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Hwan Hee

Hwan Hee Jeong, Nam-Gu KR

Patent application numberDescriptionPublished
20100230686LIGHT EMITTING DEVICE - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a plurality of compound semiconductor layers that includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. An electrode is formed on the compound semiconductor layers. A groove is formed at an upper portion of the compound semiconductor layers. An electrode layer is formed under the compound semiconductor layers.09-16-2010

Hwan Hee Jeong, Seoul KR

Patent application numberDescriptionPublished
20110133234LIGHT EMITTING DEVICE - A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor layer; and a connection member having one end making contact with the first semiconductor layer and the other end making contact with the second semiconductor layer to form a schottky contact with respect to one of the first and second semiconductor layers.06-09-2011
20110133242LIGHT EMITTING APPARATUS - A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.06-09-2011
20110151606LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE - A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.06-23-2011
20110186892LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes the light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.08-04-2011
20110193058LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer.08-11-2011
20110193113LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.08-11-2011
20110193117LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.08-11-2011
20110193121LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.08-11-2011
20110193123LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer; a support member under the adhesive layer; a contact electrode connected to the first conductive type semiconductor layer; a first lead electrode under the support member; a first electrode connecting the contact electrode to the first lead electrode on a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer on a second region of the support member; a second lead electrode connected to the second electrode under the support member; and a first insulating layer between the contact electrode and the light emitting structure layer.08-11-2011
20110198621LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.08-18-2011
20110198991LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND ILLUMINATION SYSTEM - Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.08-18-2011
20110204402Light Emitting Device, Light Emitting Device Package, Method of Manufacturing Light Emitting Device and Illumination System - A light emitting device according to the embodiment includes a substrate; a protective layer on the substrate; a electrode layer on the protective layer; a light emitting structure disposed on the electrode layer to generate light and provided with a first semiconductor layer, an active layer under the first semiconductor layer, and a second conductive semiconductor layer under the active layer; and a first electrode having a first end disposed on a top surface of the light emitting structure and a second end disposed on the protective layer. The protective layer comes into Schottky contact with at least one of the electrode layer and the first electrode.08-25-2011
20110204404LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a conductive support substrate, an ohmic contact layer, a current blocking layer, a light emitting structure layer, an electrode, and a first current guide layer. The ohmic contact layer and the current blocking layer are disposed on the conductive support substrate. The light emitting structure layer is disposed on the ohmic contact layer and the current blocking layer. The electrode is disposed on the light emitting structure layer. At least a part of the electrode is overlapped with the current blocking layer. The first current guide layer is disposed between the current blocking layer and the conductive support substrate. At least a part of the first current guide layer is overlapped with the current blocking layer.08-25-2011
20110210362LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE THEREOF - A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.09-01-2011
20110215352LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE - Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.09-08-2011
20110220937LIGHT EMITTING DEVICE AND LIGTH EMITTING DEVICE PAKAGE - Provided are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a second electrode on the light emitting structure, and a reflective member on at least lateral surface of the second electrode.09-15-2011
20110220938SUBSTRATE FOR FABRICATING LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE - Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser irradiated on a substrate, forming a growth layer on the sacrificial layer, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer, and irradiating the laser onto the sacrificial layer to pass through the substrate, thereby to lift-off the substrate.09-15-2011
20110220942LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.09-15-2011
20110220944LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.09-15-2011
20110227112LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.09-22-2011
20110248237LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.10-13-2011
20110248302LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.10-13-2011
20110260186Light Emitting Device - A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.10-27-2011
20110284864LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING DEVICE - A light emitting device includes a support member, a light emitting structure on the support member, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the second conductive type semiconductor layer and the first conductive type semiconductor layer, a first nitride semiconductor layer disposed on the second conductive type semiconductor layer, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and including an uneven structure, and a first electrode pad disposed on the light emitting structure wherein the second nitride semiconductor layer has an opening, the first electrode pad is in contact with the first nitride semiconductor layer through the opening, and the first nitride semiconductor layer has a work function smaller than that of the second nitride semiconductor layer.11-24-2011
20120001196LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.01-05-2012
20120001218LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.01-05-2012
20120007121LIGHT EMITTING DEVICE - A light emitting device is provided that includes a light emitting structure (including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer), a conductive layer, an insulation layer, and a current blocking layer. The conductive layer may have a first conductive portion that passes through the second conductive type semiconductor layer and the active layer to contact the first conductive type semiconductor layer. The insulation layer may have a first insulation portion that surrounds the first conductive portion of the conductive layer. The current blocking layer may substantially surround the first insulation portion of the insulation layer, the first insulation portion provided between the current blocking layer and the first conductive portion.01-12-2012
20120018757LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM - Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first electrode disposed on the first conductive semiconductor layer, a reflective electrode disposed on the second conductive semiconductor layer, a channel layer disposed on the light emitting structure and surrounds the reflective electrode, and a support substrate connected to the channel layer through an adhesive layer.01-26-2012
20120025249LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided are a light emitting device and a light emitting device package. According to the light emitting device, a light emitting part and an electro-static discharge (ESD) protection part are disposed on a conductive support member. A connection layer electrically connects a first conducitve type semiconductor layer of the light emitting part to a second conductive type semiconductor layer of the ESD protection part. A ptrtection member is disposed on the connection layer and the ESD protection layer.02-02-2012
20120033409LIGHT EMITTING DIODE, AND BACK LIGHT UNIT INCLUDING THE SAME - Embodiments provide a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and a protective layer disposed at a side of the light emitting structure, and a first electrode formed on an outside of the protective layer.02-09-2012
20120037949LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer.02-16-2012
20120057105LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND IMAGE DISPLAY DEVICE INCLUDING THE SAME - A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first electrode arranged on the first conductivity type semiconductor layer; an ohmic layer arranged on a predetermined area of the second conductivity type semiconductor layer; a silicide layer arranged on the ohmic layer, with contacting with the second conductivity type semiconductor layer; and a conductive supporting substrate arranged on the silicide layer.03-08-2012
20120061704LIGHT EMITTING DEVICE AND LIGHTING INSTRUMENT INCLUDING THE SAME - Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.03-15-2012

