storing at least one voice file including the acquired meta image and the voice data. | 06-24-2010 |
| 20110159469 | MULTIMEDIA APPARATUS - A multimedia apparatus is provided. The multimedia apparatus extracts a workout prescription including at least one method of exercise based on user information inputted by a user. As a result, the user is able to set and manage his exercise method using the multimedia apparatus. | 06-30-2011 |
| 20110160550 | METHOD FOR TAGGING CONDITION INFORMATION AND MULTIMEDIA APPARATUS USING THE SAME - A method for tagging condition information and a multimedia apparatus using the same are provided. The method includes measuring condition information of a user who is enjoying content, and tagging the content with the measured condition information. Accordingly, the user's condition information for each content is checked and the user's condition information is adjusted using the condition information tagged onto the contents. | 06-30-2011 |
| 20110160884 | MULTIMEDIA DEVICE AND METHOD FOR CONTROLLING OPERATION THEREOF - A multimedia apparatus and a method for controlling operations thereof are provided. The multimedia apparatus includes an input unit for receiving a selection signal, a sensing unit for sensing disposition of the multimedia apparatus, and a controller for, if the selection signal is input, performing different operations depending on the disposition. Accordingly, various operations of the multimedia apparatus may be controlled by simple manipulation. | 06-30-2011 |
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| 20110062448 | Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices - Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer. | 03-17-2011 |
| 20110212582 | Method Of Manufacturing High Electron Mobility Transistor - A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate. | 09-01-2011 |
| 20110215378 | High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same - High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer. | 09-08-2011 |
| 20110221482 | Semiconductor device - Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage. | 09-15-2011 |
| 20110272741 | High electron mobility transistors and methods of manufacturing the same - High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at least a 2-dimensional electron gas (2DEG) channel, a channel supplying layer for forming the 2DEG channel in the channel formation layer, a portion of the channel supplying layer including a first oxygen treated region. The channel supplying layer may include a second oxygen treated region that extends from the first oxygen treated region towards the drain electrode, and the depth and concentration of oxygen of the second oxygen treated region may be less than those of the first oxygen treated region. | 11-10-2011 |
| 20110272743 | High Electron Mobility Transistors Including Lightly Doped Drain Regions And Methods Of Manufacturing The Same - High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer. | 11-10-2011 |
| 20110273221 | Driving circuits, power devices and electronic devices including the same - A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal. | 11-10-2011 |
| 20110303952 | High Electron Mobility Transistors And Methods Of Fabricating The Same - A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm. | 12-15-2011 |
| 20120037958 | POWER ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant. | 02-16-2012 |
| 20120086049 | E-Mode High Electron Mobility Transistor And Method Of Manufacturing The Same - According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure. | 04-12-2012 |
| 20120088341 | Methods Of Manufacturing High Electron Mobility Transistors - The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer. | 04-12-2012 |
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| 20090245982 | UNIT FOR OPENING INSERT FOR TEST TRAY AND METHOD OF MOUNTING SEMICONDUCTOR DEVICE USING THE SAME - A unit for opening an insert of a test tray which comprises an accommodating space for accommodating a semiconductor device and a support for supporting the semiconductor device accommodated in the accommodating space, the unit includes a body, a pair of opening devices provided in the body to open the insert, and a positioning guide unit protruding to be inserted into an accommodating space for a semiconductor device when opening the insert and supporting the semiconductor device that is transferred into the accommodating space to be spaced upward apart from a support provided in the accommodating space. | 10-01-2009 |
