Patent application number | Description | Published |
20120108629 | New use of neferine - The present invention reveals a new use of neferine. Neferine regulates M8 and V1 subtype of transient receptor potential ion channel (TRPM8 and TRPV1), respectively, in mammalians, including humans, and can be used for preparing medicaments for treating disease related to said ion channel (such as hyperalgesia, Parkinson's disease, painful bladder syndrome, chronic obstructive pulmonary disease, and tumor of skin, prostate, mammary gland, lung, colon, etc). The potency of neferine in the present invention is higher than that of hexahydrothymol. | 05-03-2012 |
20130116276 | New use of neferine - The present invention reveals a new use of neferine. Neferine regulates M8 and V1 subtype of transient receptor potential ion channel (TRPM8 and TRPV1), respectively, in mammalians, including humans, and can be used for preparing medicaments for treating disease related to said ion channel (such as hyperalgesia, Parkinson's disease, painful bladder syndrome, chronic obstructive pulmonary disease, and tumor of skin, prostate, mammary gland, lung, colon, etc). The potency of neferine in the present invention is higher than that of hexahydrothymol. | 05-09-2013 |
Patent application number | Description | Published |
20120221534 | DATABASE INDEX MANAGEMENT - Managing database indexes includes creating a main index and creating at least one service index that is configured for recording a change to a node to be updated in the main index. Managing database indexes also includes detecting whether an operation that involves the main index and is performed on the database appears in the database, and maintaining the main index using at least one service index in response to the operation that involves the main index and is performed on the database, appearing in the database. The maintaining is performed based on changes to a node to be updated in the main index that are recorded in the at least one service node. | 08-30-2012 |
20130054522 | DATA SYNCHRONIZATION USING STRING MATCHING - The present invention relates to the technical field of data or file synchronization. In particular, the present invention relates to a method and system for data synchronization using character string matching. Provided are a method, computer program product, and system for data synchronization between a source node and target node. An old copy and a new copy of data to be synchronized is received. A block map is generated according to the difference determined using character string matching between the old copy and the new copy. The block map, which includes the position information of unchanged blocks and the position information and contents of changed blocks, is transmitted to a target node. | 02-28-2013 |
20140214956 | METHOD AND APPARATUS FOR MANAGING SESSIONS OF DIFFERENT WEBSITES - A method, apparatus, and/or computer program product manages sessions of different websites. Respective session identifiers of a plurality of websites are recorded, where each of the respective session identifiers of the plurality of websites identifies a session established in response to a page open operation for a respective website, and where pages of the plurality of websites are integrated into one page on one website. An operation request for a page of a first website of the plurality of websites is received. In response to receiving the operation request, a session synchronization request message that requests that a session of the first website be synchronized with sessions of the plurality of websites is generated and transmitted from the first website to other websites from the plurality of websites. | 07-31-2014 |
Patent application number | Description | Published |
20100145687 | REMOVING NOISE FROM SPEECH - Method for removing noise from a digital speech waveform, including receiving the digital speech waveform having the noise contained therein, segmenting the digital speech waveform into one or more frames, each frame having a clean portion and a noisy portion, extracting a feature component from each frame, creating an nonlinear speech distortion model from the feature components, creating a statistical noise model by making a Piecewise Linear Approximation (PLA) of the nonlinear speech distortion model, determining the clean portion of each frame using the statistical noise model, a log power spectra of each frame, and a model of a digital speech waveform recorded in a noise controlled environment, and constructing a clean digital speech waveform from each clean portion of each frame. | 06-10-2010 |
20100239168 | SEMI-TIED COVARIANCE MODELLING FOR HANDWRITING RECOGNITION - Described is a technology by which handwriting recognition is performed using a semi-tied covariance modeling (STC) that requires far less memory than other models such as MQDF. Offline training, such as via maximum likelihood and/or minimum classification error techniques, provides classification data. The classification data includes semi-tied transforms that are shared by classes, along with a class-dependent diagonal matrix and a mean vector corresponding to each class. The semi-tied transforms and class-dependent diagonal matrices are obtained by processing a precision matrix for each class. In online recognition, received handwritten input (e.g., an East Asian character) is classified into a class, based upon the class-dependent diagonal matrices and the semi-tied transforms, by a STC recognizer that outputs similarity scores for candidates and a decision rule that selects the most likely class. | 09-23-2010 |
