| Patent application number | Description | Published |
|---|
| 20090017626 | SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME - A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH | 01-15-2009 |
| 20090093107 | SEMICONDUCTOR SUBSTRATE CLEANING METHODS, AND METHODS OF MANUFACTURE USING SAME - In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water. | 04-09-2009 |
| 20090117499 | Cleaning solution for immersion photolithography system and immersion photolithograph process using the cleaning solution - A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system. | 05-07-2009 |
| 20090120459 | APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES - An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path. | 05-14-2009 |
| 20090130842 | Method of forming contact hole and method of manufacturing semiconductor memory device using the same - A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices. | 05-21-2009 |
| 20100158778 | APPARATUS FOR PURIFYING AIR AND PURIFYING METHOD THEREOF - An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO | 06-24-2010 |
| 20120006351 | Methods Of Cleaning And Plasma Processing Apparatus For Manufacturing Semiconductors - A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC. | 01-12-2012 |
| 20120009792 | SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME - A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH | 01-12-2012 |