| 20100001739 | TEST TRAY FOR TEST HANDLER - A test tray for a test handler is disclosed that is loaded with semiconductor devices and then carries them along a predetermined circulation route. The test tray allows one fixing unit to fix a plurality of adjacent insert modules to the receiving spaces of the frame, thereby efficiently using the space of the frame and allowing a relatively large number of insert modules to be installed in the same area, in comparison to the conventional test tray. | 01-07-2010 |
| 20110265316 | OPENER FOR TEST HANDLER - An opener for a test handler is provided. Even when holding members of inserts of a carrier board are manipulated to release semiconductor devices that have been in a held state, a predetermined distance can remain between an upper surface of the opening plate and a lower surface of the insert, thus preventing the inserts from becoming defective. | 11-03-2011 |
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| 20110051985 | PIEZOELECTRIC MICRO SPEAKER HAVING PISTON DIAPHRAGM AND METHOD OF MANUFACTURING THE SAME - Provided are a piezoelectric micro speaker having a piston diaphragm and a method of manufacturing the piezoelectric micro speaker. The piezoelectric micro speaker includes: a substrate having a cavity formed therein; a vibrating membrane that is disposed on the substrate and covers at least a center part of the cavity; a piezoelectric actuator disposed on the vibrating membrane so as to vibrate the vibrating membrane; and a piston diaphragm that is disposed in the cavity and performs piston motion by vibration of the vibrating membrane. When the vibrating membrane vibrates by the piezoelectric actuator, the piston diaphragm, which is connected to the vibrating membrane through a piston bar, performs a piston motion in the cavity. | 03-03-2011 |
| 20110064250 | PIEZOELECTRIC MICRO SPEAKER INCLUDING ANNULAR RING-SHAPED VIBRATING MEMBRANES AND METHOD OF MANUFACTURING THE PIEZOELECTRIC MICRO SPEAKER - A piezoelectric micro speaker and a method of manufacturing the same are provided. The piezoelectric micro speaker includes a substrate having a cavity formed therein and a diaphragm that is disposed on the substrate that overlaps the cavity. A plurality of first vibrating membranes having concentric annular ring shapes are disposed in a first region of the diaphragm corresponding to a center of the cavity. A second vibrating membrane including a different material from that of the first vibrating membranes is formed in the second region of the diaphragm corresponding to an edge of the cavity. A piezoelectric actuator for vibrating the first vibrating membranes is formed on and between the concentric annular rings of the first vibrating membranes. | 03-17-2011 |
| 20110075867 | PIEZOELECTRIC MICRO SPEAKER INCLUDING WEIGHT ATTACHED TO VIBRATING MEMBRANE AND METHOD OF MANUFACTURING THE SAME - Provided are a piezoelectric micro speaker and a method of manufacturing the same. The piezoelectric micro speaker includes: a substrate having a cavity therein; a diaphragm that is disposed on the substrate, the diaphragm including a vibrating membrane that overlaps the cavity; a piezoelectric actuator that is disposed on the vibrating membrane; and a weight that is disposed in the cavity and attached to a center portion of the vibrating membrane. | 03-31-2011 |
| 20110075879 | PIEZOELECTRIC MICRO SPEAKER WITH CURVED LEAD WIRES AND METHOD OF MANUFACTURING THE SAME - A micro speaker includes a substrate having a cavity formed therein, a diaphragm formed on the substrate overlapping the cavity. The diaphragm includes a first vibration membrane formed in a first area corresponding to a center portion of the cavity and a second vibration membrane formed in a second area corresponding to an edge portion of the cavity and formed of material different from that used for the first vibration membrane. A piezoelectric actuator is formed including a first electrode layer formed on the first vibration membrane, a piezoelectric layer formed on the first electrode layer, and a second electrode layer formed on the piezoelectric layer, and first and second curved lead wires, respectively connected to the first and second electrode layers across the second area, which are symmetrical to the center of the piezoelectric actuator. | 03-31-2011 |
| 20110085684 | PIEZOELECTRIC MICRO SPEAKER - Provided is a piezoelectric micro speaker. The piezoelectric micro speaker includes a device plate having a front cavity, a front plate having a radiation hole which communicates with the front cavity in front of the device plate, and a rear plate having a rear cavity and a vent portion. A rear portion of the device plate forms a wall of the vent portion. The device plate includes at least one first vent hole which communicates with the vent portion, and the front plate includes at least one second vent hole which communicates with the first vent hole. | 04-14-2011 |
