| Patent application number | Description | Published |
|---|
| 20080268645 | METHOD FOR FRONT END OF LINE FABRICATION - In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas. | 10-30-2008 |
| 20090095334 | SHOWERHEAD ASSEMBLY - A method and apparatus for removing native oxides from a substrate surface is provided. In one embodiment, the apparatus for removing native oxides from a substrate surface includes a showerhead assembly. One embodiment of a showerhead assembly includes a hollow cylinder, a disc and an annular mounting flange. The hollow cylinder has a top wall, a bottom wall, an inner diameter wall and an outer diameter wall. The disc has a top surface and a lower surface. The top surface is coupled to the inner diameter wall. The lower surface is coupled to the bottom wall. The disc has a plurality of apertures connecting the lower surface to the top surface. The annular mounting flange extends from the outer diameter wall of the hollow cylinder. The mounting flange has an upper surface and a lower surface. The upper surface is coplanar with the top wall of the hollow cylinder. The lower surface having an elevation above the top surface of the disc. In another embodiment, a resistive heater is embedded in the hollow cylinder proximate the disc. | 04-16-2009 |
| 20090095621 | SUPPORT ASSEMBLY - A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body. | 04-16-2009 |
| 20090111280 | METHOD FOR REMOVING OXIDES - A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate. | 04-30-2009 |
| 20090218324 | DIRECT REAL-TIME MONITORING AND FEEDBACK CONTROL OF RF PLASMA OUTPUT FOR WAFER PROCESSING - A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference. | 09-03-2009 |
