Hunsche
Berno Hunsche, Aachen DE
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20110073898 | LED MODULE - The present invention relates to a LED module which converts pump light from a LED chip ( | 03-31-2011 |
Berno Hunsche, Langerwehe DE
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20110233049 | SPUTTERING SYSTEM - The invention relates to a device ( | 09-29-2011 |
20130193838 | LED MODULE - The present invention relates to a LED module which converts pump light from a LED chip ( | 08-01-2013 |
20130200416 | LED MODULE - The present invention relates to a LED module which converts pump light from a LED chip ( | 08-08-2013 |
Slefan Hunsche, Santa Clara, CA US
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20100141925 | SCANNER MODEL REPRESENTATION WITH TRANSMISSION CROSS COEFFICIENTS - The present invention relates to a method for simulating aspects of a lithographic process. According to certain aspects, the present invention uses transmission cross coefficients to represent the scanner data and models. According to other aspects, the present invention enables sensitive data regarding various scanner subsystems to be hidden from third party view, while providing data and models useful for accurate lithographic simulation. | 06-10-2010 |
Stefan Hunsche, Sunnyvale, CA US
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20100180251 | METHOD FOR PROCESS WINDOW OPTIMIZED OPTICAL PROXIMITY CORRECTION - One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections. | 07-15-2010 |
20130219348 | METHOD FOR PROCESS WINDOW OPTIMIZED OPTICAL PROXIMITY CORRECTION - One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections. | 08-22-2013 |
Stefan Hunsche, Santa Clara, CA US
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20150227654 | PROCESS WINDOW OPTIMIZER - Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process. | 08-13-2015 |