| Patent application number | Description | Published |
|---|
| 20090152553 | THIN-FILM TRANSISTOR, SUBSTRATE AND DISPLAY DEVICE EACH HAVING THE THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR - A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced. | 06-18-2009 |
| 20090167974 | DISPLAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE DISPLAY SUBSTRATE - A display substrate, a display device including the display substrate, and a method of fabricating the display substrate are provided. The display substrate includes a gate electrode; a gate-insulating layer disposed on the gate electrode; an oxide semiconductor pattern disposed on the gate-insulating layer; a source electrode disposed on the oxide semiconductor pattern; and a drain electrode disposed on the oxide semiconductor pattern and separated from the source electrode, wherein at least one portion of at least one of the gate-insulating layer or the oxide semiconductor pattern is plasma-processed. | 07-02-2009 |
| 20090180045 | DISPLAY SUBSTRATE HAVING QUANTUM WELL FOR IMPROVED ELECTRON MOBILITY AND DISPLAY DEVICE INCLUDING THE SAME - Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein. | 07-16-2009 |
| 20090185126 | METAL LINE, METHOD OF FORMING THE SAME, AND A DISPLAY USING THE SAME - Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device. | 07-23-2009 |
| 20090242881 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm | 10-01-2009 |
| 20090251656 | DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A display substrate includes a soda-lime glass substrate, a barrier pattern, and first, second and third conductive patterns. The soda-lime glass substrate has a pixel area. The first conductive pattern includes a gate line formed on the soda-lime glass substrate and from a first conductive layer. The barrier pattern is formed between the first conductive pattern and the soda-lime glass substrate. The second conductive pattern includes a data line crossing the gate line. The data line is formed on the first conductive pattern and from a second conductive layer. The third conductive pattern includes a pixel electrode formed in the pixel area of the soda-lime glass substrate. The pixel electrode is formed on the second conductive pattern and from a third conductive layer. | 10-08-2009 |
| 20100006835 | DISPLAY SUBSTRATE - A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern. | 01-14-2010 |
| 20100123842 | LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREOF - Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor. | 05-20-2010 |
| 20100134731 | LIQUID CRYSTAL DISPLAY - The present application relates to a liquid crystal display including a first substrate, a plurality of gate lines, a plurality of data lines, thin film transistors connected to the gate and data lines, a barrier rib formed on the data lines, and pixel electrodes connected to the thin film transistors. The thin film transistors can be formed using a colored organic film that has an optical density in a range of 1 to 3. Color filters fill the regions surrounded by the barrier rib. Pixel electrodes can be formed on the color filters. A common electrode can be formed on the second substrate facing the first substrate. A liquid crystal layer can be situated between the first and second substrates, which are spaced apart at a predetermined distance by spacers. | 06-03-2010 |
| 20100245698 | LIQUID CRYSTAL DISPLAY DEVICE - The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge. | 09-30-2010 |