20100246941 | PRECISION CONSTRAINED GAUSSIAN MODEL FOR HANDWRITING RECOGNITION - Described is a technology by which handwriting recognition is performed using a precision constrained Gaussian model (PCGM) that requires far less memory than other models such as MQDF. Offline training, such as via maximum likelihood and/or minimum classification error techniques, provides classification data. The classification data includes basis matrices that are shared by classes, along with weighting coefficients and a mean vector corresponding to each class. The base matrices and weights are obtained by expanding a precision matrix for each class. In online recognition, received handwritten input (e.g., an East Asian character) is classified into a class, based upon the per-class mean vector and weighting coefficients, and the basis matrices, by a PCGM recognizer that outputs similarity scores for candidates and a decision rule that selects the most likely class. | 09-30-2010 |
20100262423 | FEATURE COMPENSATION APPROACH TO ROBUST SPEECH RECOGNITION - Described is a technology by which a feature compensation approach to speech recognition uses a high-order vector Taylor series (HOVTS) approximation of a model of distortions to improve recognition accuracy. Speech recognizer models trained with clean speech degrade when later dealing with speech that is corrupted by additive noises and convolutional distortions. The approach attempts to remove any such noise/distortions from the input speech. To use the HOVTS approximation, a Gaussian mixture model is trained and used to convert cepstral domain feature vectors to log spectrum components. HOVTS computes statistics for the components, which are transformed back to the cepstral domain. A noise/distortion estimate is obtained, and used to provide a clean speech estimate to the recognizer. | 10-14-2010 |
20110157012 | RECOGNIZING INTERACTIVE MEDIA INPUT - Techniques and systems for inputting data to interactive media devices are disclosed herein. In some aspects, a sensing device senses an object as it moves in a trajectory indicative of a desired input to an interactive media device. Recognition software may be used to translate the trajectory into various suggested characters or navigational commands. The suggested characters may be ranked based on a likelihood of being an intended input. The suggested characters may be displayed on a user interface at least in part based on the rank and made available for selection as the intended input. | 06-30-2011 |
20110257976 | Robust Speech Recognition - Speech recognition includes structured modeling, irrelevant variability normalization and unsupervised online adaptation of speech recognition parameters. | 10-20-2011 |
20110262033 | COMPACT HANDWRITING RECOGNITION - One or more techniques and/or systems are disclosed for constructing a compact handwriting character classifier. A precision constrained Gaussian model (PCGM) based handwriting classifier is trained by estimating parameters for the PCGM under minimum classification error (MCE) criterion, such as by using a computer-based processor. The estimated parameters of the trained PCGM classifier are compressed using split vector quantization (VQ) (e.g., and in some embodiments, scalar quantization) to compact the handwriting recognizer in computer-based memory. | 10-27-2011 |
20110268351 | AFFINE DISTORTION COMPENSATION - One or more techniques and/or systems are disclosed for compensating for affine distortions in handwriting recognition. Orientation estimation is performed on a handwriting sample to generate a set of likely characters for the sample. An estimated affine transform is determined for the sample by applying hidden Markov model (HMM) based minimax testing to the sample using the set of likely characters. The estimated affine transform is applied to the sample to compensate for the affine distortions of the sample, yielding an affine distortion compensated sample. | 11-03-2011 |
20110280484 | FEATURE DESIGN FOR HMM-BASED HANDWRITING RECOGNITION - The disclosed architecture is a new feature extraction approach to handwriting recognition. Given an handwriting sample (e.g., from an online source), a sequence of time-ordered dominant points are extracted, which include stroke-endings, points corresponding to local extrema of curvature, and points with a large distance to the chords formed by pairs of previously identified neighboring dominant points. At each dominant point, a multi-dimensional feature vector is extracted, which includes a combination of coordinate features, delta features, and double-delta features. | 11-17-2011 |
20120280974 | PHOTO-REALISTIC SYNTHESIS OF THREE DIMENSIONAL ANIMATION WITH FACIAL FEATURES SYNCHRONIZED WITH SPEECH - Dynamic texture mapping is used to create a photorealistic three dimensional animation of an individual with facial features synchronized with desired speech. Audiovisual data of an individual reading a known script is obtained and stored in an audio library and an image library. The audiovisual data is processed to extract feature vectors used to train a statistical model. An input audio feature vector corresponding to desired speech with which the animation will be synchronized is provided. The statistical model is used to generate a trajectory of visual feature vectors that corresponds to the input audio feature vector. These visual feature vectors are used to identify a matching image sequence from the image library. The resulting sequence of images, concatenated from the image library, provides a photorealistic image sequence with facial features, such as lip movements, synchronized with the desired speech. This image sequence is applied to the three-dimensional model. | 11-08-2012 |
20130103383 | TRANSLATING LANGUAGE CHARACTERS IN MEDIA CONTENT - Some implementations disclosed herein provide techniques and arrangements to enable translating language characters in media content. For example, some implementations receive a user selection of a first portion of media content. Some implementations disclosed herein may, based on the first portion, identify a second portion of the media content. The second portion of the media content may include one or more first characters of a first language. Some implementations disclosed herein may create an image that includes the second portion of the media content and may send the image to a server. Some implementations disclosed herein may receive one or more second characters of a second language corresponding to a translation of the one or more first characters of the first language from the server. | 04-25-2013 |