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| 20090025492 | APPARATUS FOR ADJUSTING POSITION OF VERTEBRAL COLUMN OF DUMMY MODEL FOR ESTIMATING FEELING OF SITTING IN SEAT - An apparatus for adjusting a position of the vertebral column of a dummy model for estimating the feeling of sitting in a seat almost exactly mimics the characteristics of the vertebral joints of a human being. The apparatus comprises a pelvic plate; a plurality of lumbar joints, stacked on the pelvic plate so as to be spaced apart from each other, and having joint springs installed in front and rear portions thereof centered around a rotation center interconnecting two adjacent ones thereof; femur joints rotatably installed below the pelvic plate, and connected with one end of each femur bar; and pelvic pivoting members transmitting rotating force of the femur joints, which is caused by vertical pivoting of the femur bars, to the pelvic plate, and changing a vertical angle of the pelvic plate. | 01-29-2009 |
| 20090056481 | PELVIS ASSEMBLY FOR DUMMY MODEL - A pelvis assembly for a dummy includes a pelvic plate attached to a lumbar region of the dummy, and one of more pelvic units, attached to the pelvic plate to transmit motion from a femur bar of the dummy to the plate. Each pelvic unit includes a hip joint, attached to the femur bar; a rotary axle, a first end of which is attached to the hip joint, and which is disposed laterally, to rotate together with the hip joint when the femur bar pivots vertically; and one or more pelvic angle adjusters, installed near a second end of the rotary axle, to transmit rotation of the rotary axle to the pelvic plate, thereby changing a vertical angle of the pelvic plate. | 03-05-2009 |
| 20090151444 | Human Dummy System for Evaluating Comfort of Seat - A human dummy system for evaluating the comfort of a seat comfort includes sensor units and a data processing unit. The sensor units are attached to the relevant joints of a human dummy, and detect the angles of the relevant joints. The data processing unit calculates information about relative locations of adjacent joints on the basis of the information about the angles of the relevant joints, and calculates the absolute location of a specific joint through coordinate system transformation between the information about relative locations and the joints of the human dummy. | 06-18-2009 |
| 20100117414 | Intelligent Vehicle Seat Support System - An intelligent vehicle seat support system may include an air storage tank for storing air and supplying the air when needed, a plurality of air cushions disposed in a vehicle seat in contact with a human body, and configured to selectively expand and shrink depending on the air flow, a pressure sensor for measuring air pressure of each air cushion, an air control valve disposed between the air storage tank and the air cushions, and configured to control the air that flows into each of the air cushions, and a control unit for, when a passenger takes the vehicle seat, automatically controlling the air control valve so that it starts injecting air into each of the air cushions, and, when the air pressure of each air cushion is higher than a preset reference value, controlling the air control valve so that it stops injecting air into each air cushion. | 05-13-2010 |
| 20120013155 | AUTOMATIC MOVING APPARATUS FOR PRE-CRASH HEADREST - An automatic moving apparatus may include a collision prediction sensor, a control unit comparing a value measured by the collision prediction sensor, with a reference value stored in the control unit, and outputting a control signal when it may be determined that the value measured by the collision prediction sensor is higher than the reference value, and a headrest moving unit moving a headrest unit toward a passenger's head before the headrest unit comes into contact with the passenger's head, and including a stay rod connected to the headrest unit, both sides of the stay rod being placed in a vertical direction, tilting device tilting the stay rod forwards or backwards relative to a seatback in response to the control signal of the control unit, and vertical moving device moving the stay rod in a vertical direction in response to the control signal of the control unit. | 01-19-2012 |
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| 20100097842 | RESISTANCE VARIABLE MEMORY DEVICE PROGRAMMING MULTI-BIT DATA - A phase change memory device is provided to simultaneously program multi-bit data. The phase change memory device includes a memory cell array in which multi-bit data is stored, a buffer circuit storing a lower bit and an upper bit of the multi-bit data, a write driver applying program current to the memory cell array, and a control logic controlling the write driver to simultaneously program the multi-bit data. | 04-22-2010 |