Hwan Hee Lee, Chungju-Si KR

Patent application numberDescriptionPublished
20090279302LIGHT PIPE AND ILLUMINATING DEVICE HAVING THE SAME - A light pipe and an illuminating device having the light pipe are provided. The light pipe may include an optical film in a rolled shape to have a hollow conduit and a supporter surrounding a surface of the optical film. The supporter may have at least one of a protrusion and an indentation on a surface of the supporter.11-12-2009

Hwan-Hee Cho, Seoul KR

Patent application numberDescriptionPublished
20110266577ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF MANUFACTURING SAME - An organic light emitting device enables improvement on the loss of optical extraction efficiency due to total reflection and optical waveguide effects. The organic light emitting device has a structure wherein a first electrode, an organic substance layer, and a second electrode are sequentially laminated on a substrate, a random nano structure having a fine pattern of a peaks-and-valleys shape is formed between a substrate and a first electrode to extract any light that is wasted due to total reflection and an optical waveguide mode to the outside of the substrate so that an organic light emitting device with improved external quantum efficiency can be realized, and optical extraction patterns and color changes due to visual field angles can also be improved.11-03-2011

Hwan-Hee Kim, Suwon-Si KR

Patent application numberDescriptionPublished
20080240807BELT MEANDER PREVENTING DEVICE, FIXING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME - A fixing device includes a fixing roller, a fixing belt which is made to rotate by a rotation force transferred from the fixing roller, a heat source which is mounted inside the fixing belt, a guide member, which is mounted inside the fixing belt, to guide the rotation of the fixing belt, and a belt meander preventing unit, which is mounted on the guide member, to elastically support both sides of the fixing belt and to prevent the fixing belt from meandering. Therefore, the sides of the fixing belt are elastically supported to gently absorb a reaction force acting on the end portion of the fixing belt, and accordingly it is possible to prevent the fixing belt from being damaged and meandering.10-02-2008
20090016789FUSING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME - A fusing device and an image forming apparatus having the same. The fusing device can include a fusing belt, a heat source disposed in an interior of the fusing belt, a supporting member to support at least a portion of an inner peripheral surface of the fusing belt, a press member mounted while opposing the fusing belt to form a fusing nip, and a nip forming part formed with an opening portion to enable heat emitted from the heat source to be transferred to the fusing belt at a position corresponding to the fusing nip. The nip forming part can have at least one gap maintaining part to prevent change of a gap of the opening portion. The nip forming part is provided at the supporting member or a nip forming member mounted between the heat source and the supporting member. Accordingly, a temperature of the fusing belt can rise quickly by directly heating the fusing belt, and deterioration of fusing performance due to deformation of the nip forming member can be prevented.01-15-2009
20090092423FUSING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME - A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.04-09-2009
20090110451FUSING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME - A fusing device includes a pressure unit, a belt unit to rotate in outer contact with the pressure unit, a nip forming unit to form a nip over a contact portion between the pressure unit and the belt unit, a heating unit to heat the nip forming unit and the belt unit, and a support unit to press and support the nip forming unit constantly and having a plurality of heat transmission portions defined in a parallelogrammic shape of an oblique direction with respect to a traveling direction of the belt unit.04-30-2009
20110091254FUSING DEVICE AND IMAGE FORMING APPARATUS HAVING THE SAME - A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.04-21-2011

Patent applications by Hwan-Hee Kim, Suwon-Si KR

Hwan-Hee Kim, Hwaseong-Si KR

Patent application numberDescriptionPublished
20120082492FUSING UNIT AND IMAGE FORMING APPARATUS EMPLOYING THE SAME - A fusing unit and an image forming apparatus, the fusing unit includes: a fusing frame which is grounded to the image forming apparatus when mounted in the image forming apparatus; a heating member which includes a release layer contacting the print medium and a heat transfer layer provided within the release layer, grounded to the fusing frame, and transfers heat from a heat source provided therein to a print medium passing a predetermined fusing nip; a supporting member which rotatably supports the heating member; a pressure roller, forms the fusing nip between the pressure roller and the heating member, presses the print medium passing the fusing nip and includes a conductive material; and a discharging member includes an end part which contacts the print medium passing the fusing nip, and discharges static electricity from the print medium.04-05-2012