20130185070 | NORMALIZATION BASED DISCRIMINATIVE TRAINING FOR CONTINUOUS SPEECH RECOGNITION - A speech recognition system trains a plurality of feature transforms and a plurality of acoustic models using an irrelevant variability normalization based discriminative training. The speech recognition system employs the trained feature transforms to absorb or ignore variability within an unknown speech that is irrelevant to phonetic classification. The speech recognition system may then recognize the unknown speech using the trained recognition models. The speech recognition system may further perform an unsupervised adaptation to adapt the feature transforms for the unknown speech and thus increase the accuracy of recognizing the unknown speech. | 07-18-2013 |
20130251249 | ROTATION-FREE RECOGNITION OF HANDWRITTEN CHARACTERS - A character recognition system receives an unknown character and recognizes the character based on a pre-trained recognition model. Prior to recognizing the character, the character recognition system may pre-process the character to rotate the character to a normalized orientation. By rotating the character to a normalized orientation in both training and recognition stages, the character recognition system releases the pre-trained recognition model from considering character prototypes in different orientations and thereby speeds up recognition of the unknown character. In one example, the character recognition system rotates the character to the normalized orientation by aligning a line between a sum of coordinates of starting points and a sum of coordinates of ending points of each stroke of the character with a normalized direction. | 09-26-2013 |
20140257814 | Posterior-Based Feature with Partial Distance Elimination for Speech Recognition - A high-dimensional posterior-based feature with partial distance elimination may be utilized for speech recognition. The log likelihood values of a large number of Gaussians are needed to generate the high-dimensional posterior feature. Gaussians with very small log likelihoods are associated with zero posterior values. Log likelihoods for Gaussians for a speech frame may be evaluated with a partial distance elimination method. If the partial distance of a Gaussian is already too small, the Gaussian will have a zero posterior value. The partial distance may be calculated by sequentially adding individual dimensions in a group of dimensions. The partial distance elimination occurs when less than all of the dimensions in the group are sequentially added. | 09-11-2014 |
20150095855 | ACTIONABLE CONTENT DISPLAYED ON A TOUCH SCREEN - Some implementations may present a media file that includes video on a touchscreen display. A user gesture performed on the touchscreen display may be detected. The user gesture may include one of a tap gesture, a swipe gesture, or a tap and hold and drag while holding gesture. Text selected by the user gesture may be determined. One or more follow-up actions may be performed automatically based at least partly on the text selected by the user gesture. | 04-02-2015 |
20150199960 | I-Vector Based Clustering Training Data in Speech Recognition - Methods and systems for i-vector based clustering training data in speech recognition are described. An i-vector may be extracted from a speech segment of a speech training data to represent acoustic information. The extracted i-vectors from the speech training data may be clustered into multiple clusters using a hierarchical divisive clustering algorithm. Using a cluster of the multiple clusters, an acoustic model may be trained. This trained acoustic model may be used in speech recognition. | 07-16-2015 |
Patent application number | Description | Published |
20080241042 | Method for making metal titanate - A method for making a mono-dispersed metal titanate includes the steps of: (a) mixing titanate ester, metal salt, and rare earth metal salt in a molar ratio of 1:1:x in a reaction medium comprised of ethanol and water to form a solution, wherein x is in the range from 0 to 0.1; (b) heating the solution, under an alkaline condition to form a white sediment; (c) filtering out liquid part of the solution to obtain the white sediment, (d) washing the white sediment, and (e) drying the white sediment to obtain mono-dispersed metal titanate. | 10-02-2008 |
20080247932 | Method for making colloidal nanocrystals - A method for making colloidal nanocrystals includes the following steps: dissolving a nanocrystal powder in an organic solvent, and achieving a solution A of a concentration of 1-30 mg/ml; dissolving a surfactant in water, and achieving a solution B of a concentration of 0.002-0.05 mmol/ml; mixing the solution A and the solution B in a volume ratio of 1: (5-30), and achieving a mixture; stirring and emulsifying the mixture, until an emulsion C is achieved; removing the organic solvent from the emulsion C, and achieving a deposit; then washing the deposit with deionized water, and achieving colloidal nanocrystals. The present method for making colloidal nanocrystals is economical and timesaving, and has a low toxicity associated therewith. Thus, the method is suitable for industrial mass production. The colloidal nanocrystals made by the present method have a readily controllable size, a narrow size distribution, and good configuration. | 10-09-2008 |
20100278721 | Method for making mesoporous material - A method for making the mesoporous material includes the following steps: dissolving a nanocrystal powder in an organic solvent, and achieving a solution A with concentration of 1-30 mg/ml; dissolving a surfactant in water, and achieving a solution B with an approximate concentration of 0.002-0.05 mol/ml; mixing the solution A and the solution B in a volume ratio of 1: (5-30), and achieving a mixture; stirring and emulsifying the mixture, until an emulsion C is achieved; removing the organic solvent from the emulsion C, and achieving a deposit; washing the deposit with deionized water, and achieving a colloid; and drying and calcining the colloid, and eventually achieving a mesoporous material. The mesoporous material has a large specific surface area, a high porosity, and a narrow diameter distribution. | 11-04-2010 |