| 20100097849 | VARIABLE RESISTANCE MEMORY DEVICE PERFORMING PROGRAM AND VERIFICATION OPERATION - A variable resistance memory device includes; a memory cell array comprising a plurality of memory cells, a pulse shifter shifting a plurality of program pulses to generate a plurality of shifted program pulses, a write and verification driver receiving the plurality of shifted program pulses to provide a program current that varies with the plurality of shifted program pulses to the plurality of memory cells, and control logic providing the plurality of program pulses to the pulse shifter and the write and verification driver during a program/verification operation, such at least two write data bits are programmed to the memory cell array in parallel during the program/verification operation. | 04-22-2010 |
| 20110233503 | METHODS OF FORMING PHASE-CHANGE MEMORY DEVICES AND DEVICES SO FORMED - A method of forming can be provided by forming a metal silicide layer that includes a diffusion metal on a substrate. A native oxide layer can be formed on the metal silicide layer and forming a metal oxide layer by reacting the native oxide layer with the diffusion metal. A phase-change layer and an upper electrode can be formed on the metal oxide layer. A phase-change memory device can include a substrate and a conductive region on the substrate with a lower electrode on the conductive region, where the lower electrode can include a metal silicide layer on the conductive region and a metal silicon nitride layer having a resistivity of about 10 to about 100 times that of the metal silicide layer. A metal oxide layer can be located between the metal silicon nitride layer and the metal silicide layer, the metal oxide layer comprising a resistivity that is greater than that of the metal silicide layer and less than the resistivity of the metal silicon nitride layer. A phase-change layer and an upper electrode can be located on the lower electrode. | 09-29-2011 |
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| 20100061141 | Non-volatile memory device and storage system including the same - A non-volatile memory device may include a plurality of data cells, each data cell of the plurality of data cells programmed to have a first resistance variation among a plurality of first resistance variations; and a plurality of reference cells, each reference cell of the plurality of reference cells programmed to have a second resistance variation among a plurality of second resistance variations. A change in a resistance of the data cells is used to identify a level of data programmed to memory. Because the resistance variation of the data cells may change with time or due to changes in temperature, a reference cell is also included in the non-volatile memory device. The reference cell is used for effective reading of the data value of a corresponding data cell. A storage system may include the non-volatile memory device. | 03-11-2010 |
| 20100220520 | Multi-bit phase change memory devices - A multi-bit phase change memory device including a phase change material having a plurality of crystalline phases. A non-volatile multi-bit phase change memory device may include a phase change material in a storage node, wherein the phase change material includes a binary or ternary compound sequentially having at least three crystalline phases having different resistance values according to an increase of temperature of the phase change material. | 09-02-2010 |
| 20110254103 | Semiconductor Memory Devices Having Strain Layers Therein That Increase Device Performance And Methods of Forming Same - Integrated circuit memory devices include a semiconductor word line having an electrically insulating strain layer directly contacting an upper surface thereof. The strain layer, which has a contact opening therein, has a sufficiently high degree of internal compressive strain therein to thereby impart a net tensile stress within at least a first portion of the semiconductor word line. A P-N junction diode is also provided on the semiconductor word line. The diode includes a first terminal (e.g., cathode, anode) electrically coupled through the opening in the strain layer to the surface of the semiconductor word line. A data storage element (e.g., MRAM, FRAM, PRAM, RRAM, etc.) may also be provided, which has a current carrying terminal electrically coupled to a second terminal of the p-n junction diode. | 10-20-2011 |