Patent application number | Description | Published |
20120140543 | One Time Programming Memory and Method of Storage and Manufacture of the Same - The present invention relates to a one time programming memory and method of storage and manufacture of the same. It belongs to microelectronic memory technology and manufacture field. The one time programming memory comprises a diode ( | 06-07-2012 |
20120161094 | 3D SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - The present application discloses a 3D semiconductor memory device having 1T1R memory configuration based on a vertical-type gate-around transistor, and a manufacturing method thereof. A on/off current ratio can be well controlled by changing a width and a length of a channel of the gate-around transistor, so as to facilitate multi-state operation of the 1T1R memory cell. Moreover, the vertical transistor has a smaller layout size than a horizontal transistor, so as to reduce the layout size effectively. Thus, the 3D semiconductor memory device can be integrated into an array with a high density. | 06-28-2012 |
20120235112 | RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING THE SAME - The present disclosure relates to the microelectronics field, and particularly, to a resistive switching memory and a method for manufacturing the same. The memory may comprise a lower electrode, a resistive switching layer, and an upper electrode. The resistive switching layer may have carbon nano-tubes embedded therein. Growth of a conductive filament in the resistive switching layer can be facilitated and controlled under an externally applied bias by a local electric field enhancement effect of the carbon nano-tubes, so as to improve performances and stability of the device. The resistive switching memory according to the present disclosure can have a good resistive switching capability. Further, the operating voltage and the resistance value of the device can be well controlled by controlling the length and position of the carbon nano-tubes in the resistive switching layer. | 09-20-2012 |
20120248503 | SEMICONDUCTOR MEMORY CELL, DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory cell, a semiconductor memory device, and a method for manufacturing the same are disclosed. The semiconductor memory cell may comprise: a substrate; a channel region on the substrate; a gate region above the channel region; a source region and a drain region on the substrate and at opposite sides of the channel region; and a buried layer, which is disposed between the substrate and the channel region and comprises a material having a forbidden band narrower than that of a material for the channel region material. The buried layer material has a forbidden band narrower than that of the channel region material, so that a hole barrier is formed in the buried layer. Due to the barrier, it is difficult for holes stored in the buried layer to leak out, resulting in an improved information holding duration of the memory cell utilizing the floating-body effect. | 10-04-2012 |
20120275220 | THREE-DIMENSIONAL MULTI-BIT NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURING THE SAME - The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured. | 11-01-2012 |
20120281452 | RESISTIVE RANDOM MEMORY CELL AND MEMORY - The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell. The present disclosure uses the asymmetric tunneling barrier layer for rectifying, so as to enable selection of the resistive random memory cell. The method for manufacturing the asymmetric tunneling barrier layer does not involve doping or high-temperature annealing processes, and the thickness of the asymmetric tunneling barrier layer is relatively small, which helps 3D high-density integration of the resistive random memory. | 11-08-2012 |
20130203227 | METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - The present disclosure provides a method for manufacturing a three-dimensional semiconductor memory device. In the method, a storage array is divided into a plurality of storage sub-arrays. As a result, a respective via of each storage sub-array can be etched respectively, which is different from the prior art, where a via for a bottom electrode of a plurality of layers of resistive cells is etched at one time. The vias are filled with metal so that storage sub-arrays are connected with each other. The method for manufacturing the three-dimensional semiconductor memory device according to the present disclosure can substantially reduce process complexity and difficulty of etching process in high-density integration, and also improve a number of layers of the resistive cells integrated in the storage array. | 08-08-2013 |
20150179661 | VERTICAL CHANNEL-TYPE 3D SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical channel-type 3D semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the device includes a multi-layer film formed by depositing alternating layers of insulation and an electrode material on a substrate. The device also includes through-holes formed by etching the film to the substrate. The device also includes gate stacks formed by depositing barrier storage and a tunnel layers in sequence on inner walls of the through-holes. The device also includes hollow channels formed by depositing a channel material on the tunnel layer. The device also includes drains for bit-line connection in top portions of the hollow channels. The device also includes sources formed in contact regions between through-holes and the substrate in bottom portions of the hollow channels. | 06-25-2015 |